Abstract: A package structure for a semiconductor device comprises a substrate having a main surface and a back surface, a semiconductor chip formed on the main surface of the substrate, a package covering the semiconductor chip, radiation protrude electrodes and connection protrude electrodes. The radiation protrude electrodes are formed on the back surface of the substrate in a chip area where said semiconductor chip is located. Each of the radiation protrude electrodes are formed with a first pitch so that the radiation protrude electrodes make one body joining layer when the package structure is subjected to a heat treatment. The connection protrude electrodes are formed on the back surface of the substrate in a peripheral area of the chip area. Each of the connection protrude electrodes formed with a second pitch which is larger than the first pitch so that the connection protrude electrodes stay individual when the package structure is subjected to a heat treatment.

Abstract: A semiconductor device including a substrate having a main surface including a first area, a second area surrounding the first area, and a third area surrounding the second area; a first insulating protective film that is provided in the first area and formed in a shape having no angles; a second insulating protective film provided in the third area; a semiconductor chip that is provided on the first insulating protective film and has a bottom surface facing to the first insulating protective film; and a sealing resin covering the semiconductor chip, wherein the bottom surface of the semiconductor chip covers the first area.

Abstract: A semiconductor device including a substrate having a main surface including a first area, a second area surrounding the first area, and a third area surrounding the second area; a first insulating protective film that is provided in the first area and formed in a shape having no angles; a second insulating protective film provided in the third area; a semiconductor chip that is provided on the first insulating protective film and has a bottom surface facing to the first insulating protective film; and a sealing resin covering the semiconductor chip, wherein the bottom surface of the semiconductor chip covers the first area.

Abstract: A semiconductor device including a substrate having a main surface including a first area, a second area surrounding the first area, and a third area surrounding the second area; a first insulating protective film that is provided in the first area and formed in a shape having no angles; a second insulating protective film provided in the third area; a semiconductor chip that is provided on the first insulating protective film and has a bottom surface facing to the first insulating protective film; and a sealing resin covering the semiconductor chip, wherein the bottom surface of the semiconductor chip covers the first area.

Abstract: A package structure for a semiconductor device comprises a substrate having a main surface and a back surface, a semiconductor chip formed on the main surface of the substrate, a package covering the semiconductor chip, radiation protrude electrodes and connection protrude electrodes. The radiation protrude electrodes are formed on the back surface of the substrate in a chip area where said semiconductor chip is located. Each of the radiation protrude electrodes are formed with a first pitch so that the radiation protrude electrodes make one body joining layer when the package structure is subjected to a heat treatment. The connection protrude electrodes are formed on the back surface of the substrate in a peripheral area of the chip area. Each of the connection protrude electrodes formed with a second pitch which is larger than the first pitch so that the connection protrude electrodes stay individual when the package structure is subjected to a heat treatment.

Abstract: A package structure for a semiconductor device comprises a substrate having a main surface and a back surface, a semiconductor chip formed on the main surface of the substrate, a package covering the semiconductor chip, radiation protrude electrodes and connection protrude electrodes. The radiation protrude electrodes are formed on the back surface of the substrate in a chip area where said semiconductor chip is located. Each of the radiation protrude electrodes are formed with a first pitch so that the radiation protrude electrodes make one body joining layer when the package structure is subjected to a heat treatment. The connection protrude electrodes are formed on the back surface of the substrate in a peripheral area of the chip area. Each of the connection protrude electrodes formed with a second pitch which is larger than the first pitch so that the connection protrude electrodes stay individual when the package structure is subjected to a heat treatment.

Abstract: A resin sealed type semiconductor device; is provided with a semiconductor chip which has a pad formed on a main surface thereof, an insulating film which is formed on a part of the pad and on the main surface of the semiconductor chip, an interconnection which is formed on a part of the insulating film and which is electrically connected to the pad, a sealing resin which seals the interconnection and the insulating film, a post formed on the interconnection which has a surface exposed to outside of the sealing resin and which is electrically connected to the interconnection, a bump electrode which is mounted on the exposed surface of the post and a radiation post which is formed on the insulating film and which has a surface exposed to outside of the sealing resin.

