Abstract: In one embodiment, a charged particle beam lithography apparatus includes an irradiator 201 to irradiate substrates with charged particle beams, each of the substrates being provided with a predetermined mark, and a detector 114 to detect charged particles emitted when the predetermined mark is scanned by a charged particle beam and output a detection signal. The apparatus further includes an amplifier 124 to adjust and amplify the detection signal and output an amplified signal, and a measurement circuitry 211 to measure a location of the predetermined mark based on the amplified signal. The apparatus further includes storage 128 to store initial gain values of the amplifier for amplifying the detection signal, the initial gain values corresponding to conditions of the scan. The amplifier amplifies the detection signal based on an initial gain value selected from the initial gain values according to a condition of the scan.

Abstract: In one embodiment, a charged particle beam lithography apparatus includes an irradiator 201 to irradiate substrates with charged particle beams, each of the substrates being provided with a predetermined mark, and a detector 114 to detect charged particles emitted when the predetermined mark is scanned by a charged particle beam and output a detection signal. The apparatus further includes an amplifier 124 to adjust and amplify the detection signal and output an amplified signal, and a measurement circuitry 211 to measure a location of the predetermined mark based on the amplified signal. The apparatus further includes storage 128 to store initial gain values of the amplifier for amplifying the detection signal, the initial gain values corresponding to conditions of the scan. The amplifier amplifies the detection signal based on an initial gain value selected from the initial gain values according to a condition of the scan.

Abstract: A charged particle beam pattern forming apparatus, includes a charge amount distribution calculation unit configured to calculate a charge amount distribution charged by vertical incidence of a charged particle beam on a pattern forming region of a target object; a position correction unit configured to calculate, using the charge amount distribution charged, a corrected position of each pattern forming position corrected for a misregistration amount including a misregistration amount dependent on a deflection position where the charged particle beam is deflected, the misregistration amount caused by an amount of charge; and a pattern generator configured to form a pattern in the corrected position by using the charged particle beam.

Abstract: A charged particle beam writing apparatus includes a charge amount distribution calculation unit configured to calculate a charge amount distribution which is charged by irradiation of a charged particle beam onto a writing region of a target workpiece, by using a charge decay amount and a charge decay time constant both of which depend on a pattern area density, a position displacement amount distribution calculation unit configured to calculate a position displacement amount of each writing position due to charge amounts of the charge amount distribution by performing convolution of each charge amount of the charge amount distribution with a response function, and a writing unit configured to write a pattern on the each writing position where the position displacement amount has been corrected, using a charged particle beam.

Abstract: A pattern density distribution and a dose distribution calculated using the pattern density distribution are multiplied by each other to calculate an exposure distribution. A fogging electron amount distribution is calculated using the exposure distribution and a function descriptive of a fogging spread distribution. Charge amount distributions in irradiation and non-irradiation regions are calculated using the exposure distribution and the fogging electron amount distribution. A position displacement amount distribution is calculated using the charge amount distributions and a response function for converting a charge amount to a position displacement error.

Abstract: A charged particle beam pattern forming apparatus, includes a charge amount distribution calculation unit configured to calculate a charge amount distribution charged by vertical incidence of a charged particle beam on a pattern forming region of a target object; a position correction unit configured to calculate, using the charge amount distribution charged, a corrected position of each pattern forming position corrected for a misregistration amount including a misregistration amount dependent on a deflection position where the charged particle beam is deflected, the misregistration amount caused by an amount of charge; and a pattern generator configured to form a pattern in the corrected position by using the charged particle beam.

Abstract: A pattern writing circuit self-diagnosis method for a charged beam photolithography apparatus and a charged beam photolithography apparatus which enable to maintain normality of the charged beam photolithography apparatus are provided. The pattern writing circuit self-diagnosis method for a charged beam photolithography apparatus is a pattern writing circuit self-diagnosis method for a charged beam photolithography apparatus which irradiates a charged beam on a target sample to write a desired pattern. Layout information and a pattern writing conditions which is prepared in advance are input to the pattern writing circuit, and processing result data of the pattern writing circuit output as a result of the inputting is collected. The collected processing result data of the pattern writing circuit is compared with correct data. The charged beam photolithography apparatus has means which realizes the pattern writing circuit self-diagnosis method.

