Patents by Inventor Seikichi Akiyama

Seikichi Akiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5264154
    Abstract: A single crystal scintillator and apparatus for prospecting underground strata using the scintillator is described. The single crystal scintillator is a cerium doped gadolinium silicate compound of the formula:Gd.sub.2-(x+y) Ln.sub.x Ce.sub.y SiO.sub.5wherein Ln is Sc, Tb, Lu, Dy, Ho, Er, Tm, or Yb; 0.03.ltoreq.x.ltoreq.1.9; and 0.001.ltoreq.y.ltoreq.0.2.
    Type: Grant
    Filed: March 11, 1993
    Date of Patent: November 23, 1993
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Seikichi Akiyama, Hiroyuki Ishibashi, Takeshi Utsu, Charles L. Melcher, Jeffrey S. Schweitzer
  • Patent number: 4687683
    Abstract: A scintillator for radiation detection obtained by coating a light reflective material in a thickness of 50 to 150 .mu.m by a screen printing method on the surface of a solid scintillator material substrate is excellent in uniformity, dimensional accuracy with high light output. When the light reflective material layer is covered with a synthetic resin film, adhesive strength of the light reflective material layer to the substrate is increased remarkably.
    Type: Grant
    Filed: August 14, 1984
    Date of Patent: August 18, 1987
    Assignee: Hitachi Chemical Co. Ltd.
    Inventors: Mitsuru Ishii, Seikichi Akiyama, Hiroyuki Ishibashi
  • Patent number: 4543485
    Abstract: A scintillator for radiation detection obtained by coating a light reflective material in a thickness of 50 to 150 .mu.m by a screen printing method on the surface of a solid scintillator material substrate is excellent in uniformity, dimensional accuracy with high light output. When the light reflective material layer is covered with a synthetic resin film, adhesive strength of the light reflective material layer to the substrate is increased remarkably.
    Type: Grant
    Filed: November 19, 1982
    Date of Patent: September 24, 1985
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Mitsuru Ishii, Seikichi Akiyama, Hiroshi Ishibashi
  • Patent number: 3993534
    Abstract: A method of producing the single crystals of the gadolinium molybdate family having a high transmission and low threshold field, comprising the step of growing a single crystal from a melt of the gadolinium molybdate family by a crystal pulling technique, the step of cooling slowly the single crystal in a temperature range of from immediately below a melting point to a segregation temperature of .alpha. phase of the single crystal and the further step of cooling under such cooling conditions that the .alpha. phase is not segregated and the value of the threshold field of the single crystal is not made large in a temperature range of below the segregation temperature of the .alpha. phase.
    Type: Grant
    Filed: January 3, 1975
    Date of Patent: November 23, 1976
    Assignee: Hitachi, Ltd.
    Inventors: Kazuyuki Nagatuma, Seikichi Akiyama, Hirotugu Kozuka, Masayoshi Kobayashi