Abstract: A capacitive type semiconductor accelerometer has an intermediate silicon plate of n type conductivity including a movable electrode constituting a pendulum mass formed within the intermediate silicon plate and supported thereby via a beam so as to permit movement in a direction perpendicular to its plane. A first conductive island is formed within the intermediate plate and is immovably supported thereby via a first insulating leg so as to be isolated therefrom, and an upper glass plate is anodic bonded to the intermediate silicon plate. A first stationary electrode is formed on the upper glass plate at the position facing one face of the movable electrode with a predetermined gap. A lower glass plate is anodic bonded to the intermediate silicon plate and a second stationary electrode is formed on the lower glass plate at the position facing the other face of the movable electrode with a predetermined gap.

Abstract: Disclosed is an acceleration detector which has an electrically conductive mass portion formed at a free end of a cantilever, and fixed electrodes arranged opposite to the mass portion through a gap so that the value of acceleration is detected on the basis of the change of capacitance between the mass portion and the fixed electrodes, and in which at least one space is formed in the inside of the mass portion to lighten the weight of the mass portion to thereby widen the range of measurement.

Abstract: A detector for detecting a physical quantity as a quantity of electricity has a detection portion, a portion for stimulating the detection portion and a signal processing portion, wherein a calibrating signal is supplied from the signal processing portion to the detection portion via the stimulating portion so as to measure a specific response of the detection portion whereby a self-calibration and a correction of the characteristics are performed in accordance with the amount of the change in the response.

Abstract: A capacitance type accelerometer, having a fist silicon plate formed a movable electrode which is moved according to acceleration, two second silicon plates which are disposed on both sides of the first silicon plate with a certain separation distance, and thermal oxide films which are respectively disposed between the first silicon plate except the movable electrode and the two second silicon plates and stick the first silicon plate except the movable electrode and the two second silicon plates together. And further, a capacitance type accelerometer, having, a silicon plate forming a movable electrode which is moved according to acceleration, glass plates respectively mounting a conductive layer thereon which are opposite to the silicon plate with a certain separation distance and are connected to both sides of the silicon plate except the movable electrode and lead wires which are respectively connected to the conductive layers through a groove formed between the silicon plate and the glass plates.

Abstract: An air-fuel ratio in the lean range is detected by measuring a limiting current when oxygen diffused to a first electrode is pumped to a second electrode via a solid electrolyte. A stoichiometric air-fuel ratio is detected from electromotive force between first and third electrodes when oxygen is pumped from the first electrode to the third electrode. The invention is characterized by use of such three electrodes. Furthermore, an air-fuel ratio in a rich range is detected by either sending oxygen from the first electrode to the third electrode via the solid electrolyte and measuring a current when the electromotive force between the first and third electrodes is controlled to be constant, or measuring a current when the air-fuel ratio range is judged as "rich" from this electromotive force and the polarity of the impressed voltage at the time of lean detection is reversed.

Abstract: An A/F sensor for an automobile comprises means for providing an electrical potential higher than ground on the sensing electrode such that the sensor is able to detect air-fuel ratios over the entire spectrum of such ratios from lean through rich.

Abstract: A semiconductor strain gauge is arranged as a bridge having four piezoresistive elements which each include a low impurity concentration diffused portion and a heavily-doped diffused portion. The resistance values of the two low impurity concentration diffused portions opposite each other in the bridge are greater than the resistance values of the other two lower impurity concentration portions. The resistances of the heavily-doped diffused portion are selected so that the resistance of the piezoresistive elements are equal. However, by virtue of the fact that the resistance temperature coefficient of the low impurity portions are greater than the resistance temperature coefficients of the high impurity portions, the overall resistance temperature coefficients of the bridge arms will be different. This permits the zero-point voltage of the bridge to always increase with an increase in temperature.

Abstract: A semiconductor absolute pressure transducer assembly has a silicon diaphragm assembly and a covering member. The silicon diaphragm assembly has a circular pressure sensitive diaphragm, on the surface of which are diffused piezoresistors and conducting paths. The covering member composed of borosilicate glass has a circular well formed therein. On the surface of the silicon diaphragm assembly on which the piezoresistors and the conducting paths are diffused, a passivating layer of silicon dioxide is deposited. Further on the passivating layer, a conductive layer is formed by, for example, evaporating silicon. And the glass covering member is bonded on the silicon diaphragm assembly by anodic bonding. Namely, the silicon diaphragm assembly and the glass covering member are heated up to a certain high temperature and a relative high voltage applied across the conductive layer of the silicon diaphragm assembly and the glass covering members.

Abstract: A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrically connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide are formed in uniform thickness, and further on a surface of the passivating layer is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly.

Abstract: An electronic fuel feed system wherein pulses generated in synchronism with the revolutions of an engine are multiplied by N, the suction air of the engine is measured by a swirl-type air flow meter, the pulses increased N times as fall within a pulse of the air flow meter are counted, and the quantity of fuel supply is calculated from the inverse number of the count value.

Abstract: A temperature responsive apparatus includes a thermocouple producing a thermoelectric e.m.f. depending on the temperature difference between a temperature to be detected and a circumferential temperature and a first winding supplied with current from the thermocouple to generate a first magnetic field. A second winding is connected to a voltage source to generate a second magnetic field in the opposite direction to that generated by the first winding and a reed switch is positioned in the total magnetic field generated by the first and the second windings so as to respond to the intensity of the total magnetic field to make and break its contacts. A diode is also connected to the voltage source, and the second winding is always excited in accordance with the voltage drop across the diode to maintain said second magnetic field.

Abstract: A pressure responsive switch performing switching operation for converting pressure variations into electric variations is disclosed in which the actuating pressure of a snap switching member is adjusted by changing the contact pressure between a pressure applied member and the snap switching member which is in contact with the pressure-applied member. The gap between the break contact of the pressure responsive switch is adjusted thereby to adjust the difference between the pressure between the make contact of the switch when it is closed and the pressure between the break contact of the same when it is closed.