Abstract: Disclosed are: a method for producing a silicon nitride film, wherein generation of blisters at the periphery of a substrate is suppressed when a silicon nitride film is formed through application of a bias power; and an apparatus for producing a silicon nitride film. Specifically disclosed are a method and apparatus for producing a silicon nitride film, wherein a silicon nitride film used for a semiconductor element is formed on a substrate by plasma processing. In the method and apparatus for producing a silicon nitride film, a bias is applied to the substrate at time (b1), and a starting material gas SiH4 for the silicon nitride film is started to be supplied at time (b3) after the application of the bias.

Abstract: In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate 21, which is a target for plasma processing, by using plasma of a raw material gas containing silicon and hydrogen and of a gas containing nitrogen, the bias power to inject ions into the substrate 21 is set equal to or higher than a threshold to increase a Si—H bonding amount, thereby reducing compression stress.

Abstract: A 5-aminolevulinic acid salt which is useful in fields of microorganisms, fermentation, animals, medicaments, plants and the like; a process for producing the same; a medical composition comprising the same; and a plant activator composition comprising the same.

Abstract: Disclosed are: a method for producing a silicon nitride film, wherein generation of blisters at the periphery of a substrate is suppressed when a silicon nitride film is formed through application of a bias power; and an apparatus for producing a silicon nitride film. Specifically disclosed are a method and apparatus for producing a silicon nitride film, wherein a silicon nitride film used for a semiconductor element is formed on a substrate by plasma processing. In the method and apparatus for producing a silicon nitride film, a bias is applied to the substrate at time (b1), and a starting material gas SiH4 for the silicon nitride film is started to be supplied at time (b3) after the application of the bias.

Abstract: Provided is an inductively coupled plasma generation device capable of having both a wide matching range and reduced loss. An inductively coupled plasma generation device in which high harmonic waves from a high harmonic wave power source (11) are supplied to an antenna (14) by way of a matching device (12) which matches impedance, and plasma is generated in a vacuum vessel by electromagnetic waves from the antenna (14), wherein an L-type matching circuit is used as the matching device (12) and a capacitor (C3) is provided parallel to the antenna (14) at a position closer to the antenna (14) than capacitors (C1, C2) in the L-type matching circuit.

Abstract: Disclosed are: a silicon nitride film of a semiconductor element, which is formed by applying a bias power and appropriately controls hydrogen leaving from the silicon nitride film; and a method and apparatus for producing a silicon nitride film. Specifically disclosed is a silicon nitride film which is formed on a substrate (19) by plasma processing and used in a semiconductor element. If the silicon nitride film is in contact with a film (41) to which supply of hydrogen is required to be shut off, the silicon nitride film is configured of a biased SiN (31) that is formed by applying a bias to the substrate (19) and an unbiased SiN (32) that is formed without applying a bias to the substrate (19) and the unbiased SiN (32) is arranged on the side on which the silicon nitride film is in contact with the film (41).

Abstract: Disclosed is a silicon nitride film for a semiconductor element, wherein changes of film stress of the silicon nitride film are suppressed, said silicon nitride film being formed by applying bias power. Also disclosed are a method and an apparatus for manufacturing the silicon nitride film. The silicon nitride film, which is formed on a substrate (19) by plasma processing, and which is to be used in the semiconductor element, has a structure wherein a biased SiN film (31) formed by applying bias to the substrate (19) is sandwiched between an unbiased SiN film (32a) and an unbiased SiN film (32b), which are formed by not applying bias to the substrate (19).

Abstract: A 5-aminolevulinic acid salt which is useful in fields of microorganisms, fermentation, animals, medicaments, plants and the like; a process for producing the same; a medical composition comprising the same; and a plant activator composition comprising the same.

Abstract: A 5-aminolevulinic acid salt which is useful in fields of microorganisms, fermentation, animals, medicaments, plants and the like; a process for producing the same; a medical composition comprising the same; and a plant activator composition comprising the same.

Abstract: In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate 21, which is a target for plasma processing, by using plasma of a raw material gas containing silicon and hydrogen and of a gas containing nitrogen, the bias power to inject ions into the substrate 21 is set equal to or higher than a threshold to increase a Si—H bonding amount, thereby reducing compression stress.

