Patents by Inventor Seijiro Umemoto
Seijiro Umemoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20090277377Abstract: The crucible for melting silicon according to the present invention is a crucible for melting silicon including a crucible main body including a heat-resistant member, and a protective film formed at least on an inner surface of the crucible main body, in which the protective film has a composition of SiOXNY in which X>0 and Y>0. The crucible for melting silicon according to the present invention has excellent releasability to a silicon block, reduces the amount of impurities dissolved in a silicon melt, and can be produced at low cost. Furthermore, the present invention provides a release agent for use in the production of the crucible for melting silicon.Type: ApplicationFiled: April 8, 2009Publication date: November 12, 2009Inventors: Tadashi OHASHI, Seijiro UMEMOTO, Go HITOKI
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Patent number: 7504344Abstract: A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.Type: GrantFiled: June 30, 2005Date of Patent: March 17, 2009Assignee: ASM Japan K.K.Inventors: Nobuo Matsuki, Yoshinori Morisada, Seijiro Umemoto, Jea Sik Lee
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Patent number: 7470633Abstract: A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.Type: GrantFiled: September 20, 2006Date of Patent: December 30, 2008Assignee: ASM Japan K.K.Inventors: Nobuo Matsuki, Yoshinori Morisada, Seijiro Umemoto, Jea Sik Lee
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Patent number: 7354873Abstract: A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.Type: GrantFiled: August 18, 2006Date of Patent: April 8, 2008Assignee: ASM Japan K.K.Inventors: Atsuki Fukazawa, Nobuo Matsuki, Seijiro Umemoto
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Publication number: 20070218705Abstract: A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.Type: ApplicationFiled: September 20, 2006Publication date: September 20, 2007Applicant: ASM JAPAN K.K.Inventors: Nobuo Matsuki, Yoshinori Morisada, Seijiro Umemoto, Jea Lee
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Publication number: 20070004204Abstract: A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.Type: ApplicationFiled: August 18, 2006Publication date: January 4, 2007Applicant: ASM JAPAN K.K.Inventors: Atsuki Fukazawa, Nobuo Matsuki, Seijiro Umemoto
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Publication number: 20060258176Abstract: A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.Type: ApplicationFiled: May 19, 2006Publication date: November 16, 2006Applicant: ASM JAPAN K.K.Inventors: Atsuki Fukazawa, Nobuo Matsuki, Seijiro Umemoto
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Publication number: 20060084280Abstract: A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.Type: ApplicationFiled: June 30, 2005Publication date: April 20, 2006Inventors: Nobuo Matsuki, Yoshinori Morisada, Seijiro Umemoto, Jea Lee
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Patent number: 6881683Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.Type: GrantFiled: December 11, 2002Date of Patent: April 19, 2005Assignee: ASM Japan K.K.Inventors: Nobuo Matsuki, Yasuyoshi Hyodo, Masashi Yamaguchi, Yoshinori Morisada, Atsuki Fukazawa, Manabu Kato, Shinya Kaneko, Devendra Kumar, Seijiro Umemoto
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Patent number: 6830007Abstract: A CVD apparatus includes (i) a reaction chamber; (ii) a reaction gas inlet; (iii) a lower stage on which a semiconductor substrate is placed; (iv) an upper electrode for plasma excitation; (v) an intermediate electrode with plural pores through which the reaction gas passes, wherein a reaction space is formed between the upper electrode and the intermediate electrode; and (vi) a cooling plate disposed between the intermediate electrode and the lower stage, wherein a transition space is formed between the intermediate electrode and the cooling plate, and a plasma-free space is formed between the cooling plate and the lower stage.Type: GrantFiled: October 24, 2002Date of Patent: December 14, 2004Assignee: ASM Japan K.K.Inventors: Nobuo Matsuki, Seijiro Umemoto, Yasuyoshi Hyodo
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Patent number: 6784123Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus, and depositing a siloxan polymer film by plasma polymerization at a temperature of −50° C.-100° C. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant such as 2.5.Type: GrantFiled: March 27, 2003Date of Patent: August 31, 2004Assignee: ASM Japan K.K.Inventors: Nobuo Matsuki, Yoshinori Morisada, Yasuyoshi Hyodo, Seijiro Umemoto
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Publication number: 20030224622Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus, and depositing a siloxan polymer film by plasma polymerization at a temperature of -50° C.-100° C. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant such as 2.5.Type: ApplicationFiled: March 27, 2003Publication date: December 4, 2003Applicant: ASM JAPAN K.K.Inventors: Nobuo Matsuki, Yoshinori Morisada, Yasuyoshi Hyodo, Seijiro Umemoto
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Publication number: 20030162408Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a. low dielectric constant.Type: ApplicationFiled: December 11, 2002Publication date: August 28, 2003Applicant: ASM JAPAN K.K.Inventors: Nobuo Matsuki, Yasuyoshi Hyodo, Masashi Yamaguchi, Yoshinori Morisada, Atsuki Fukazawa, Manabu Kato, Shinya Kaneko, Devendra Kumar, Seijiro Umemoto
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Publication number: 20030154921Abstract: A CVD apparatus includes (i) a reaction chamber; (ii) a reaction gas inlet; (iii) a lower stage on which a semiconductor substrate is placed; (iv) an upper electrode for plasma excitation; (v) an intermediate electrode with plural pores through which the reaction gas passes, wherein a reaction space is formed between the upper electrode and the intermediate electrode; and (vi) a cooling plate disposed between the intermediate electrode and the lower stage, wherein a transition space is formed between the intermediate electrode and the cooling plate, and a plasma-free space is formed between the cooling plate and the lower stage.Type: ApplicationFiled: October 24, 2002Publication date: August 21, 2003Inventors: Nobuo Matsuki, Seijiro Umemoto, Yasuyoshi Hyodo
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Patent number: 6537928Abstract: A CVD apparatus includes (i) a reaction chamber; (ii) a reaction gas inlet; (iii) a lower stage on which a semiconductor substrate is placed; (iv) an upper electrode for plasma excitation; (v) an intermediate electrode with plural pores through which the reaction gas passes, wherein a reaction space is formed between the upper electrode and the intermediate electrode; and (vi) a cooling plate disposed between the intermediate electrode and the lower stage, wherein a transition space is formed between the intermediate electrode and the cooling plate, and a plasma-free space is formed between the cooling plate and the lower stage.Type: GrantFiled: February 19, 2002Date of Patent: March 25, 2003Assignee: ASM Japan K.K.Inventors: Nobuo Matsuki, Seijiro Umemoto, Yasuyoshi Hyodo