Abstract: A terahertz-wave detector having a thermal separation structure in which a temperature detection unit 14 including a bolometer thin film 7 connected to electrode wiring 9 is supported so as to be lifted above a substrate 2 by a support part 13 including the electrode wiring 9 connected to a reading circuit 2a formed on the substrate 2, wherein the terahertz-wave detector is provided with a reflective film 3 that is formed on the substrate 2 and reflects terahertz waves and an absorption film 11 that is formed on the temperature detection unit 14 and absorbs terahertz waves and the reflective film 3 is integrally formed with the reflective film of an adjacent terahertz-wave detector.

Abstract: According to the present invention, the gas adsorption capability of a getter can be maintained while the characteristics of an infrared ray sensor element are prevented from being deteriorated. An infrared ray sensor package has an infrared ray sensor element, a base substrate, a housing, an infrared ray transmission window, and a getter. The infrared ray sensor element is vacuum-sealed in a space surrounded by the base substrate, the housing, and the infrared ray transmission window. A spacer is disposed between the infrared ray sensor element and the base substrate to form a gap between the infrared ray sensor element and the base substrate. The getter is arranged in the gap formed between the infrared ray sensor element and the base substrate. A heat shielding member is disposed between the infrared ray sensor element and the getter. The heat shielding member is a heater for heating the infrared ray sensor element or an element formed of alloy containing Ni or heat-resistant glass.

Abstract: A vacuum sealed package includes a package main body portion in which a first main body portion and a second main body portion are bonded via a hollow portion, and a getter material and an electronic device that are provided within the hollow portion, and in the state of the hollow portion being evacuated via a through-hole that brings the inside and the outside of the hollow portion into communication, the package main body portion is sealed with a sealing member, the getter material and the electronic device are connected to a first conductor pad and a second conductor pad, the first conductor pad is connected with a third conductor pad via a thermally conductive material, and the second conductor pad is electrically connected with a fourth conductor pad on a wiring substrate.

Abstract: A bolometer type Terahertz wave detector comprises: a temperature detecting portion having a thin bolometer film formed on a substrate, a reflective film that reflects Terahertz waves formed on the substrate at a position facing the temperature detecting portion, and an absorption film formed on the top surface of part of an eave-like member that extends to the inside from the perimeter edge section of the temperature detecting portion and that absorbs Terahertz waves. The reflective film and the absorption film form an optical resonant structure. A thermal isolation structure is formed by a support portion that supports the temperature detecting portion such that it is separated from the substrate by a gap. The eave-like member is supported by the support portion so that it is separated from the substrate by a gap.

Abstract: The bolometer-type THz wave detector according to the present invention has a thermal isolation structure in which a temperature detecting portion including a bolometer thin film connected to electrical wirings is supported in a state of being raised from the substrate by a supporting portion including the electrical wirings connected to a Read-out integrated circuit formed in a substrate, and the detector comprises a reflective film formed on the substrate, an absorbing film formed on the front surface or back surface or at an inner position in the temperature detecting portion , whereby an optical resonant structure is formed by the reflective film and the absorbing film, and a dielectric film formed on the reflective film. The dielectric film thickness f is set so that air gap between an upper surface of the dielectric film and a lower surface of the temperature detecting portion is smaller than 8 ?m.

Abstract: The present invention is: a package main body section having a hollow section; and an electronic device provided in the hollow section in the package main body section, in the package main body section, there being formed a through hole, through which the hollow section communicates with outside of the package main body section, and in the through hole, there being provided a sealing section in which a vicinity of the through hole is partly heated and a constituent material of the package main body section is melted to thereby block the through hole.

Abstract: The bolometer-type THz wave detector according to the present invention has a thermal isolation structure in which a temperature detecting portion including a bolometer thin film connected to electrical wirings is supported in a state of being raised from the substrate by a supporting portion including the electrical wirings connected to a Read-out integrated circuit formed in a substrate, and the detector comprises a reflective film formed on the substrate, an absorbing film formed on the front surface or back surface or at an inner position in the temperature detecting portion , whereby an optical resonant structure is formed by the reflective film and the absorbing film, and a dielectric film formed on the reflective film. The dielectric film thickness f is set so that air gap between an upper surface of the dielectric film and a lower surface of the temperature detecting portion is smaller than 8 ?m.

Abstract: A first thermosensitive element including a temperature detecting unit that outputs a voltage corresponding to a temperature to which the unit rises from ambient temperature (temperature of surrounding environment) due to incident infrared, and a second thermosensitive element including a temperature detecting unit that outputs a voltage based on ambient temperature are formed above/on a silicon substrate. The temperature detecting unit of the first thermosensitive element is thermally insulated from the silicon substrate by a clearance (space). The temperature detecting unit of the second thermosensitive element is formed on a first sacrifice layer made of deposited diamond like carbon, and thermally connected to the silicon substrate by the first sacrifice layer. The infrared sensor detects an amount of incident infrared based on the difference between output voltages of the first and second thermosensitive elements.

