Patents by Inventor Seiji Ihumiya

Seiji Ihumiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE HAVING A GATE INSULATING FILM STRUCTURE INCLUDING AN INSULATING FILM CONTAINING METAL, SILICON AND OXYGEN AND MANUFACTURING METHOD THEREOF
    Publication number: 20090233451
    Abstract: Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
    Type: Application
    Filed: May 26, 2009
    Publication date: September 17, 2009
    Inventors: Yoshitaka Tsunashima, Seiji Ihumiya, Yasumasa Suizu, Yoshio Ozawa, Kiyotaka Miyano, Masayuki Tanaka
  • Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof
    Patent number: 7544593
    Abstract: Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
    Type: Grant
    Filed: December 7, 2007
    Date of Patent: June 9, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshitaka Tsunashima, Seiji Ihumiya, Yasumasa Suizu, Yoshio Ozawa, Kiyotaka Miyano, Masayuki Tanaka
  • Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof
    Publication number: 20080102616
    Abstract: Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
    Type: Application
    Filed: December 7, 2007
    Publication date: May 1, 2008
    Inventors: Yoshitaka Tsunashima, Seiji Ihumiya, Yasumasa Suizu, Yoshio Ozawa, Kiyotaka Miyano, Masayuki Tanaka
  • Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof
    Publication number: 20050006675
    Abstract: Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
    Type: Application
    Filed: August 11, 2004
    Publication date: January 13, 2005
    Inventors: Yoshitaka Tsunashima, Seiji Ihumiya, Yasumasa Suizu, Yoshio Ozawa, Kiyotaka Miyano, Masayuki Tanaka