Patents by Inventor Seiji Takahashi

Seiji Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210340731
    Abstract: A first torque control proportional electromagnetic valve (37) is connected through a first torque control line (41) to a third pressure receiving chamber (32D) in a first torque control regulator (32). A second torque control proportional electromagnetic valve (38) is connected through a second torque control line (42) to a third pressure receiving chamber (35D) in a second torque control regulator (35). The first and second torque control proportional electromagnetic valves (37, 38) are controlled by a controller 47. A switching valve (48) is provided between the first torque control line (41) and the second torque control line (42). The switching valve (48) supplies an output pressure of the first torque control proportional electromagnetic valve (37) to the third pressure receiving chamber (35D) in the second torque control regulator (35) at the time of driving hydraulic motors (2B, 2C) for left side and right side traveling.
    Type: Application
    Filed: September 8, 2017
    Publication date: November 4, 2021
    Inventors: Kiwamu TAKAHASHI, Kouji ISHIKAWA, Yasutaka TSURUGA, Masatoshi HOSHINO, Seiji HIJIKATA
  • Publication number: 20210343838
    Abstract: A semiconductor device includes a source/drain diffusion area, a first doped region and a gate. The source/drain diffusion area, defined between a first isolation structure and a second isolation structure, includes a source region, a drain region and a device channel. The first doped region, disposed along a first junction between the device channel and the first isolation structure, is separated from at least one of the source region and the drain region. The first doped region has a dopant concentration higher than that of the device channel. The gate is disposed over the source/drain diffusion area. The first doped region is located within a projected area of the gate onto the source/drain diffusion area, the first isolation structure and the second isolation structure. A length of the first doped region is shorter than a length of the gate in a direction from the source region to the drain region.
    Type: Application
    Filed: July 16, 2021
    Publication date: November 4, 2021
    Inventors: KUO-YU CHOU, SEIJI TAKAHASHI, SHANG-FU YEH, CHIH-LIN LEE, CHIN YIN, CALVIN YI-PING CHAO
  • Patent number: 11163254
    Abstract: An image forming system includes a processing tray, a detecting unit, a stapling unit, a discharge tray, an instruction unit, and a control unit. Recording material, placed on the processing tray, is detected by the detecting unit. When instructed, the stapling unit can staple the detected recording material. Stapled recording material then is discharged to the discharge tray. The control unit controls switching between a first mode wherein a stapling process is executed and a second mode where the stapling unit executes the stapling process after the detecting unit detects recording material inserted into the processing tray and the execution instruction are received. If an instruction to interrupt a power supply of the image forming system is received in the second mode, the control unit causes recording material inserted into the processing tray to discharge to the discharge tray and then interrupts the power supply without the stapling process executing.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: November 2, 2021
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ryo Takaba, Seiji Yokoyama, Genki Takahashi
  • Patent number: 11156473
    Abstract: [Object] An object of the present technology is to provide an information processing apparatus, an information processing system, and an information processing method capable of allowing a user to approach a destination intuitively. [Solving Means] An information processing apparatus according to the present technology includes a position-coordinate acquisition part, a direction acquisition part, a direction calculation part, and a haptic-feedback determining part. The position-coordinate acquisition part acquires a position coordinate of the information processing apparatus. The direction acquisition part acquires an apparatus direction that the information processing apparatus faces. The direction calculation part calculates a target direction being a direction of a target with respect to the information processing apparatus from a position coordinate of the target and the position coordinate of the information processing apparatus.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: October 26, 2021
    Assignee: Sony Corporation
    Inventors: Ryo Yokoyama, Akira Ono, Tetsuya Naruse, Mikio Takenaka, Ryosuke Murakami, Hideaki Hayashi, Mioko Ambe, Ryosuke Takeuchi, Kazutoshi Ohno, Seiji Muramatsu, Tetsuya Takahashi
  • Publication number: 20210326666
    Abstract: An RFID tag is provided with an antenna for generating electric power from a carrier wave by a received electromagnetic wave, a semiconductor integrated circuit which is operated by the electric power supplied from the antenna; and a heat generation element for generating heat by the electric power supplied from the antenna, and heating the semiconductor integrated circuit.
