Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes, plural transfer MOSFETs arranged corresponding to the plural photodiodes, respectively, and a common MOSFET which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes, plural transfer MOSFETs arranged corresponding to the plural photodiodes, respectively, and a common MOSFET which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

Abstract: A temperature control device for controlling a temperature of a temperature adjustment target part is provided.

Abstract: A status monitoring apparatus includes information obtaining means to obtain detected information items that are continuously detected; image data generating means to partition the detected information items by frames at predetermined time intervals, and configured to generate, for each frame, two-dimensional image data representing a distribution of detected information items in the frame, with an axis of abscissa being a time axis and an axis of ordinate being an axis showing a value/amount of the detected information items; and status detecting means to perform a machine learning based on the two-dimensional image data generated by the image data generating means to generate a correct label for judging whether the two-dimensional image data show at least a warning sign of failure, and to judge that at least a warning sign of failure has occurred in the detected information items, when the two-dimensional image data corresponding to the correct label are generated.

Abstract: A temperature control device for controlling a temperature of a temperature adjustment target part is provided.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes with plural transfer MOSFETs arranged respectively corresponding to the plural photodiodes, and a common MOSFET that amplifies and outputs signals read from the plural photodiodes. The unit cell includes reset and selecting MOSFETs. Within the unit cell, each pair of photodiode and corresponding transfer MOSFET has translational symmetry with respect to one another.

Abstract: In the present chiller apparatus, a refrigerant flow path is branchably attached to a lower electrode serving as a large sample table, which copes with a case where the surface area of a sample is large in a configuration in which a plasma treatment device connected to a refrigerant cycle equipped with a heating device is applied. A control device transmits a heating adjustment control signal generated based on a result of a PID arithmetic operation including proportion, integration, and differentiation on a lower electrode refrigerant pipe refrigerant detection temperature detected from a temperature sensor provided in the vicinity of a refrigerant flow path of a heat insulating portion relative to the lower electrode of a lower electrode refrigerant pipe connected to be linked to the refrigerant cycle to a heating device and performs feedback control such that the lower electrode refrigerant pipe refrigerant detection temperature becomes a setting temperature.

Abstract: A status monitoring apparatus includes information obtaining means to obtain detected information items that are continuously detected; image data generating means to partition the detected information items by frames at predetermined time intervals, and configured to generate, for each frame, two-dimensional image data representing a distribution of detected information items in the frame, with an axis of abscissa being a time axis and an axis of ordinate being an axis showing a value/amount of the detected information items; and status detecting means to perform a machine learning based on the two-dimensional image data generated by the image data generating means to generate a correct label for judging whether the two-dimensional image data show at least a warning sign of failure, and to judge that at least a warning sign of failure has occurred in the detected information items, when the two-dimensional image data corresponding to the correct label are generated.

Abstract: In the present chiller apparatus, a refrigerant flow path is branchably attached to a lower electrode serving as a large sample table, which copes with a case where the surface area of a sample is large in a configuration in which a plasma treatment device connected to a refrigerant cycle equipped with a heating device is applied. A control device transmits a heating adjustment control signal generated based on a result of a PID arithmetic operation including proportion, integration, and differentiation on a lower electrode refrigerant pipe refrigerant detection temperature detected from a temperature sensor provided in the vicinity of a refrigerant flow path of a heat insulating portion relative to the lower electrode of a lower electrode refrigerant pipe connected to be linked to the refrigerant cycle to a heating device and performs feedback control such that the lower electrode refrigerant pipe refrigerant detection temperature becomes a setting temperature.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes with plural transfer MOSFETs arranged respectively corresponding to the plural photodiodes, and a common MOSFET that amplifies and outputs signals read from the plural photodiodes. The unit cell includes reset and selecting MOSFETs. Within the unit cell, each pair of photodiode and corresponding transfer MOSFET has translational symmetry with respect to one another.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes with plural transfer MOSFETs arranged respectively corresponding to the plural photodiodes, and a common MOSFET that amplifies and outputs signals read from the plural photodiodes. The unit cell includes reset and selecting MOSFETs. Within the unit cell, each pair of photodiode and corresponding transfer MOSFET has translational symmetry with respect to one another.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes with plural transfer MOSFETs arranged respectively corresponding to the plural photodiodes, and a common MOSFET that amplifies and outputs signals read from the plural photodiodes. The unit cell includes reset and selecting MOSFETs. Within the unit cell, each pair of photodiode and corresponding transfer MOSFET has translational symmetry with respect to one another.

Abstract: An image pickup device includes pixels, each including a photoelectric conversion unit and a transfer unit. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. A second-conductivity-type third semiconductor region is formed on at least a part of a gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel. A first-conductivity-type fourth semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region. A first-conductivity-type fifth semiconductor region having an impurity concentration higher than the first semiconductor region is arranged between the photoelectric conversion unit and the third semiconductor region and is arranged deeper than fourth semiconductor region.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

Abstract: Unit cells each having a plurality of photodiodes 101a and 101b, a plurality of transfer MOSFETs 102a and 102b provided in correspondence to the plurality of photodiodes, respectively and a common amplifying MOSFET 104 for amplifying and outputting signals read out from the plurality of diodes are arranged two-dimensionally, and, plural photodiodes are disposed around the photodiode 101b and trapping regions 130, 134, 135 and 132 are for trapping excessive carriers from the photodiode 101b are provided between the photodiode 101b and the plural photodiodes, respectively.

Abstract: An image pickup device includes pixels, each including a photoelectric conversion unit and a transfer unit. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. A second-conductivity-type third semiconductor region is formed on at least a part of a gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel. A first-conductivity-type fourth semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region. A first-conductivity-type fifth semiconductor region having an impurity concentration higher than the first semiconductor region is arranged between the photoelectric conversion unit and the third semiconductor region and is arranged deeper than fourth semiconductor region.

Abstract: A solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements, and that provides a high sensitivity and a low dark current even in a high-speed readout operation, includes a well formed on a wafer, and semiconductor layers formed in the well to constitute photodiodes. A well contact is formed between the semiconductor layers. Element isolation regions are provided between the well contact and the semiconductor layers, and channel stop layers are provided under the element isolation regions. A conductive layer is provided on the element isolation region, and a side wall is provided on a side face of the conductive layer. A distance a between an end of the element isolation region and the conductive layer, a width b of the side wall and a device isolation width c satisfy a relation c>a?b.

Abstract: The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge from the photoelectric conversion unit to the amplifying unit, in which the photoelectric conversion unit is formed of a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region and a second-conductivity-type third semiconductor region is formed on at least a part of the gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel, a first-conductivity-type fourth semiconductor region having an impurity concentration higher than that of the first semiconductor region is formed between the photoelectric conversion unit and the third semicon