Abstract: A magnetic tunnel element (1) including a plurality of ferromagnetic films (5, 9) laminated across an insulating film (11) formed of metal oxide films (6, 7, 8) and in which asymmetric tunnel barriers are formed along the direction in which the ferromagnetic films (5, 9) are laminated by this insulating film (11) (6, 7, 8). There are also constructed a thin-film magnetic head, a magnetic memory and a magnetic sensor, each of which includes the magnetic tunnel element (1). Since a magnetoresistive ratio can be suppressed from being lowered by decreasing a bias voltage dependency, there are provided a highly-reliable magnetic tunnel element which can obtain a high output when the magnetic tunnel element is applied to a thin-film magnetic head and the like and a method of manufacturing such a magnetic tunnel element. When a magnetic head, a magnetic memory and a magnetic sensor include this magnetic tunnel element, they become highly reliable and also become able to obtain a high output.

Abstract: The part of an MR element 25 which lies close to a medium-facing surface 10a overlaps that part of a flux-guiding element 24 which lies remote from the medium-facing surface 10a, with a second gap film 23b interposed between the elements 24 and 25. Further, the MR element 25 overlaps the flux-guiding element 24 for a distance that falls within a range of 15 to 25% of the length of the MR height of the element 25 as measured in a direction perpendicular to the medium-facing surface 10a.

Abstract: In a magnetic tunnel effect type magnetic head 20 having a magnetic tunnel junction element 26 sandwiched with conductive gap layers 25 and 27 between a pair of magnetic shielding layers 24 and 28, the conductive gap layers 25 and 27 are formed from at least one nonmagnetic metal layer containing a metal element selected from Ta, Ti, Cr, W, Mo, V, Nb and Zr. Therefore, the magnetic head 20 can have an improved face opposite to a magnetic recording medium.

Abstract: A magnetic tunnel effect type magnetic head comprising a first soft magnetic conductive layer which is to provide a lower shielding layer 24, a metal oxide layer 25 and a first nonmagnetic conductive layer, formed on the first soft magnetic conductive layer, to provide a lower gap layer 26, a magnetic tunnel junction layer 34 formed on the first nonmagnetic conductive layer to provide a magnetic tunnel junction element 27, a second nonmagnetic conductive layer formed on the magnetic tunnel junction layer 34 to provide an upper gap layer 28; and a second soft magnetic conductive layer formed on the second nonmagnetic conductive layer to provide an upper shielding layer 29, the metal oxide layer 25 in the lower gap layer 26 being formed beneath at least the magnetic tunnel junction layer 27.

Abstract: A magnetoresistive head includes a magnetoresistive element sandwiched between a pair of soft magnetic material-made shields to detect signal from a magnetic tape under a magnetoresistance effect, the magnetoresistive element having a magnetic sensor disposed obliquely, at a predetermined azimuth angle, to a direction perpendicular in which the magnetic tape is fed or moved; the magnetoresistive head being installed on a rotating drum to read signal on the magnetic tape by the helical scanning method. A recording/reproducing apparatus includes a rotating drum having installed thereon the magnetoresistive head as reading head and an inductive magnetic head as writing head, to write and/or read signal from the magnetic tape by the helical scanning method.