    Type: Application
    Filed: July 1, 2021
    Publication date: October 21, 2021
    Inventors: Kiminori MIZUUCHI, Yorio TAKAHASHI, Seiji MURAKAMI
  • Patent number: 11149753
    Abstract: A controller (45) is provided with an elapse time measuring section (47A) that measures an elapse time (tx) elapsed since an initial use of an accumulator (29) based upon a reset signal from a reset switch (44), a number-of-operations measuring section (47B) that measures a number of operations of the accumulator (29), that is, a number (N) of boom lowering operations after a reset, based upon a detection signal from an accumulator side pressure sensor (39), a gas permeation amount estimating section (47C) that estimates an estimation gas permeation amount (Qloss) of the accumulator (29), a sealed gas pressure estimating section (47D) that finds an estimation sealed gas pressure (Pgs) of a gas chamber (29B) of the accumulator (29), and an accumulator degradation determining section (47E) that determines a degradation condition of the accumulator (29) and outputs the determination result.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: October 19, 2021
    Assignee: Hitachi Construction Machinery Co., Ltd.
    Inventors: Kiwamu Takahashi, Seiji Hijikata, Masatoshi Hoshino, Yuichi Ogawa, Kouji Ishikawa
  • Patent number: 11150588
    Abstract: A sheet processing apparatus includes a conveying portion for conveying sheets, a conveying path for sheets, a stack portion for stacking sheets, a first binding portion having a first binding member and moving in a crossing direction crossing to the conveying direction, a first regulating portion which regulates a position of a sheet bundle stacked on the stack portion, a second regulating portion which regulates a position of a sheet bundle stacked on the stack portion, a third regulating portion which regulates a position of a sheet bundle, and a second binding portion which has a second binding member and binds a corner portion of a sheet bundle without a staple. The first binding portion binds a corner portion of a sheet bundle by a staple. The second binding member is located at a downstream of the first binding member in the conveying direction.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: October 19, 2021
    Assignee: CANON FINETECH NISCA INC.
    Inventors: Yusuke Obuchi, Hideto Abe, Masaya Takahashi, Seiji Nishizawa
  • Publication number: 20210313365
    Abstract: Various embodiments of the present disclosure are directed towards a method for forming a pixel sensor. The method comprises forming a photodetector in a substrate. The substrate is patterned to define an opening above the photodetector. A gate electrode is formed within the opening, where the gate electrode has a top conductive body overlying a bottom conductive body. A first segment of a sidewall of the top conductive body contacts the bottom conductive body. A floating diffusion node is formed in the substrate laterally adjacent to the gate electrode. A second segment of the sidewall of the top conductive body overlies the floating diffusion node.
    Type: Application
    Filed: June 17, 2021
    Publication date: October 7, 2021
    Inventor: Seiji Takahashi
  • Patent number: 11139367
    Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric structure disposed over a substrate. A plurality of conductive interconnect layers are disposed within the dielectric structure. The plurality of conductive interconnect layers include alternating layers of interconnect wires and interconnect vias. A metal-insulating-metal (MIM) capacitor is arranged within the dielectric structure. The MIM capacitor has a lower conductive electrode separated from an upper conductive electrode by a capacitor dielectric structure. The MIM capacitor vertically extends past two or more of the plurality of conductive interconnect layers.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: October 5, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Seiji Takahashi, Chen-Jong Wang, Dun-Nian Yaung, Jung-I Lin, Jhy-Jyi Sze, Alexander Kalnitsky, Yimin Huang, King Liao, Shen-Hui Hong
  • Patent number: 11127844
    Abstract: A semiconductor device includes: a drift layer; a mesa region that is interposed between adjacent trenches on the drift layer; a gate electrode buried in each trench through a gate insulating film; a base region of buried in the mesa region; a plurality of emitter regions that are periodically buried in a surface layer portion of the base region along a longer direction of the trench; and contact regions that are alternately buried in the longer direction together with the emitter regions such that each emitter region is interposed between the contact regions, are deeper than the emitter region, and extend immediately below the emitter region so as to be separated from each other, a contact-region contact-width in the longer direction defined in a surface of the contact region being less than an emitter-region contact-width in the longer direction defined in a surface of the emitter region.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: September 21, 2021
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Hitoshi Abe, Hiroshi Miyata, Hidenori Takahashi, Seiji Noguchi, Naoya Shimada
  • Publication number: 20210280620
    Abstract: In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.
