Abstract: Long-term reliability of a liquid ejection head substrate and a liquid ejection head is improved by suppressing dissolution of an intermediate layer due to anodization. A liquid ejection head substrate including: a flow passage forming member having an ejection orifice and a flow passage; a heating resistance element for ejecting a liquid; an insulating layer covering the heating resistance element; a protecting layer whose surface is exposed to the flow passage; and an intermediate layer provided between the flow passage forming member and the protecting layer, in which the intermediate layer contains a material represented by a following composition formula (I): Siw1Ox1Cy1 (I), 39?w1?62 (at. %), 32?x1?55 (at. %), and 6?y1?29 (at. %), and w1+x1+y1=100 (at %).

Abstract: A liquid ejection head circuit board including a substrate, a heat generating resistance element that generates heat energy used for ejection of liquid, an electric wiring layer that is electrically connected to the heat generating resistance element, and an insulating film that insulates the electric wiring layer. The insulating film includes a first insulating film and a second insulating film on the first insulating film, the first insulating film is a first SiOCN film, and the second insulating film is a second SiOCN film containing more carbon than the first SiOCN film or a low-density insulating film with a lower density than the first SiOCN film.

Abstract: Provided is a method for manufacturing a liquid ejection head substrate and a method for manufacturing a liquid ejection head capable of reducing degradation of the quality of a printed image. To this end, in formation of a liquid ejection head substrate, a part required to have more precise relative positional relation or not required to have high fabrication precision is set as a first part, and for the first part, a single-shot exposure method is employed. Also, a part required to have higher fabrication precision is set as a second part, and for the second part, a split exposure method is employed.

Abstract: Long-term reliability of a liquid ejection head substrate and a liquid ejection head is improved by suppressing dissolution of an intermediate layer due to anodization. A liquid ejection head substrate including: a flow passage forming member having an ejection orifice and a flow passage; a heating resistance element for ejecting a liquid; an insulating layer covering the heating resistance element; a protecting layer whose surface is exposed to the flow passage; and an intermediate layer provided between the flow passage forming member and the protecting layer, in which the intermediate layer contains a material represented by a following composition formula (I): Siw1Ox1Cy1 (I), 39?w1?62 (at. %), 32?x1?55 (at. %), and 6?y1?29 (at. %), and w1+x1+y1=100 (at %).

Abstract: A liquid ejection head circuit board including a substrate, a heat generating resistance element that generates heat energy used for ejection of liquid, an electric wiring layer that is electrically connected to the heat generating resistance element, and an insulating film that insulates the electric wiring layer. The insulating film includes a first insulating film and a second insulating film on the first insulating film, the first insulating film is a first SiOCN film, and the second insulating film is a second SiOCN film containing more carbon than the first SiOCN film or a low-density insulating film with a lower density than the first SiOCN film.

Abstract: A liquid ejection head including an orifice plate including an ejection orifice, an element substrate including an energy-generating element, and a flow path wall member for formation of a flow path, the flow path wall member being disposed between the element substrate and the orifice plate, wherein the orifice plate includes a first surface and a second surface which is opposite to the first surface and which is disposed facing the element substrate, the first surface includes a first diamond-like carbon film, respective contact angles ?1 and ?2 to pure water, of the first surface and the second surface, satisfy a relationship of Expression 1 defined in the specification, and composition in the first surface of the first diamond-like carbon film satisfies all relationships of Expression 2 to Expression 5 defined in the specification.

Abstract: A liquid ejection head including an orifice plate including an ejection orifice, an element substrate including an energy-generating element, and a flow path wall member for formation of a flow path, the flow path wall member being disposed between the element substrate and the orifice plate, wherein the orifice plate includes a first surface and a second surface which is opposite to the first surface and which is disposed facing the element substrate, the first surface includes a first diamond-like carbon film, respective contact angles ?1 and ?2 to pure water, of the first surface and the second surface, satisfy a relationship of Expression 1 defined in the specification, and composition in the first surface of the first diamond-like carbon film satisfies all relationships of Expression 2 to Expression 5 defined in the specification.

Abstract: A liquid ejection head substrate that includes a nozzle plate provided with an ejection orifice adapted to eject liquid droplets, in which a projection/depression pattern is provided on a liquid droplet ejection surface of the nozzle plate, the projection/depression pattern being made up of a plurality of projections and depressions, the projections being separated by depressions 1 ?m or less in depth and disposed at predetermined spacing 10 ?m or less in length; and the projection/depression pattern includes a part having water repellency due to lotus effect.

Abstract: A method of forming a through-substrate having a first surface and a second surface opposite to the first surface, the method causing the first surface to communicate with the second surface through the substrate, the method including: a first step that forms a first trench from the first surface side of the substrate using dry etching, the first trench having side surfaces on which protective film is formed; and a second step that forms a second trench from the second surface side using dry etching, the second trench communicating with the first trench having the side surfaces on which the protective film is formed.

Abstract: A substrate processing method includes forming a first hole in a first surface of a silicon substrate to have a depth that it does not extend through the substrate and forming a second hole in a second surface to make the second hole to communicate with the first hole, so that a through hole formed of the first and second holes is formed in the substrate. The process of forming the second hole includes forming a communication portion wider than an opening of the first hole between the first and second holes after the second hole has been made to communicate with the first hole by dry etching.

