Patents by Inventor Seisuke Nigo

Seisuke Nigo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thermoelectric generation cell and thermoelectric generation module
    Patent number: 11393969
    Abstract: [Object] To provide a thermoelectric generation cell using a safe and inexpensive general-purpose thermoelectric material.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: July 19, 2022
    Assignee: National Institute for Materials Science
    Inventors: Seisuke Nigo, Terumi Nakamura, Susumu Meguro, Seiichi Kato
  • THERMOELECTRIC GENERATION CELL AND THERMOELECTRIC GENERATION MODULE
    Publication number: 20210202817
    Abstract: [Object] To provide a thermoelectric generation cell using a safe and inexpensive general-purpose thermoelectric material.
    Type: Application
    Filed: February 27, 2018
    Publication date: July 1, 2021
    Inventors: Seisuke NIGO, Terumi NAKAMURA, Susumu MEGURO, Seiichi KATO
  • RESISTANCE CHANGE MEMORY ELEMENT
    Publication number: 20150171319
    Abstract: Provided is a resistive-switching memory device that includes: a resistive-switching insulating film; a source electrode arranged on a first main surface of the resistive-switching insulating film; a drain electrode arranged on the first main surface; and a gate electrode arranged on a second main surface of the resistive-switching insulating film, the second main surface being opposite to the first main surface.
    Type: Application
    Filed: August 11, 2013
    Publication date: June 18, 2015
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Seisuke Nigo, Mitsunori Katsu, Masayuki Sato, Yuichi Sasajima
  • Nonvolatile Memory
    Publication number: 20080197440
    Abstract: To provide a nonvolatile memory which realizes nonvolatile characteristic similar to a flash memory and a high-speed access equivalent to SRAM, has an integration degree exceeding that of DRAM, requires low voltage and low power consumption, and can be driven by a small-size battery, there are provided: (1) a non-volatile memory, including: a pair of metal electrodes; and a nano-hole-containing metal oxide film having a film thickness of 0.
    Type: Application
    Filed: June 2, 2005
    Publication date: August 21, 2008
    Applicant: MISUZU R & D LTD.
    Inventors: Seisuke Nigo, Takayuki Ohnishi