Abstract: Disclosed is a scanning electron microscope provided with a calculation device (403) for measuring the dimension of a pattern on a sample (413), characterized in that the amount of change of a pattern shape, caused by electron beam irradiation, is calculated and stored, and a pattern shape contour (614; 815; 1512) before the sample is irradiated with an electron beam is restored from a pattern shape contour (613; 814; 1511) in a scanning electron microscope image (612; 813; 1510) after the sample is irradiated with an electron beam using the calculated amount and, then, the pattern shape contour (614; 815; 1512) is displayed. Thus, the shrinking of a resist and/or the effect of electrostatic charge caused when a sample is irradiated with an electron beam are eliminated, so that the shape contour of a two-dimensional pattern before irradiating an electron beam can be restored with a high degree of accuracy, and the dimension of a pattern can be measured with a high degree of accuracy, using the restored image.

Abstract: Disclosed is a scanning electron microscope provided with a calculation device (403) for measuring the dimension of a pattern on a sample (413), characterized in that the amount of change of a pattern shape, caused by electron beam irradiation, is calculated and stored, and a pattern shape contour (614; 815; 1512) before the sample is irradiated with an electron beam is restored from a pattern shape contour (613; 814; 1511) in a scanning electron microscope image (612; 813; 1510) after the sample is irradiated with an electron beam using the calculated amount and, then, the pattern shape contour (614; 815; 1512) is displayed. Thus, the shrinking of a resist and/or the effect of electrostatic charge caused when a sample is irradiated with an electron beam are eliminated, so that the shape contour of a two-dimensional pattern before irradiating an electron beam can be restored with a high degree of accuracy, and the dimension of a pattern can be measured with a high degree of accuracy, using the restored image.

Abstract: Provided is a sample observing method wherein the effect on throughput is minimized, and a pattern profile can be obtained at high accuracy even in a complicated LSI pattern, regardless of the scanning direction of an electron beam. In the sample observing method, the presence or absence of an edge parallel to a scanning direction (707) of an electron beam is judged regarding an edge (708) of a pattern to be observed (S702); if the edge is present, an area in the vicinity of the pattern edge is designated as a local pre-dose area (709) (S703); a local pre-dose of an electron beam is performed, so that the initial charged state is controlled not to return secondary electrons generated by irradiation of an electron beam when an image is captured, to the surface of a sample.

Abstract: Provided is a sample observing method wherein the effect on throughput is minimized, and a pattern profile can be obtained at high accuracy even in a complicated LSI pattern, regardless of the scanning direction of an electron beam. In the sample observing method, the presence or absence of an edge parallel to a scanning direction (707) of an electron beam is judged regarding an edge (708) of a pattern to be observed (S702); if the edge is present, an area in the vicinity of the pattern edge is designated as a local pre-dose area (709) (S703); a local pre-dose of an electron beam is performed, so that the initial charged state is controlled not to return secondary electrons generated by irradiation of an electron beam when an image is captured, to the surface of a sample.

Abstract: A charged particle beam device including a function for measuring localized static charges on a sample. A primary charged particle beam scans a sample positioned in a mirror state to acquire an image. The acquired image may be an image of the sample or may be an image of a structural component in the charged particle optical system. The acquired image is compared with a standard sample image and the localized static charge is measured.

Abstract: A charged particle beam device including a function for measuring localized static charges on a sample. A primary charged particle beam scans a sample positioned in a mirror state to acquire an image. The acquired image may be an image of the sample or may be an image of a structural component in the charged particle optical system. The acquired image is compared with a standard sample image and the localized static charge is measured.

Abstract: Pattern inspection and measurement technique where the failure of the detection of a secondary signal due to the variation of an optical condition of a primary electron beam or the occurrence of an electric field perpendicular to a traveling direction of the primary electron beam in a surface of a wafer is minimized, an SEM image the SN ratio of which is high and which hardly has shading in a field of view can be acquired and measurement such as measuring the dimensions and configuration of a measured object and inspecting a defect is enabled at high precision and high repeatability. A lens for converging a secondary signal is installed in a position which a traveling direction of the primary electron beam crosses or on a course of the secondary signal spatially separated from the primary electron beam by Wien filter.