Abstract: A method for processing a silicon substrate, comprising the steps of providing a silicon substrate having a first surface and a second surface, forming a non-penetrated hole extending from the first surface toward the second surface side in the silicon substrate, sticking a sealing tape comprising a support member and an adhesive layer on the first surface and filling at least part of the non-penetrated hole with the adhesive layer, performing reactive ion etching from the second surface toward the first surface side to allow the reactive ion etching to reach the adhesive layer filled in the non-penetrated hole and to expose the adhesive layer, and peeling the sealing tape from the silicon substrate to form a through hole in the silicon substrate.

Abstract: A substrate processing method for forming a through-hole in a substrate by reactive ion etching includes preparing a substrate that has a first surface and a second surface and on the first surface side of which a first layer and a second layer are disposed, the second surface being on the opposite side to the first surface, the second layer covering the first layer; and performing reactive ion etching on the substrate from the second surface to form a through-hole extending through the substrate from the first surface to the second surface, the reactive ion etching being performed to reach the first layer. The etching rate of the second layer for the reactive ion etching is lower than that of the first layer.

Abstract: A method of forming a through-substrate having a first surface and a second surface opposite to the first surface, the method causing the first surface to communicate with the second surface through the substrate, the method including: a first step that forms a first trench from the first surface side of the substrate using dry etching, the first trench having side surfaces on which protective film is formed; and a second step that forms a second trench from the second surface side using dry etching, the second trench communicating with the first trench having the side surfaces on which the protective film is formed.

Abstract: A substrate processing method includes forming a first hole in a first surface of a silicon substrate to have a depth that it does not extend through the substrate and forming a second hole in a second surface to make the second hole to communicate with the first hole, so that a through hole formed of the first and second holes is formed in the substrate. The process of forming the second hole includes forming a communication portion wider than an opening of the first hole between the first and second holes after the second hole has been made to communicate with the first hole by dry etching.

Abstract: A liquid ejection head including a substrate having an ejection-energy-generating element for generating energy for ejecting a liquid; an orifice plate including at least an ejection-orifice-forming wall that constitutes an ejection orifice for ejecting the liquid and an upper wall of a liquid chamber communicating with the ejection orifice, and a liquid chamber side wall that constitutes a side wall of the liquid chamber. The orifice plate is formed of an inorganic material. The liquid ejection head includes a plurality of liquid chambers; and an elastic member filled into a depressed portion formed between the liquid chamber side wall of one liquid chamber of the liquid chambers adjacent to each other and the liquid chamber side wall of the other liquid chamber. The upper end of the elastic member is arranged in a position higher than an upper face of the ejection-orifice-forming wall.

Abstract: A liquid discharge head has a substrate, an energy generating element which generates energy for discharging liquid, and an orifice plate in which a discharge orifice which discharges liquid is formed, in which the orifice plate contains silicon and carbon and when the content ratio of the silicon is defined as X (atom %) and the content ratio of the carbon is defined as Y (atom %), Y/X is 0.001 or more.

Abstract: A liquid ejection head including a substrate having an ejection-energy-generating element for generating energy for ejecting a liquid; an orifice plate including at least an ejection-orifice-forming wall that constitutes an ejection orifice for ejecting the liquid and an upper wall of a liquid chamber communicating with the ejection orifice, and a liquid chamber side wall that constitutes a side wall of the liquid chamber. The orifice plate is formed of an inorganic material. The liquid ejection head includes a plurality of liquid chambers; and an elastic member filled into a depressed portion formed between the liquid chamber side wall of one liquid chamber of the liquid chambers adjacent to each other and the liquid chamber side wall of the other liquid chamber. The upper end of the elastic member is arranged in a position higher than an upper face of the ejection-orifice-forming wall.

Abstract: A method for processing a silicon substrate, comprising the steps of providing a silicon substrate having a first surface and a second surface, forming a non-penetrated hole extending from the first surface toward the second surface side in the silicon substrate, sticking a sealing tape comprising a support member and an adhesive layer on the first surface and filling at least part of the non-penetrated hole with the adhesive layer, performing reactive ion etching from the second surface toward the first surface side to allow the reactive ion etching to reach the adhesive layer filled in the non-penetrated hole and to expose the adhesive layer, and peeling the sealing tape from the silicon substrate to form a through hole in the silicon substrate.

Abstract: A substrate processing method for forming a through-hole in a substrate by reactive ion etching includes preparing a substrate that has a first surface and a second surface and on the first surface side of which a first layer and a second layer are disposed, the second surface being on the opposite side to the first surface, the second layer covering the first layer; and performing reactive ion etching on the substrate from the second surface to form a through-hole extending through the substrate from the first surface to the second surface, the reactive ion etching being performed to reach the first layer. The etching rate of the second layer for the reactive ion etching is lower than that of the first layer.

Abstract: A substrate processing method including the steps of disposing a substrate having a recess in such a manner that the face having the recess is upward in the gravity direction, and applying a resist to the recess and face having the recess to form a resist film thereon, and disposing the substrate having the resist film formed thereon in such a manner that the face having the recess is downward in the gravity direction, and applying a liquid capable of dissolving the resist to the resist film to adjust the thickness of the resist film. A method for manufacturing a liquid ejection head is also provided.