Abstract: A vacuum sealed package includes a package main body portion in which a first main body portion and a second main body portion are bonded via a hollow portion, and a getter material and an electronic device that are provided within the hollow portion, and in the state of the hollow portion being evacuated via a through-hole that brings the inside and the outside of the hollow portion into communication, the package main body portion is sealed with a sealing member, the getter material and the electronic device are connected to a first conductor pad and a second conductor pad, the first conductor pad is connected with a third conductor pad via a thermally conductive material, and the second conductor pad is electrically connected with a fourth conductor pad on a wiring substrate.

Abstract: A bolometer type Terahertz wave detector comprises: a temperature detecting portion having a thin bolometer film formed on a substrate, a reflective film that reflects Terahertz waves formed on the substrate at a position facing the temperature detecting portion, and an absorption film formed on the top surface of part of an eave-like member that extends to the inside from the perimeter edge section of the temperature detecting portion and that absorbs Terahertz waves. The reflective film and the absorption film form an optical resonant structure. A thermal isolation structure is formed by a support portion that supports the temperature detecting portion such that it is separated from the substrate by a gap. The eave-like member is supported by the support portion so that it is separated from the substrate by a gap.

Abstract: The present invention is: a package main body section having a hollow section; and an electronic device provided in the hollow section in the package main body section, in the package main body section, there being formed a through hole, through which the hollow section communicates with outside of the package main body section, and in the through hole, there being provided a sealing section in which a vicinity of the through hole is partly heated and a constituent material of the package main body section is melted to thereby block the through hole.

Abstract: An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.

Abstract: A vacuum package has a chamber in which pressure is reduced to less than the atmospheric pressure, a functional component sealed in the chamber, and a material forming at least a part of the chamber. The material has at least one through hole to evacuate the chamber. In a cross section perpendicular to the material taken along the through hole, an edge portion of the material forming the through hole has an obtuse angle. The through hole is sealed with a sealing material.

Abstract: An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.

Abstract: A first thermosensitive element including a temperature detecting unit that outputs a voltage corresponding to a temperature to which the unit rises from ambient temperature (temperature of surrounding environment) due to incident infrared, and a second thermosensitive element including a temperature detecting unit that outputs a voltage based on ambient temperature are formed above/on a silicon substrate. The temperature detecting unit of the first thermosensitive element is thermally insulated from the silicon substrate by a clearance (space). The temperature detecting unit of the second thermosensitive element is formed on a first sacrifice layer made of deposited diamond like carbon, and thermally connected to the silicon substrate by the first sacrifice layer. The infrared sensor detects an amount of incident infrared based on the difference between output voltages of the first and second thermosensitive elements.

Abstract: A vacuum package has a chamber in which pressure is reduced to less than the atmospheric pressure, a functional component sealed in the chamber, and a material forming at least a part of the chamber. The material has at least one through hole to evacuate the chamber. In a cross section perpendicular to the material taken along the through hole, an edge portion of the material forming the through hole has an obtuse angle. The through hole is sealed with a sealing material.

Abstract: An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.

Abstract: A thermal-type infra-red ray solid-state image sensor includes at least one device for detecting infra-red ray, wherein the device is comprised of a substrate including a signal-readout circuit, a contact electrode formed on the substrate and electrically connected to the signal-readout circuit, a diaphragm spaced away from and above the substrate, a support supporting the diaphragm such that the diaphragm floats above the substrate, and being composed of electrically conductive material to electrically connect the contact electrode to the diaphragm, and a hood formed on the diaphragm for preventing infra-red ray from being radiated to the support, absorbing the infra-red ray, and transferring heat resulted from the thus absorbed infra-red ray, to the diaphragm. The hood is comprised of a sidewall standing on the diaphragm, and an upper plate extending inwardly of the sidewall from an upper edge of the sidewall, the upper plate being formed with an opening.

Abstract: A thermal-type infra-red ray solid-state image sensor includes at least one device for detecting infra-red ray, wherein the device is comprised of a substrate including a signal-readout circuit, a contact electrode formed on the substrate and electrically connected to the signal-readout circuit, a diaphragm spaced away from and above the substrate, a support supporting the diaphragm such that the diaphragm floats above the substrate, and being composed of electrically conductive material to electrically connect the contact electrode to the diaphragm, and a hood formed on the diaphragm for preventing infra-red ray from being radiated to the support, absorbing the infra-red ray, and transferring heat resulted from the thus absorbed infra-red ray, to the diaphragm. The hood is comprised of a sidewall standing on the diaphragm, and an upper plate extending inwardly of the sidewall from an upper edge of the sidewall, the upper plate being formed with an opening.

Abstract: A thermal-type infra-red ray solid-state image sensor includes at least one device for detecting infra-red ray, wherein the device is comprised of a substrate including a signal-reading circuit, a contact electrode formed on the substrate and electrically connected to the signal-reading circuit, a diaphragm spaced away from and above the substrate, a support supporting the diaphragm such that the diaphragm floats above the substrate, and being composed of electrically conductive material to electrically connect the contact electrode to the diaphragm, and a hood formed on the diaphragm for preventing infra-red ray from being radiated to the support, absorbing the infra-red ray, and transferring heat resulted from the thus absorbed infra-red ray, to the diaphragm. The hood is comprised of a sidewall standing on the diaphragm, and an upper plate extending inwardly of the sidewall from an upper edge of the sidewall, the upper plate being formed with an opening.