Abstract: A refining vessel for high-temperature melt includes a refractory for gas blowing nozzle that includes a central refractory embedded with metal tubules, and an outer refractory circumferentially surrounding the central refractory. The refractory for gas blowing nozzle has a horizontal projection on which a minimum radius of an imaginary circle encompassing all the metal tubules embedded in the central refractory is R (mm), wherein the central refractory has an outline that falls between one circle that is concentric with the imaginary circle and has a radius of R+10 mm, and another circle that is concentric with the imaginary circle and has a radius of R+150 mm. The central refractory is formed of a MgO—C refractory having a carbon content of 30 to 80 mass %, and the outer refractory is formed of a MgO—C refractory having a carbon content of 10 to 25 mass %.

Abstract: An FMD including a plurality of FM chips and an FM-CTL equipped with a flash I/F for executing I/O processes to and from the FM chips, wherein the FM-CTL is provided with a flash I/F in correspondence with each of a plurality of channels, and the FM-CTL is configured to: acquire a higher-level operating frequency between a DKC and the FM-CTL; determine an operating frequency of the flash I/F such that a total transfer rate to and from the FM chips produced by the flash I/Fs of the respective channels should be a transfer rate that equals a higher-level transfer rate corresponding to the higher-level operating frequency or a transfer rate that approximates the higher-level transfer rate; and perform a configuration of an operating frequency determined with respect to each of the flash I/Fs.

Abstract: An FMD including a plurality of FM chips and an FM-CTL equipped with a flash I/F for executing I/O processes to and from the FM chips, wherein the FM-CTL is provided with a flash I/F in correspondence with each of a plurality of channels, and the FM-CTL is configured to: acquire a higher-level operating frequency between a DKC and the FM-CTL; determine an operating frequency of the flash I/F such that a total transfer rate to and from the FM chips produced by the flash I/Fs of the respective channels should be a transfer rate that equals a higher-level transfer rate corresponding to the higher-level operating frequency or a transfer rate that approximates the higher-level transfer rate; and perform a configuration of an operating frequency determined with respect to each of the flash I/Fs.