Abstract: A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method comprises performing main etching on the film. The main etching is plasma etching of the film and exposes at least a part of the underlying region. The method further comprises forming a protective layer on at least a side wall surface of the mask after the performing of the main etching. A material of the protective layer is different from a material of the film. The method further comprises performing over-etching on the film after the forming of the protective layer. The over-etching is plasma etching of the film.

Abstract: A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method includes performing main etching on the film. The main etching is plasma etching of the film and exposes at least a part of the underlying region. The method further includes forming a protective layer on at least a side wall surface of the mask after the performing of the main etching. A material of the protective layer is different from a material of the film. The method further includes performing over-etching on the film after the forming of the protective layer. The over-etching is plasma etching of the film.

Abstract: A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method includes performing main etching on the film. The main etching is plasma etching of the film and exposes at least a part of the underlying region. The method further includes forming a protective layer on at least a side wall surface of the mask after the performing of the main etching. A material of the protective layer is different from a material of the film. The method further includes performing over-etching on the film after the forming of the protective layer. The over-etching is plasma etching of the film.

Abstract: Hot-melt-adhesive conjugate fibers consisting of a fiber-forming component and an adhesive component are provided, with at least one of the fiber-forming component and the adhesive component being a low-melting, modified polyester resin obtained by subjecting to polycondensation, a diol component consisting of 3 to 40 molar % of a 2,2-dialkyl-substituted-1,3-propanediol and 60 to 97 molar % of ethylene glycol and/or 1,4-butanediol, and an aromatic dicarboxylic acid, said low-melting, modified polyester resin having a melting point range between the melting point of polyethylene and a temperature at least 20.degree. C. lower than the melting point of highly crystalline polyethylene terephthalate.