Abstract: A power device includes a substrate including a drift layer and having a first region and a second region, the drift layer having impurities of a first type; a switch formed in the first region; a diode formed in the second region; a metal structure formed over a surface of the substrate, the metal structure having a first thickness over the first region of the substrate and a second thickness over the second region of the substrate, the first thickness and second thickness having at least 3 um in thickness difference; and a zone provided in the drift layer in the second region of the substrate, the zone having impurities of a second type that is different from the first type.

Abstract: A power device includes a substrate including a drift layer and having a first region and a second region, the drift layer having impurities of a first type; a switch formed in the first region; a diode formed in the second region; a metal structure formed over a surface of the substrate, the metal structure having a first thickness over the first region of the substrate and a second thickness over the second region of the substrate, the first thickness and second thickness having at least 3 um in thickness difference; and a zone provided in the drift layer in the second region of the substrate, the zone having impurities of a second type that is different from the first type.

Abstract: A power supply device includes: a first supply section that supplies power in accordance with an extent of a load in processing in a processing device by applying a voltage to the processing device which processes data; and a second supply section that supplies, to the processing device, power smaller than the supplying power by the first supply section, in accordance with an extent of a load in processing in the processing device to increase and decrease a voltage with respect to the application voltage by the first supply section.

Abstract: Provided is a semiconductor device having an anode of a Si-FRD and a cathode of a Si-SBD which are serially connected. The Si-SBD has a junction capacitance whose amount of accumulable charge is equal to or more than an amount of charge occurring at the time of reverse recovery of the Si-FRD, and has a lower breakdown voltage than the Si-FRD does.

Abstract: In a pn junction diode having a conductivity modulating element provided on a first principal surface of a semiconductor substrate, when an impurity concentration of a p type impurity region is lowered to shorten a reverse recovery time, hole injection is suppressed, thereby causing a problem that a forward voltage value is increased at a certain current point. Moreover, introduction of a life time killer to shorten the reverse recovery time leads to a problem of increased leak current. On an n? type semiconductor layer that is a single crystal silicon layer, a p type polycrystalline silicon layer (p type polysilicon layer) is provided. Since the polysilicon layer has more grain boundaries than the single crystal silicon layer, an amount of holes injected into the n? type semiconductor layer from the p type polysilicon layer in forward voltage application can be suppressed.

Abstract: A power circuit and method thereof are provided. The power circuit includes an output circuit having an alternating current-coupling element and that supplies an output signal of the output circuit to an amplifier as a driving voltage. The power circuit includes an envelope signal-extracting unit extracting an envelope signal from a carrier wave, a simulation signal-waveform generating unit generating a simulation signal including a fluctuation component occurring when the envelope signal is transmitted to the output circuit, a fluctuation component-extracting unit extracting the fluctuation component included in the simulation signal, and an inverted component-generating unit generating an inverted component obtained by performing phase inversion for the fluctuation component, where the fluctuation component occurring in the output circuit is canceled out through the inverted component.

Abstract: A power supply device of the invention includes: a supply section that supplies power to a second processing device which processes data in response to processing execution by a first processing device which processes data; a load detection section that detects a load of processing execution by the first processing device; and a power control section that causes the supply section to increase or decrease power supply according to the magnitude of load detected by the load detection section. The load of processing execution by the first processing device disposed in the upstream side relative to the second processing device is detected, and power supply to the second processing device is increased or decreased according to the detected magnitude of load. Accordingly, even when the amount of processing data sharply increases, sufficient power can be unfailingly supplied to the second processing device.

Abstract: Disclosed is an exhaust gas purifying catalyst, which comprises a catalyst layer formed on a honeycomb-shaped support. The catalyst layer is formed by mixing a catalyst powder (A) consisting of a composite oxide (RhZrCeNdO) which contains at least Ce, Zr, and a catalytic noble metal composition, and a catalyst powder (B) consisting of a Zr-based oxide (RhZrXO) which contains at least Zr and has Rh existing on a surface thereof. A ratio (RhZrXO/RhZrCeNdO) of a mass of the catalyst powder (B) to a total mass of the catalyst powder (A) and the catalyst powder (B) may be set in the range of 1 to 50%. Further, the catalyst powder (B) may consist of a composite oxide which contains Zr as a primary component, a rare-earth metal except Ce, and Rh. The exhaust gas purifying catalyst of the present invention can provide enhanced exhaust gas conversion efficiency.

Abstract: Provided is a semiconductor device having an anode of a Si-FRD and a cathode of a Si-SBD which are serially connected. The Si-SBD has a junction capacitance whose amount of accumulable charge is equal to or more than an amount of charge occurring at the time of reverse recovery of the Si-FRD, and has a lower breakdown voltage than the Si-FRD does.

Abstract: An upstream catalyst and a downstream catalyst are disposed in an exhaust passage of an engine. The downstream catalyst contains in the same catalyst layer thereof. Rh-doped CeZrNd mixed oxide particles on which Rh is supported and active alumina particles on which Pt is supported. The upstream catalyst is a three-way catalyst containing an oxygen storage component having a lower oxygen storage capacity than the Rh-doped CeZrNd mixed oxide.