    Type: Application
    Filed: May 5, 2021
    Publication date: September 9, 2021
    Inventors: Seiji Takahashi, Chen-Jong Wang, Dun-Nian Yaung, Feng-Chi Hung, Feng-Jia Shiu, Jen-Cheng Liu, Jhy-Jyi Sze, Chun-Wei Chang, Wei-Cheng Hsu, Wei Chuang Wu, Yimin Huang
  • Patent number: 11112743
    Abstract: A recording material processing apparatus includes: a first stacking unit configured to stack a recording material; a second stacking unit provided on a downstream side of the first stacking unit in a conveyance direction of the recording material; an alignment unit configured to align the recording material stacked in the first stacking unit before the recording material is discharged to the second stacking unit; and a control unit configured to perform control of discharging the recording material to the second stacking unit by switching between first control not to align the recording material by the alignment unit and second control to align the recording material by the alignment unit.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: September 7, 2021
    Assignee: Canon Kabushiki Kaisha
    Inventors: Genki Takahashi, Kazuhisa Sato, Seiji Yokoyama
  • Patent number: 11105070
    Abstract: To increase frequency of use of auto idle, an engine is accelerated even more quickly than before and work involving a heavy load can be performed within a short period of time when an operator resumes work and recovers a speed of the engine. When an operation lever device is operated and the speed is low because of auto idle control, a pilot pump is unloaded to thereby reduce load torque on the engine. Operation of a compressor is also suspended while an air conditioner is operating. Furthermore, for a target speed of the engine, a speed at which work can be performed is set and the engine is accelerated. When the engine thereafter reaches a predetermined speed or a predetermined period of time thereafter elapses, the pilot pump is loaded and the operation of the compressor for the air conditioner is resumed.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: August 31, 2021
    Assignee: HITACHI CONSTRUCTION MACHINERY CO., LTD.
    Inventors: Masatoshi Hoshino, Kiwamu Takahashi, Seiji Hijikata
  • Patent number: 11102396
    Abstract: An electronic device sets, in accordance with a use operation, which one of a plurality of objects is to be used to display a specific setting item on a setting screen. The plurality of objects include a first object and a second object whose display size, information amount to be displayed, and number of types of operable setting values are larger than the first object. In case where the first object is displayed on the setting screen, the electronic device changes a first setting value concerning the specific setting item in accordance with an operation on one of a first or second operation member. In case where the second object is displayed on the setting screen, the electronic device changes the first and second setting values in accordance with the operations on the first and second operation members, respectively.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: August 24, 2021
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Seiji Kobayashi, Yuko Izaki, Makoto Kameyama, Kazutaka Kondo, Tomoaki Takahashi
  • Patent number: 11075267
    Abstract: A semiconductor device comprises a source/drain diffusion area, and a first doped region. The source/drain diffusion area is defined between a first isolation structure and a second isolation structure. The source/drain diffusion area includes a source region, a drain region, and a device channel. The device channel is between the source region and the drain region. The first doped region is disposed along a first junction between the device channel and the first isolation structure in a direction from the source region to the drain region. The first doped region is separated from at least one of the source region and the drain region, and has a dopant concentration higher than that of the device channel. The semiconductor device of the present disclosure has low random telegraph signal noise and fewer defects.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: July 27, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Kuo-Yu Chou, Seiji Takahashi, Shang-Fu Yeh, Chih-Lin Lee, Chin Yin, Calvin Yi-Ping Chao
  • Patent number: 11069728
