Patents by Inventor Seiji Oguri
Seiji Oguri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220389612Abstract: An ingot having a first surface, a second surface opposite to the first surface, and a third surface extending in a first direction from the second surface to the first surface and connecting the first and second surfaces includes a first mono-like crystalline portion, a first intermediate portion including one or more mono-like crystalline sections, and a second mono-like crystalline portion sequentially adjacent to one another in a second direction perpendicular to the first direction. The first and second mono-like crystalline portions have a greater width than the first intermediate portion in the second direction. A first boundary between the first mono-like crystalline portion and the first intermediate portion and a second boundary between the second mono-like crystalline portion and the first intermediate portion each include a coincidence boundary. At least one of the first or second boundary is curved in an imaginary cross section perpendicular to the first direction.Type: ApplicationFiled: July 30, 2020Publication date: December 8, 2022Inventors: Youhei OGASHIWA, Seiji OGURI, Takeshi TAKENOSHITA
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Publication number: 20200066923Abstract: A solar cell module includes first and second plates, a solar cell section positioned in a gap between the first plate and the second plate, and a plurality of wiring materials electrically connected to the solar cell section. The first plate has a first face, and a second face opposite the first face. The second plate has a third face opposed to the second face, and a fourth face opposite the third face. At least one of the first and second plates has a light-transmitting property. At least one wiring material of the plurality of wiring materials is positioned from the inside of the gap to the outside of the gap, along a cutout part that is cut out in a part along one side of the second plate with the first plate as a reference, in plan view of the second plate part.Type: ApplicationFiled: October 31, 2017Publication date: February 27, 2020Inventors: Junji ARANAMI, Yusuke MIYAMICHI, Hirotaka SANO, Eigo TAKAHASHI, Seiji OGURI
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Patent number: 9287434Abstract: Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.Type: GrantFiled: June 18, 2012Date of Patent: March 15, 2016Assignee: KYOCERA CorporationInventors: Akio Yamamoto, Seiji Oguri, Hiromitsu Ogawa, Aki Kitabayashi, Shinichi Abe, Kazumasa Umesato, Norihiko Matsushima, Keizo Takeda, Manabu Kyuzo, Ken Nishiura, Atsuo Hatate
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Patent number: 9184329Abstract: A photoelectric conversion device is disclosed. The photoelectric conversion device includes an electrode layer and a semiconductor layer. The semiconductor layer is located on the electrode layer and contains a group I-III-VI compound. In the semiconductor layer, an atomic ratio of a group I-B element to a group III-B element decreases from one principal surface side of the semiconductor layer on the electrode layer side to a central portion in a thickness direction and increases from the central portion to another principal surface side on a side opposite to the electrode layer.Type: GrantFiled: May 29, 2012Date of Patent: November 10, 2015Assignee: KYOCERA CorporationInventors: Shinichi Abe, Akio Yamamoto, Seiji Oguri, Kazumasa Umesato
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Patent number: 8916905Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.Type: GrantFiled: April 22, 2011Date of Patent: December 23, 2014Assignee: KYOCERA CorporationInventors: Shintaro Kubo, Shuji Nakazawa, Rui Kamada, Seiji Oguri, Shinnosuke Ushio, Shuichi Kasai, Seiichiro Inai
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Patent number: 8772826Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.Type: GrantFiled: May 30, 2011Date of Patent: July 8, 2014Assignee: KYOCERA CorporationInventors: Hideaki Asao, Rui Kamada, Shuichi Kasai, Seiji Oguri, Isamu Tanaka, Nobuyuki Horiuchi, Kazumasa Umesato
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Publication number: 20140127851Abstract: Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.Type: ApplicationFiled: June 18, 2012Publication date: May 8, 2014Applicant: KYOCERA CORPORATIONInventors: Akio Yamamoto, Seiji Oguri, Hiromitsu Ogawa, Aki Kitabayashi, Shinichi Abe, Kazumasa Umesato, Norihiko Matsushima, Keizo Takeda, Manabu Kyuzo, Ken Nishiura, Atsuo Hatate
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Publication number: 20140069492Abstract: A photoelectric conversion device is disclosed. The photoelectric conversion device includes an electrode layer and a semiconductor layer. The semiconductor layer is located on the electrode layer and contains a group I-III-VI compound. In the semiconductor layer, an atomic ratio of a group I-B element to a group III-B element decreases from one principal surface side of the semiconductor layer on the electrode layer side to a central portion in a thickness direction and increases from the central portion to another principal surface side on a side opposite to the electrode layer.Type: ApplicationFiled: May 29, 2012Publication date: March 13, 2014Applicant: KYOCERA CORPORATIONInventors: Shinichi Abe, Akio Yamamoto, Seiji Oguri, Kazumasa Umesato
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Publication number: 20130125982Abstract: It is aimed to provide a photoelectric conversion device having high adhesion between a light-absorbing layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises a light-absorbing layer including a chalcopyrite-based compound semiconductor and oxygen. The light-absorbing layer includes voids therein. An atomic concentration of oxygen in the vicinity of the voids is higher than an average atomic concentration of oxygen in the light-absorbing layer.Type: ApplicationFiled: July 27, 2011Publication date: May 23, 2013Applicant: KYOCERA CORPORATIONInventors: Seiji Oguri, Isamu Tanaka, Norihiko Matsushima, Akio Yamamoto
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Publication number: 20130069187Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.Type: ApplicationFiled: May 30, 2011Publication date: March 21, 2013Applicant: KYOCERA CORPORATIONInventors: Hideaki Asao, Rui Kamada, Shuichi Kasai, Seiji Oguri, Isamu Tanaka, Nobuyuki Horiuchi, Kazumasa Umesato
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Publication number: 20130037901Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.Type: ApplicationFiled: April 22, 2011Publication date: February 14, 2013Applicant: KYOCERA CORPORATIONInventors: Shintaro Kubo, Shuji Nakazawa, Rui Kamada, Seiji Oguri, Shinnosuke Ushio, Shuichi Kasai, Seiichiro Inai
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Publication number: 20120319244Abstract: A method for manufacturing a semiconductor layer according to an embodiment of the present invention comprises preparing a first compound, preparing a second compound, making a semiconductor layer forming solution, and forming a semiconductor layer including a group compound by using this semiconductor layer forming solution. The first compound contains a first chalcogen-element-containing organic compound, a first Lewis base, a I-B group element, and a first III-B group element. The second compound contains an organic ligand and a second III-B group element. The semiconductor layer forming solution contains the first compound, the second compound, and an organic solvent.Type: ApplicationFiled: January 25, 2011Publication date: December 20, 2012Applicant: KYOCERA CORPORATIONInventors: Seiji Oguri, Keizo Takeda, Koichiro Yamada, Kotaro Tanigawa, Isamu Tanaka, Riichi Sasamori, Hiromitsu Ogawa