Abstract: A power supply device includes: a power supply connector which receives supply of power and supplies the power to the outside thereof; plural OBPs which apply voltages to supply power, to each of processing devices to perform processing and to include different types of application voltages planned to be applied, and each of the plural OBPs is supplied with power directly or indirectly from the power supply connector; and a power supply control section that increases and decreases supplying power which each of the OBPs supplies to one processing device out of the plural processing devices according to an extent of a processing load in the one processing device as well as according to an extent of a processing load in another processing device whose application voltage is different from that of the one processing device.

Abstract: A power supply device includes: a first supply section that supplies power in accordance with an extent of a load in processing in a processing device by applying a voltage to the processing device which processes data; and a second supply section that supplies, to the processing device, power smaller than the supplying power by the first supply section, in accordance with an extent of a load in processing in the processing device to increase and decrease a voltage with respect to the application voltage by the first supply section.

Abstract: A power supply device includes: a power supply plane to which a processing circuit is electrically connected to supply electrical power to the processing circuit and in which the processing circuits are connected to each supply place; plural OBP's each of which applies a voltage to the power supply plane to supply electrical power to the processing circuits via the power supply plane; and a power supply control section which controls an application voltage in individual one of the OBP's by reflecting a status of power supplying in other OBP's other than the individual one out of the plural OBP's to uniform a dispersion of voltages between the supply places.

Abstract: A power supply device includes a first supply section that supplies power according to an extent of a collective load of processing in a processing apparatus for the whole of the processing apparatus which processes data, and further includes a second supply section that supplies, at a place on a supply path through which power is supplied from the first supply section to the processing apparatus, power according to an extent of a load of processing in local in a portion of the processing apparatus to the portion, and supplies power smaller than supplying power of the first supply section.

Abstract: An exhaust gas purification catalyst includes a support and a catalytic layer provided on the support. The catalytic layer contains: a NOx storage material which stores NOx in exhaust gas when an air-fuel ratio of the exhaust gas is leaner than a stoichiometric air-fuel ratio, and releases the NOx when the air-fuel ratio is close to the stoichiometric air-fuel ratio or richer than the stoichiometric air-fuel ratio; and CePr-based mixed oxide particles doped with a catalytic metal and formed by complexing at least Ce and Pr. The CePr-based mixed oxide particles contain a Ce oxide and a Pr oxide which are at least partially dissolved in each other. The catalytic metal is dissolved in the oxide particles.

Abstract: An exhaust gas purification catalyst comprises: an oxygen storage component constituted by a mixed oxide containing cerium and zirconium; and a catalytic metal carried on the oxygen storage component. The oxygen storage component is in the form of hollow secondary particles each formed so that primary particles of an average particle size of less than 10 nm cohere into a shell.

Abstract: An exhaust gas purification catalyst includes a catalyst layer formed on a support. The catalyst layer contains Ce-containing oxide particles having an oxygen storage/release capacity and a catalytic metal. The catalyst layer further contains a large number of iron oxide particles of 300 nm diameter or less that are dispersed therein and are in contact with the Ce-containing oxide particles. When observed by electron microscopy, the proportion of the area of iron oxide particles of 300 nm diameter or less to the total area of all of iron oxide particles in the catalyst layer is 30% or more.

Abstract: An exhaust gas purifying catalyst comprising: a honeycomb-like substrate disposed in an exhaust passage for an engine; and a catalytic layer formed on a cell wall of said substrate, said catalytic layer including a mixed oxide which contains Ce (cerium) and Zr (zirconium), and retains a catalytic noble metal in such a manner that said noble metal atoms are located at crystal lattice points or between the lattice points of the mixed oxide, wherein said mixed oxide includes a first mixed oxide containing CeO2 in a mass greater than that of ZrO2, and a second mixed oxide containing ZrO2 in a mass greater than that of CeO2.

Abstract: In a pn junction diode having a conductivity modulating element provided on a first principal surface of a semiconductor substrate, when an impurity concentration of a p type impurity region is lowered to shorten a reverse recovery time, hole injection is suppressed, thereby causing a problem that a forward voltage value is increased at a certain current point. Moreover, introduction of a life time killer to shorten the reverse recovery time leads to a problem of increased leak current. On an n? type semiconductor layer that is a single crystal silicon layer, a p type polycrystalline silicon layer (p type polysilicon layer) is provided. Since the polysilicon layer has more grain boundaries than the single crystal silicon layer, an amount of holes injected into the n? type semiconductor layer from the p type polysilicon layer in forward voltage application can be suppressed.

Abstract: A Ce—Zr mixed oxide is employed as an oxygen storage component for a lean-NOx catalyst, and catalytic precious metal atoms are placed at and/or between crystal lattice points of the mixed oxide. This structure prevents the sintering of the precious metal and accelerates movement of oxygen ions in each of crystallites of the Ce—Zr mixed oxide to increase the oxygen storage/release amount of the mixed oxide, which enhances the NOx removal performance of the catalyst.