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a photodetector disposed in a semiconductor substrate. A floating diffusion node is disposed in the semiconductor substrate and is above the photodetector. A transfer gate electrode overlies the photodetector. The transfer gate electrode has a top conductive body overlying a top surface of the semiconductor substrate and a bottom conductive body extending from the top conductive body to below the floating diffusion node. A portion of the top conductive body directly overlies the floating diffusion node. A first sidewall of the top conductive body directly overlies the bottom conductive body.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: July 20, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Seiji Takahashi
  • Patent number: 11052771
    Abstract: Provided is a vehicle-mounted power supply device detecting connection with an external power source and charging a power storage unit by stepping up a supply voltage based on the external power source. A vehicle-mounted power supply device includes an external terminal to which a power supply path from an external power source is connectable, a detection unit detects that the power supply path is connected to the external terminal, and a power supply circuit unit allows for flow of a current from the external terminal side toward the second conduction path side at least when the power supply path is connected to the external terminal. The control unit controls a step-down operation and a step-up operation of the voltage conversion unit, and causes the voltage conversion unit to perform the step-up operation when connection between the external terminal and the power supply path is detected by the detection unit.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: July 6, 2021
    Assignees: AutoNetworks Technologies, Ltd., Sumitomo Wiring Systems, Ltd., Sumitomo Electric Industries, Ltd.
    Inventors: Takanori Itou, Seiji Takahashi
  • Publication number: 20210195125
    Abstract: An image sensor semiconductor device includes a first photodiode disposed in a semiconductor substrate and configured to generate charges in response to radiation, a first transistor disposed adjacent to the first photodiode, a floating diffusion region configured to store the generated charges, a reset transistor configured to reset the floating diffusion region, and a second transistor disposed over the substrate between the first photodiode and the reset transistor. The first transistor and the second transistor are configured to generate a first electric field and a second electric field, respectively, to move the charges generated by the first photodiode to the floating diffusion region.
    Type: Application
    Filed: March 5, 2021
    Publication date: June 24, 2021
    Inventors: SEIJI TAKAHASHI, JHY-JYI SZE
  • Patent number: 11004880
    Abstract: In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.
    Type: Grant
    Filed: September 16, 2020
    Date of Patent: May 11, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Seiji Takahashi, Chen-Jong Wang, Dun-Nian Yaung, Feng-Chi Hung, Feng-Jia Shiu, Jen-Cheng Liu, Jhy-Jyi Sze, Chun-Wei Chang, Wei-Cheng Hsu, Wei Chuang Wu, Yimin Huang
  • Publication number: 20210074758
    Abstract: The present disclosure relates to a CMOS image sensor having a doped isolation structure separating a photodiode and a pixel device, and an associated method of formation. In some embodiments, the CMOS image sensor has a doped isolation structure separating a photodiode and a pixel device. The photodiode is arranged within the substrate away from a front-side of the substrate. A pixel device is disposed at the front-side of the substrate overlying the photodiode and is separated from the photodiode by the doped isolation structure. Comparing to previous image sensor designs, where an upper portion of the photodiode is commonly arranged at a top surface of a front-side of the substrate, now the photodiode is arranged away from the top surface and leaves more room for pixel devices. Thus, a larger pixel device can be arranged in the sensing pixel, and short channel effect and noise level can be improved.
    Type: Application
    Filed: September 11, 2019
    Publication date: March 11, 2021
    Inventors: Seiji Takahashi, Chen-Jong Wang, Dun-Nian Yaung, Jhy-Jyi Sze, Yimin Huang