Abstract: An opto-electric composite transmission module includes a motherboard and an opto-electric hybrid board. The opto-electric hybrid board includes an optical waveguide and an electric circuit board sequentially in the thickness direction. The optical waveguide includes a core layer, an under-cladding layer, and an over-cladding layer. The core layer includes a mirror. The electric circuit board includes a first terminal and a second terminal. The optical waveguide is disposed so that an opto-electric conversion element, which is electrically connected to the first terminal, can optically be connected to the mirror. The second terminal is electrically connected to the motherboard.

Abstract: An opto-electric hybrid board that sequentially includes an optical waveguide and an electric circuit boardtoward one side in a thickness direction. The electric circuit boardincludes a metal supporting layer, an insulating base layerdisposed on a one-side surface in the thickness direction of the metal supporting layer, a plurality of conductive layers sequentially disposed at one side in the thickness direction, and an intermediate insulating layerdisposed between the conductive layers . At least one layer selected from the group consisting of the metal supporting layer and the conductive layers is electrically insulated from the other layers.

Abstract: An opto-electric hybrid board capable of precisely mounting an optical element in a mirror position of an optical waveguide, there is provided an opto-electric hybrid board including: an electric circuit board having first and second surfaces and including terminals for mounting an optical element on the first surface; and an optical waveguide provided on the second surface of the electric circuit board and including a mirror for optical coupling to the optical element, wherein an alignment mark for identifying the position of an exit surface of light exiting via the mirror of the optical waveguide is formed on the first surface of the electric circuit board.

Abstract: An opto-electric hybrid board that achieves sufficiently lower noise for signal transmission, is less prone to cause warpage during the mounting of various elements, and has high-speed communication properties, an opto-electric hybrid board ? including: an electric circuit board 1; an optical waveguide 2 formed in a stacked manner on a first surface 1a of the electric circuit board 1; and a reinforcement plate 3 for reinforcing the electric circuit board 1, wherein a surface of the optical waveguide 2 on the opposite side from a surface thereof contacting the first surface 1a of the electric circuit board 1 is covered with the reinforcement plate 3.

Abstract: Provided is an optical connector that includes a ferrule and an optical fiber as a plastic optical fiber. The ferrule has a leading end face and a through hole for holding a fiber, the through hole having an opening end in the leading end face. The optical fiber has a leading end. The leading end of the optical fiber is inserted in the through hole and located at a retraction position retracted from the leading end face.

Abstract: An opto-electric composite transmission module includes a printed wiring board, an electrical connector provided on the printed wiring board, and an opto-electric hybrid board which is electrically connected to the printed wiring board via the electrical connector. The opto-electric hybrid board has a long shape. The opto-electric hybrid board includes an opto-electric conversion portion including a flexible wiring board, a metal support layer, and an optical waveguide film in order in a thickness direction, and an electrical connection portion disposed in one end portion in a longitudinal direction of the opto-electric hybrid board and including the flexible wiring board, and the metal support layer and/or the optical waveguide film. The electrical connection portion is inserted into the electrical connector.

Abstract: A compound solar cell having a higher conversion efficiency and a method for producing the compound solar cell at lower costs are provided. The compound solar cell includes a CIGS light absorbing layer, a buffer layer and a front side electrode layer provided on a substrate. An interface layer made of a mixed crystal compound having a composition represented by the following general formula is provided between the CIGS light absorbing layer and the buffer layer: Zn(Ox,S1-x) . . . (1), wherein X is 0.9<X?1.

Abstract: In order to provide a CIGS compound solar cell with a high conversion efficiency, a CIGS compound solar cell including a rear electrode layer, a CIGS light absorbing layer, a buffer layer, and a transparent electrode layer in this order over a substrate is configured such that the buffer layer comprises a mixed crystal of a Group IIa metal and zinc oxide, and characteristics of the mixed crystal as shown by X-ray diffraction satisfy the following formula (1): 0.5?A/(A+B+C)<1??(1) (where none of A, B, C are 0) A: peak intensity at plane (002) B: peak intensity at plane (100) C: peak intensity at plane (101).