Abstract: A charged particle beam writing apparatus includes a charge amount distribution calculation unit configured to calculate a charge amount distribution which is charged by irradiation of a charged particle beam onto a writing region of a target workpiece, by using a charge decay amount and a charge decay time constant both of which depend on a pattern area density, a position displacement amount distribution calculation unit configured to calculate a position displacement amount of each writing position due to charge amounts of the charge amount distribution by performing convolution of each charge amount of the charge amount distribution with a response function, and a writing unit configured to write a pattern on the each writing position where the position displacement amount has been corrected, using a charged particle beam.

Abstract: A charged-particle beam pattern writing apparatus includes an electric field intensity calculator unit which operates to calculate an electric field intensity of another region different from a specified region of a workpiece due to electrical charge to be electrified by irradiation of a charged particle beam to the specified region, a correction amount calculator unit which calculates based on the electric field intensity a correction amount for correcting an irradiation position upon irradiation of the charged particle beam to the above-noted another region, and a pattern writing unit which irradiates based on the correction amount the charged particle beam to the another region to thereby write or “draw” a pattern therein.

Abstract: A writing error diagnosis method for a charged beam photolithography apparatus and a charged beam photolithography apparatus which can specify an error cause within a short period of time in occurrence of a pattern writing error are provided. The writing error diagnosis method for a charged beam photolithography apparatus is a writing error diagnosis method for a charged beam photolithography apparatus which irradiates a charged beam on a target object to write a desired pattern. Processing result data of a pattern writing circuit at a position where a pattern writing error occurs is collected after the pattern writing error occurs, and the collected processing result data of the pattern writing circuit is compared with correct data. The charged beam photolithography apparatus has means which realizes the diagnosis method.

Abstract: A pattern density distribution and a dose distribution calculated using the pattern density distribution are multiplied by each other to calculate an exposure distribution. A fogging electron amount distribution is calculated using the exposure distribution and a function descriptive of a fogging spread distribution. Charge amount distributions in irradiation and non-irradiation regions are calculated using the exposure distribution and the fogging electron amount distribution. A position displacement amount distribution is calculated using the charge amount distributions and a response function for converting a charge amount to a position displacement error.

Abstract: A charged-particle beam pattern writing apparatus includes an electric field intensity calculator unit which operates to calculate an electric field intensity of another region different from a specified region of a workpiece due to electrical charge to be electrified by irradiation of a charged particle beam to the specified region, a correction amount calculator unit which calculates based on the electric field intensity a correction amount for correcting an irradiation position upon irradiation of the charged particle beam to the above-noted another region, and a pattern writing unit which irradiates based on the correction amount the charged particle beam to the another region to thereby write or “draw” a pattern therein.

Abstract: A pattern writing circuit self-diagnosis method for a charged beam photolithography apparatus and a charged beam photolithography apparatus which enable to maintain normality of the charged beam photolithography apparatus are provided. The pattern writing circuit self-diagnosis method for a charged beam photolithography apparatus is a pattern writing circuit self-diagnosis method for a charged beam photolithography apparatus which irradiates a charged beam on a target sample to write a desired pattern. Layout information and a pattern writing conditions which is prepared in advance are input to the pattern writing circuit, and processing result data of the pattern writing circuit output as a result of the inputting is collected. The collected processing result data of the pattern writing circuit is compared with correct data. The charged beam photolithography apparatus has means which realizes the pattern writing circuit self-diagnosis method.

Abstract: A writing error diagnosis method for a charged beam photolithography apparatus and a charged beam photolithography apparatus which can specify an error cause within a short period of time in occurrence of a pattern writing error are provided. The writing error diagnosis method for a charged beam photolithography apparatus is a writing error diagnosis method for a charged beam photolithography apparatus which irradiates a charged beam on a target object to write a desired pattern. Processing result data of a pattern writing circuit at a position where a pattern writing error occurs is collected after the pattern writing error occurs, and the collected processing result data of the pattern writing circuit is compared with correct data. The charged beam photolithography apparatus has means which realizes the diagnosis method.