Abstract: A semiconductor device including a substrate having a main surface including a first area, a second area surrounding the first area, and a third area surrounding the second area; a first insulating protective film that is provided in the first area and formed in a shape having no angles; a second insulating protective film provided in the third area; a semiconductor chip that is provided on the first insulating protective film and has a bottom surface facing to the first insulating protective film; and a sealing resin covering the semiconductor chip, wherein the bottom surface of the semiconductor chip covers the first area.

Abstract: A semiconductor device manufacturing method according to the present invention comprising: arranging a dam made of a highly heat-shrinkable material on a surface of a circuit substrate, wherein the dam defines a region including a semiconductor element, a conductor, and part of a conductive pattern connected to one end of the conductor; injecting a sealer into a region defined by the dam and using the sealer to seal the semiconductor element, the conductor, and part of the conductive pattern connecting with one end of the conductor; and cooling the dam to remove it. Namely, the method can decrease costs, shorten the manufacturing time, and provide miniaturized COB-mounted semiconductor devices.

Abstract: A resin sealed type semiconductor device, is provided with a semiconductor chip which has a pad formed on a main surface thereof, an insulating film which is formed on a part of the pad and on the main surface of the semiconductor chip, an interconnection which is formed on a part of the insulating film and which is electrically connected to the pad, a sealing resin which seals the interconnection and the insulating film, a post formed on the interconnection which has a surface exposed to outside of the sealing resin which is electrically connected to the interconnection, a bump electrode which is mounted on the exposed surface of the post and a radiation post which is formed on the insulating film and which has a surface exposed to outside of the sealing resin.

Abstract: A package structure for a semiconductor device comprises a substrate having a main surface and a back surface, a semiconductor chip formed on the main surface of the substrate, a package covering the semiconductor chip, radiation protrude electrodes and connection protrude electrodes. The radiation protrude electrodes are formed on the back surface of the substrate in a chip area where said semiconductor chip is located. Each of the radiation protrude electrodes are formed with a first pitch so that the radiation protrude electrodes make one body joining layer when the package structure is subjected to a heat treatment. The connection protrude electrodes are formed on the back surface of the substrate in a peripheral area of the chip area. Each of the connection protrude electrodes formed with a second pitch which is larger than the first pitch so that the connection protrude electrodes stay individual when the package structure is subjected to a heat treatment.

Abstract: A resin sealed type semiconductor device is provided with a semiconductor chip which has a pad formed on a main surface thereof, an insulating film which is formed on a part of the pad and on the main surface of the semiconductor chip, an interconnection which is formed on a part of the insulating film and which is electrically connected to the pad, a sealing resin which seals the interconnection and the insulating film, a post formed on the interconnection which has a surface exposed to outside of the sealing resin and which is electrically connected to the interconnection, a bump electrode which is mounted on the exposed surface of the post and a radiation post which is formed on the insulating film and which has a surface exposed to outside of the sealing resin.

Abstract: A semiconductor device manufacturing method according to the present invention comprising: arranging a dam made of a highly heat-shrinkable material on a surface of a circuit substrate, wherein the dam defines a region including a semiconductor element, a conductor, and part of a conductive pattern connected to one end of the conductor; injecting a sealer into a region defined by the dam and using the sealer to seal the semiconductor element, the conductor, and part of the conductive pattern connecting with one end of the conductor; and cooling the dam to remove it. Namely, the method can decrease costs, shorten the manufacturing time, and provide miniaturized COB-mounted semiconductor devices.

Abstract: A resin sealed type semiconductor device, is provided with a semiconductor chip which has a pad formed on a main surface thereof, an insulating film which is formed on a part of the pad and on the main surface of the semiconductor chip, an interconnection which is formed on a part of the insulating film and which is electrically connected to the pad, a sealing resin which seals the interconnection and the insulating film, a post formed on the interconnection which has a surface exposed to outside of the sealing resin which is electrically connected to the interconnection, a bump electrode which is mounted on the exposed surface of the post and a radiation post which is formed on the insulating film and which has a surface exposed to outside of the sealing resin.