Abstract: A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.

Abstract: An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable.

Abstract: A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.

Abstract: An efficient method for therapeutic treatment of a leukemic patient is disclosed in which the patient's body fluid under external circulation is brought into direct contact with an adsorbent material capable of adsorbing the leukemic cells in the body fluid specifically and selectively. The leukemic cell-adsorbent material, which is used by filling a column to form an adsorbent bed, is a conjugate of a lectin protein extracted from, e.g., Dolichos beans or soybeans coupled with a physiologically inert carrier material such as a polysaccharide in the form of beads or a superparamagnetic material in the form of iron oxide-based magnetic beads.

Abstract: An ESD protection device comprising a field-effect transistor which including a source/drain diffusion layer formed in a semiconductor region, a gate insulating film formed on a channel region between the source/drain diffusion layers, and a gate electrode formed on the gate insulating film. The first silicide layer formed on a region of one portion of the source/drain diffusion layer. A diffusion layer formed in the semiconductor region of a non-forming region of the first silicide layer in the source/drain diffusion layer. A junction depth of the diffusion layer is smaller than that of the source/drain diffusion layer.

Abstract: An efficient method for therapeutic treatment of a leukemic patient is disclosed in which the patient's body fluid under external circulation is brought into direct contact with an adsorbent material capable of adsorbing the leukemic cells in the body fluid specifically and selectively. The leukemic cell-adsorbent material, which is used by filling a column to form an adsorbent bed, is a conjugate of a lectin protein extracted from, e.g., Dolichos beans or soybeans coupled with a physiologically inert carrier material such as a polysaccharide in the form of beads or a superparamagnetic material in the form of iron oxide-based magnetic beads.

Abstract: Disclosed is a method for growth inhibition of human leukemic cells or therapeutic treatment method of a leukemic patient by using a medicament of which the effective ingredient is a methylsulfinylalkyl isothiocyanate such as 4-(methylsulfinyl)butyl isothiocyanate and 6-(methylsulfinyl)hexyl isothiocyanate, which can be prepared by extraction from the tissues of certain plants and can induce apoptosis in human leukemic cells. This medicament compound is little growth-inhibitive against normal cells as compared with leukemic cells, so that a remarkable therapeutic effect can be expected.

Abstract: An efficient method for therapeutic treatment of leukemia is provided in which a patient's body fluid during external circulation is brought into direct contact with an adsorbent material capable of specifically and selectively adsorbing leukemic cells in the body fluid. The leukemic cell-adsorbing material is a composite of a lectin protein coupled with a physiologically inert carrier material such as a galactan polysaccharide in the form of beads. The lectin protein may be obtained from a mushroom fungus such as Agrocybe cylindracea or a leguminous seed such as from the jequirity bean plant. The lectin protein and carrier material can be bound by forming chemical linkages between amino groups in the lectin protein and functional groups in the carrier material, and unreacted functional groups of the carrier material may be blocked with an amino acid. A leukemic cell-adsorbing column may be formed by filling the leukemic cell-adsorbing material into a tubular body to form an adsorbent bed.

Abstract: Disclosed is a method for growth inhibition of human leukemic cells or therapeutic treatment method of a leukemic patient by using a medicament of which the effective ingredient is a methylsulfinylalkyl isothiocyanate such as 4-(methylsulfinyl)butyl isothiocyanate and 6-(methylsulfinyl)hexyl isothiocyanate, which can be prepared by extraction from the tissues of certain plants and can induce apoptosis in human leukemic cells. This medicament compound is little growth-inhibitive against normal cells as compared with leukemic cells, so that a remarkable therapeutic effect can be expected.

Abstract: An evaluation method for a semiconductor device includes the steps of applying a reverse bias voltage between an N-type substrate formed in a surface of the semiconductor device and a P-type region formed in a surface of the N-type substrate to form a depletion layer along the junction therebetween, scanning the surface of the semiconductor device is one direction with a light beam to cause an optical beam induced current to be flow across the junction, and measuring the OBIC intensity profile on a scanning line extending across the depletion layer in the surfaces of the N-type substrate and P-type region. In the method, the light beam has a wavelength whose penetration length is smaller than the depth or thickness of the P-type region, the OBIC intensity profile is integrated over a range corresponding to the depletion layer, and the integrated value is normalized by the reverse bias voltage to determine the surface potential distribution of the semiconductor device.

Abstract: A semiconductor device comprising a high voltage withstanding vertical MOSFET and a low voltage withstanding element both formed on a single chip. A buried layer of a high impurity concentration is formed in a region where the vertical MOSFET is formed, and another buried layer of a high impurity concentration is formed in a region where the low voltage withstanding element is formed. These buried layers have different thickness, whereby the series resistance of a circuit adjacent to the vertical MOSFET is reduced without lowering the withstand voltage of the vertical MOSFET.

Abstract: A method of manufacturing a semiconductor device wherein a pair of grooves having different depths are formed in a surface of a semiconductor substrate, an epitaxial layer of one conductivity type is grown to a depth enough to fill a shallower one of the grooves, and an epitaxial layer of the opposite conductivity type is further grown to a depth enough to fill a deeper one of the grooves, followed by the step of etching the entire surface to expose the surface of said semiconductor substrate and to leave in each groove an epitaxial layer of mutually different conductivity type and having the same depth and width. A semiconductor device as manufactured by the above method.

Abstract: The invention provides an improvement in the disposal of a waste water coining iron-cyanide complexes including ferricyanides by the reduction of the ferricyanide ions into ferrocyanide in the presence of a zinc salt to precipitate the ferrocyanide ions in the form of zinc ferrocyanide. The improvement comprises the use of a sulfite, e.g. sodium sulfite, and a thiosulfate, e.g. sodium thiosulfate, in combination as the reducing agent whereby the reduction of the ferricyanide ions is complete within a relatively short time without being affected by the atmospheric oxygen or other factors.

Abstract: A method for manufacturing a semiconductor device having a high breakdown voltage and a high reliability, comprises (a) forming on a semiconductor substrate an insulating layer having a diffusion window; (b) forming an impurity-doped poly-silicon layer on the insulating layer and on that portion of the semiconductor substrate which is exposed through the diffusion window; (c) forming an undoped poly-silicon layer on the impurity-doped poly-silicon layer; (d) thermally oxidizing the substrate with the insulating layer, impurity-doped poly-silicon layer and undoped poly-silicon layer, thus diffusing the impurity from the impurity-doped poly-silicon layer into the semiconductor substrate through the diffusion window and converting the undoped poly-silicon layer to a silicon oxide layer; (e) forming on the silicon oxide layer an oxidation-resisting mask layer in a desired pattern; and (f) thermally oxidizing the substrate with the insulating layer, impurity-doped poly-silicon layer, silicon oxide layer and mask l