Patents by Inventor Seita Iwahashi
Seita Iwahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240063164Abstract: The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10?6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.Type: ApplicationFiled: October 27, 2023Publication date: February 22, 2024Inventors: Takukazu OTSUKA, Seita IWAHASHI, Maiko HATANO, Ryuta WATANABE, Katsuhiko YOSHIHARA
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Patent number: 11848295Abstract: The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10?6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.Type: GrantFiled: March 2, 2022Date of Patent: December 19, 2023Assignee: ROHM CO., LTD.Inventors: Takukazu Otsuka, Seita Iwahashi, Maiko Hatano, Ryuta Watanabe, Katsuhiko Yoshihara
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Publication number: 20220397780Abstract: A phase shifter includes a substrate, waveguides and a wiring portion. The substrate includes optical waveguide regions and contact regions. Each contact region has contact portions. The waveguides are disposed at the substrate, and each of the waveguides accumulates carriers to modulate a phase of light for guiding propagation of the light. The wiring portion electrically connects each of the waveguides and each of the contact portions. Each of the contact portions connecting each of the waveguides to a corresponding one of electrodes to inject the carriers into each of the waveguides. Each of the waveguides has a lengthwise direction defined as a first direction, and a direction that is perpendicular to the first direction and is parallel to a surface of the substrate is defined as a second direction. The optical waveguide regions and the contact regions are disposed to be alternately aligned along the second direction.Type: ApplicationFiled: May 31, 2022Publication date: December 15, 2022Inventor: SEITA IWAHASHI
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Patent number: 11489457Abstract: A semiconductor module may include a plurality of semiconductor elements; and a first power terminal, a second power terminal and a third power terminal electrically connected to the plurality of semiconductor elements. The plurality of semiconductor elements may include at least one upper arm switching element electrically connected between the first power terminal and the second power terminal; and at least one lower arm switching element electrically connected between the second power terminal and the third power terminal. A number of the at least one upper arm switching element may be different from a number of the at least one lower arm switching element.Type: GrantFiled: February 3, 2020Date of Patent: November 1, 2022Assignee: DENSO CORPORATIONInventors: Shingo Tsuchimochi, Seita Iwahashi
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Publication number: 20220189904Abstract: The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10?6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.Type: ApplicationFiled: March 2, 2022Publication date: June 16, 2022Inventors: Takukazu OTSUKA, Seita IWAHASHI, Maiko HATANO, Ryuta WATANABE, Katsuhiko YOSHIHARA
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Patent number: 11302665Abstract: The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10?6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.Type: GrantFiled: November 6, 2019Date of Patent: April 12, 2022Assignee: ROHM CO., LTD.Inventors: Takukazu Otsuka, Seita Iwahashi, Maiko Hatano, Ryuta Watanabe, Katsuhiko Yoshihara
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Publication number: 20200266727Abstract: A semiconductor module may include a plurality of semiconductor elements; and a first power terminal, a second power terminal and a third power terminal electrically connected to the plurality of semiconductor elements. The plurality of semiconductor elements may include at least one upper arm switching element electrically connected between the first power terminal and the second power terminal; and at least one lower arm switching element electrically connected between the second power terminal and the third power terminal. A number of the at least one upper arm switching element may be different from a number of the at least one lower arm switching element.Type: ApplicationFiled: February 3, 2020Publication date: August 20, 2020Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Shingo TSUCHIMOCHI, Seita IWAHASHI
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Patent number: 10748826Abstract: The power module includes: a first metallic pattern; a plurality of power devices bonded on the first metallic pattern, each of the plurality of the power devices has a thickness thinner than a thickness of the metallic pattern; a frame member disposed so as to collectively enclose a predetermined number of the power devices on the first metallic pattern; a second metallic pattern disposed outside the frame member; and a resin layer configured to seal the plurality of the power devices and the first and second metallic patterns so as to include the frame member, wherein the frame member suppresses a stress according to a difference between a coefficient of thermal expansion of the metallic pattern and a coefficient of thermal expansion of the power devices. There is provided the power module easy to be fabricated, capable of suppressing the degradation of the bonded portion and improving reliability.Type: GrantFiled: April 22, 2019Date of Patent: August 18, 2020Assignee: ROHM CO., LTD.Inventor: Seita Iwahashi