Abstract: An object is to provide a plasma film forming apparatus capable of reducing particles even in the case in which a film is formed by applying a bias to a substrate. In the plasma film forming apparatus in which a bias is applied to a substrate (5) placed on a supporting table (4) in a chamber and forming a thin film on the substrate (5) by using plasma, the supporting table (4) has a columnar supporting table main body (4b) having a contact surface in contact with the substrate (5), the contact surface (4a) having an outer diameter (c) smaller than an outer diameter (W) of the substrate (5); and a flange portion (4c) extended in an outer circumferential direction from a side surface (4d) of the supporting table main body (4b); wherein a predetermined first gap (G1) is formed between the flange portion (4c) and a rear surface of the outer circumference of the substrate (5).

Abstract: PCs 10-1 to 10-5 are computers used by staff members and each computer has function for making schedule information and application information correlated with the schedules in response to operation of each staff member. A local server 20 is a computer which preserves the schedule information produced by the PCs 10-1 to 10-5, circulates application document information relating to the schedule information among the PCs, and manages approval conditions of the applications. Data of an application which has been approved are sent from the local server 20 to an account system not shown, where the data are subjected to account processing concerning the application.

Abstract: A 5-aminolevulinic acid salt which is useful in fields of microorganisms, fermentation, animals, medicaments, plants and the like; a process for producing the same; a medical composition comprising the same; and a plant activator composition comprising the same.

Abstract: &agr;-Hydroxy-&ggr;-carboxymuconic acid-&egr;-semialdehyde dehydrogenase, a gene encoding the enzyme, a recombinant vector containing the gene and a transformant carrying the gene, and processes for producing the enzyme and 2-pyrone-dicarboxylic acid by using the transformant. Use of the transformant can produce &agr;-hydroxy-&ggr;-carboxymuconic acid-&egr;-semialdehyde dehydrogenase in a large amount, thereby permitting industrial production of 2-pyrone-4,6-dicarboxylic acid.

Abstract: Accounting data input into PC 20 are stored at first in Before-allocation Accounting Data Storage Unit 15a. Then an allocation processing is implemented on the basis of Allocation Table 15b and the accounting data are stored in After-allocation Accounting Data Storage Unit 15c. In Allocation Table 15b various allocation patterns have been stored beforehand and the most appropriate allocation pattern is chosen in accordance with the input accounting data.

Abstract: PCs 10-1 to 10-5 are computers used by stuff members and each computer has function for making schedule information and application information correlated with the schedules in response to operation of each stuff member. A local server 20 is a computer which preserves the schedule information produced by the PCs 10-1 to 10-5, circulates application document information relating to the schedule information among the PCs, and manages approval conditions of the applications. Data of an application which has been approved are sent from the local server 20 to an account system not shown, where the data are subjected to account processing concerning the application.

Abstract: &agr;-Hydroxy-&ggr;-carboxymuconic acid-&egr;-semialdehyde dehydrogenase, a gene encoding the enzyme, a recombinant vector containing the gene and a transformant carrying the gene, and processes for producing the enzyme and 2-pyrone-dicarboxylic acid by using the transformant.

Abstract: Microorganisms producing 5-aminolevulinic acid which show a 5-aminolevulinic acid synthetase activity of 2 to 7 (nmol/min/mg protein) under aerobic culture conditions with a dissolved oxygen concentration of 0.70 to 6.60 ppm; a process for producing 5-aminolevulinic acid characterized by culturing one or more microorganisms and harvesting 5-aminolevulinic acid from the obtained culture; a process for producing 5-aminolevulinic acid characterized by culturing 5-aminolevulinic acid-producing microorganisms in a medium containing 5 to 500 &mgr;M of iron components; and a method for culturing 5-aminolevulinic acid-producing microorganisms.

Abstract: &agr;-Hydroxy-&ggr;-carboxymuconic acid-&egr;-semialdehyde dehydrogenase, a gene encoding the enzyme, a recombinant vector containing the gene and a transformant carrying the gene, and processes for producing the enzyme and 2-pyrone-dicarboxylic acid by using the transformant. Use of the transformant can produce &agr;-hydroxy-&ggr;-carboxymuconic acid-&egr;-semialdehyde dehydrogenase in a large amount, thereby permitting industrial production of 2-pyrone-4,6-dicarboxylic acid.

Abstract: A polyamide having repeating units represented by formula (1), wherein R1 represents a divalent hydrocarbon residue optionally having in the structure a heteroatom having no active hydrogen. The polyamide has a high refractive index, is biodegradable, and is useful as a material for fibers and plastics.