Abstract: The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film.

Abstract: A CIGS type compound solar cell excellent in both productivity and conversion efficiency is provided. The CIGS type solar cell includes a CIGS light absorbing layer, a buffer layer and a transparent electrode layer provided in this order on a substrate. The buffer layer is made of a mixed crystal compound containing ZnO, MgO and ZnS being present at specific ranges respectively.

Abstract: The present invention provides a CIGS film production method which ensures that a CIGS film excellent in conversion efficiency can be produced at lower costs with higher reproducibility, and a CIGS solar cell production method using the CIGS film production method. The CIGS film production method includes: a stacking step of stacking an (A) layer containing indium, gallium and selenium and a (B) layer containing copper and selenium in this order in a solid phase over a substrate while heating at a temperature of higher than 250° C. and not higher than 400° C.; and a heating step of further heating the resulting stack of the (A) layer and the (B) layer to melt a compound of copper and selenium in the (B) layer into a liquid phase, whereby copper is diffused from the (B) layer into the (A) layer to cause crystal growth to provide a CIGS film.

Abstract: A CIGS type compound solar cell excellent in both productivity and conversion efficiency is provided. The CIGS type solar cell includes a CIGS light absorbing layer, a buffer layer and a transparent electrode layer provided in this order on a substrate. The buffer layer is made of a mixed crystal compound containing ZnO, MgO and ZnS being present at specific ranges respectively.

Abstract: The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium, in this order in a solid phase over a substrate; and a heating step of heating the resulting stack of the layer (A) and the layer (B) to melt the layer (B) into a liquid phase, whereby copper is diffused from the layer (B) into the layer (A) to cause crystal growth; wherein the layer (A) is formed by repeatedly stacking a gallium selenide film (Y) and an indium selenide film (X) in this order and reducing a thickness ratio (Y/X) between the gallium selenide film (Y) and the indium selenide film (X) as the stacking is repeated.

Abstract: The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film.

Abstract: A CIGS film production method capable of suppressing oxidation of a front surface of a CIGS film, and a CIGS solar cell production method using the CIGS film production method includes the steps of: forming a first region having a Ga/(In+Ga) ratio progressively reduced as the thickness of the first region increases to a predetermined first thickness position from a back surface of the CIGS film; forming a second region having a Ga/(In+Ga) ratio progressively increased as the thickness of the second region increases to a predetermined second thickness position from the first region; and forming a third region on the second region by vapor-depositing Se and In, the third region having a Ga/(In+Ga) ratio progressively reduced toward a front surface of the CIGS film.

Abstract: A compound solar cell having a higher conversion efficiency and a method for producing the compound solar cell at lower costs are provided. The compound solar cell includes a CIGS light absorbing layer, a buffer layer and a front side electrode layer provided on a substrate. An interface layer made of a mixed crystal compound having a composition represented by the following general formula is provided between the CIGS light absorbing layer and the buffer layer: Zn(Ox,S1-x) . . . (1), wherein X is 0.9<X?1.

Abstract: In order to provide a method that can manufacture a compound solar cell with a high conversion efficiency at low cost, a buffer layer is formed by a sputtering method with the use of a high-frequency RF power source or a high-frequency RF power source and a direct-current (DC) power source in combination, while two cathode targets for sputtering are arranged to be opposed to each other on both sides of an imaginary central axis assumed to extend perpendicularly from a surface of a substrate over with a CIGS light absorbing layer is stacked.

Abstract: A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film.

Abstract: In order to provide a CIGS compound solar cell with a high conversion efficiency, a CIGS compound solar cell including a rear electrode layer, a CIGS light absorbing layer, a buffer layer, and a transparent electrode layer in this order over a substrate is configured such that the buffer layer comprises a mixed crystal of a Group IIa metal and zinc oxide, and characteristics of the mixed crystal as shown by X-ray diffraction satisfy the following formula (1): 0.5?A/(A+B+C)<1 ??(1) (where none of A, B, C are 0) A: peak intensity at plane (002) B: peak intensity at plane (100) C: peak intensity at plane (101).

Abstract: A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film.