Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus each capable of improving characteristics without causing processing damage. The solid-state imaging device includes a pixel array unit that includes a plurality of pixels. The pixel array unit includes a color filter layer that includes color filters, a photoelectric conversion layer that includes photoelectric conversion units, an oxide film layer formed between the color filter layer and the photoelectric conversion layer, and a low refractive index wall that includes a material having a lower refractive index than that of the color filters and that is formed between pixels from an end of the color filter layer on the side opposite to the oxide film layer to an intermediate position in the oxide film layer. The present technology is applicable to a CMOS image sensor.

Abstract: [Problems] An injection preparation containing a depsipeptide having a disulfide bond in its molecule, which can be easily prepared, and which is stable, is provided. [Means for Solution] An injection preparation having a long-term stability can be provided by compounding a substance such as ferric chloride, making the solution to have a pH which is not higher than 7.0 and which is not lower than 1.0, and carrying out nitrogen replacement. [Advantages of the Invention] The injection solution of the present invention is expected to provide an injection preparation in which formation of aggregate and cluster of a depsipeptide having a double bond in its molecule is avoided and which is excellent in a storage ability.