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Publication number: 20200075529Abstract: The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10?6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.Type: ApplicationFiled: November 6, 2019Publication date: March 5, 2020Inventors: Takukazu OTSUKA, Seita IWAHASHI, Maiko HATANO, Ryuta WATANABE, Katsuhiko YOSHIHARA
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Publication number: 20190252279Abstract: The power module includes: a first metallic pattern; a plurality of power devices bonded on the first metallic pattern, each of the plurality of the power devices has a thickness thinner than a thickness of the metallic pattern; a frame member disposed so as to collectively enclose a predetermined number of the power devices on the first metallic pattern; a second metallic pattern disposed outside the frame member; and a resin layer configured to seal the plurality of the power devices and the first and second metallic patterns so as to include the frame member, wherein the frame member suppresses a stress according to a difference between a coefficient of thermal expansion of the metallic pattern and a coefficient of thermal expansion of the power devices. There is provided the power module easy to be fabricated, capable of suppressing the degradation of the bonded portion and improving reliability.Type: ApplicationFiled: April 22, 2019Publication date: August 15, 2019Inventor: Seita IWAHASHI
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Publication number: 20190035771Abstract: A power module includes: a first insulating substrate including a first conductive layer; a first semiconductor device Q4 disposed on the first conductive layer 14D, the first semiconductor device of which one side of a main electrode is connected to the first conductive layer; a second insulating substrate disposed on the first insulating substrate so as to be opposite to the first semiconductor device and including a second conductive layer and a third conductive layer; a first pillar electrode connecting between the first conductive layer and the second conductive layer; and a second pillar electrode connecting between another side of the main electrode of the first semiconductor device and the third conductive layer. The second conductive layer is connected to any one of a positive or negative electrode pattern for supplying power to the first semiconductor device, and the third conductive layer is connected to another electrode pattern.Type: ApplicationFiled: September 19, 2018Publication date: January 31, 2019Inventors: Seita IWAHASHI, Masao SAITO
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Publication number: 20180350710Abstract: A semiconductor device includes: a substrate; at least one semiconductor chip disposed on the substrate; a first resin layer disposed on the semiconductor chip, the first resin layer formed so as to cover the substrate and the semiconductor chip; a second resin layer disposed on the first resin layer, the second resin layer having a CTE smaller than a CTE of the first resin layer and having a coefficient of elasticity larger than a coefficient of elasticity of the first resin layer, wherein the second resin layer is formed so as to cover at least an upper surface of the first resin layer. There is provided the semiconductor device and a power module, capable of reducing a thermal resistance to improve a current density by reducing warpage of the semiconductor device, and capable of realizing cost reduction and miniaturization thereof by reducing the number of chips.Type: ApplicationFiled: August 6, 2018Publication date: December 6, 2018Inventors: Seita IWAHASHI, Masao SAITO
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Publication number: 20180138100Abstract: The power module includes: a first metallic pattern; a plurality of power devices bonded on the first metallic pattern, each of the plurality of the power devices has a thickness thinner than a thickness of the metallic pattern; a frame member disposed so as to collectively enclose a predetermined number of the power devices on the first metallic pattern; a second metallic pattern disposed outside the frame member; and a resin layer configured to seal the plurality of the power devices and the first and second metallic patterns so as to include the frame member, wherein the frame member suppresses a stress according to a difference between a coefficient of thermal expansion of the metallic pattern and a coefficient of thermal expansion of the power devices. There is provided the power module easy to be fabricated, capable of suppressing the degradation of the bonded portion and improving reliability.Type: ApplicationFiled: January 5, 2018Publication date: May 17, 2018Inventor: Seita Iwahashi
