Patents by Inventor Seiji Togawa

Seiji Togawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250167022
    Abstract: A substrate standby device configured to allow a substrate to standby is provided. The substrate has a first liquid film adhering to a top surface and a bottom surface thereof. The substrate standby device includes a processing liquid supply configured to supply a processing liquid to the top surface of the substrate; a mass measuring device configured to measure a mass of the substrate; a first imaging device configured to acquire a top surface image; and a controller. The controller performs: forming a second liquid film by supplying a first amount of the processing liquid to the top surface of the substrate; measuring a mass of the second liquid film; acquiring the top surface image; and determining a state of the second liquid film based on the top surface image when the mass of the second liquid film is equal to or greater than a first threshold.
    Type: Application
    Filed: November 15, 2024
    Publication date: May 22, 2025
    Inventors: Keita Hirase, Koji Tanaka, Yuji Kimura, Shota Takei, Masataka Gosho, Seiji Togawa, Kazuaki Kitamura, Yuji Hagishima, Tomoaki Ohara, Atsushi Egashira
  • Patent number: 6576119
    Abstract: The two-stage hydrocracking process of the present invention comprises bringing the first-stage feed oil containing a hydrocarbon component and having a boiling point of 316° C. or higher into contact with the first-stage catalyst in the presence of hydrogen to obtain a first-stage product; separating the first-stage product into heavy component and light component containing the middle distillate products; bringing the second-stage feed oil containing heavy component of the first-stage reaction product into contact with the second-stage catalyst in the presence of hydrogen to obtain the second-stage product; separating the second-stage product into heavy component and light component comprising middle distillate products and recycling part of the heavy component of the second-stage product to the second-stage feed oil. Hydrocracking activity of the first-stage catalyst is higher than hydrocracking activity of the second-stage catalyst.
    Type: Grant
    Filed: February 28, 2001
    Date of Patent: June 10, 2003
    Assignee: Japan Energy Corporation
    Inventors: Katsuaki Ishida, Manabu Kobayashi, Hiroki Koyama, Seiji Togawa, Futoshi Sakaguchi
  • Publication number: 20020008051
    Abstract: The two-stage hydrocracking process of the present invention comprises bringing the first-stage feed oil containing a hydrocarbon component and having a boiling point of 316° C. or higher into contact with the first-stage catalyst in the presence of hydrogen to obtain a first-stage product; separating the first-stage product into heavy component and light component containing the middle distillate products; bringing the second-stage feed oil containing heavy component of the first-stage reaction product into contact with the second-stage catalyst in the presence of hydrogen to obtain the second-stage product; separating the second-stage product into heavy component and light component comprising middle distillate products and recycling part of the heavy component of the second-stage product to the second-stage feed oil. Hydrocracking activity of the first-stage catalyst is higher than hydrocracking activity of the second-stage catalyst.
    Type: Application
    Filed: February 28, 2001
    Publication date: January 24, 2002
    Inventors: Katsuaki Ishida, Manabu Kobayashi, Hiroki Koyama, Seiji Togawa, Futoshi Sakaguchi
  • Patent number: 5716450
    Abstract: In a method of growing a gallium nitride related compound semiconductor crystal on a single crystal substrate, the {011} plane or the {101} plane of rare earth group 13 (3B) perovskite is used as the single crystal substrate. As a result, a gallium nitride group semiconductor crystal excellent in crystallinity can be grown epitaxially.
    Type: Grant
    Filed: December 6, 1995
    Date of Patent: February 10, 1998
    Assignee: Japan Energy Corporation
    Inventors: Seiji Togawa, Hitoshi Okazaki