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Patent number: 9444222Abstract: The 2D-PC surface emitting laser includes: a PC layer; and a lattice point for forming resonant-state arranged in the photonic crystal layer, and configured so that a light wave in a band edge in photonic band structure in the PC layer is diffracted in a plane of the PC layer, and is diffracted in a surface vertical direction of the PC layer. The perturbation for diffracting the light wave in the surface vertical direction of the PC layer is applied to the lattice point for forming resonant-state. The term “perturbation” means that modulation is periodically applied to the lattice point for forming resonant-state. For example, the periodic modulation may be refractive index modulation, hole-diameter modulation, or hole-depth modulation.Type: GrantFiled: January 7, 2014Date of Patent: September 13, 2016Assignee: ROHM CO., LTD.Inventors: Takui Sakaguchi, Seita Iwahashi, Eiji Miyai, Wataru Kunishi, Dai Onishi, Yoshikatsu Miura
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Patent number: 9088133Abstract: Provided is a two-dimensional photonic crystal surface emitting laser having an active layer for generating light of a predetermined wavelength range by an injection of electric current and a two-dimensional photonic crystal layer provided on one side of the active layer, the layer having a plate-shaped base member in which modified refractive index areas whose refractive index differs from that of the base member are arranged.Type: GrantFiled: February 27, 2013Date of Patent: July 21, 2015Assignees: KYOTO UNIVERSITY, ROHM CO., LTD.Inventors: Susumu Noda, Seita Iwahashi, Toshiyuki Nobuoka
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Publication number: 20140355635Abstract: The 2D-PC SEL includes: a PC layer; and a lattice point for forming resonant-state arranged in the PC layer, and configured so that a light wave at a band edge in photonic band structure in the PC layer is diffracted in a plane of the PC layer, and is diffracted in a direction normal to the surface of the PC layer. The lattice point for forming resonant-state has two types of lattice points including a first lattice point and a second lattice point, and the shapes of the adjacent first lattice point and second lattice point are different from each other.Type: ApplicationFiled: June 3, 2014Publication date: December 4, 2014Applicant: ROHM CO., LTD.Inventors: Seita IWAHASHI, Dai ONISHI, Eiji MIYAI, Wataru KUNISHI
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Publication number: 20140348195Abstract: The 2D-PC vertical cavity surface emitting laser includes: a PC layer; and a lattice point for forming resonant-state arranged in the photonic crystal layer, and configured so that a light wave in a band edge in photonic band structure in the PC layer is diffracted in a plane of the PC layer, and is diffracted in a surface vertical direction of the PC layer. The perturbation for diffracting the light wave in the surface vertical direction of the PC layer is applied to the lattice point for forming resonant-state. The term “perturbation” means that modulation is periodically applied to the lattice point for forming resonant-state. For example, the periodic modulation may be refractive index modulation, hole-diameter modulation, or hole-depth modulation.Type: ApplicationFiled: January 7, 2014Publication date: November 27, 2014Applicant: ROHM CO., LTD.Inventors: Takui SAKAGUCHI, Seita IWAHASHI, Eiji MIYAI, Wataru KUNISHI, Dai ONISHI, Yoshikatsu MIURA
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Patent number: 8619830Abstract: A photonic crystal surface emission laser includes an active layer, and a photonic crystal layer made of a plate-shaped slab provided with modified refractive index area having a refractive index different from that of the slab, the modified refractive index areas being arranged on each of the lattice points of a first rhombic-like lattice and a second rhombic-like lattice in which both diagonals are mutually parallel and only one diagonal is of a different length, wherein ax1, ax2, ay, and n satisfy the following inequality: ? 1 a x ? ? 1 - 1 a x ? ? 2 ? ( 1 a x ? ? 1 + 1 a x ? ? 2 ) 2 + ( 2 a y ) 2 ? 1 n .Type: GrantFiled: August 10, 2012Date of Patent: December 31, 2013Assignees: Kyoto University, Rohm Co., Ltd.Inventors: Susumu Noda, Seita Iwahashi, Toshiyuki Nobuoka, Takui Sakaguchi, Eiji Miyai, Wataru Kunishi, Dai Ohnishi, Kazuya Nagase, Yoshikatsu Miura
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Publication number: 20130243026Abstract: Provided is a two-dimensional photonic crystal surface emitting laser having an active layer for generating light of a predetermined wavelength range by an injection of electric current and a two-dimensional photonic crystal layer provided on one side of the active layer, the layer having a plate-shaped base member in which modified refractive index areas whose refractive index differs from that of the base member are arranged.Type: ApplicationFiled: February 27, 2013Publication date: September 19, 2013Applicants: ROHM CO., LTD., KYOTO UNIVERSITYInventors: Susumu NODA, Seita IWAHASHI, Toshiyuki NOBUOKA
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Publication number: 20130039375Abstract: A photonic crystal surface emission laser includes an active layer, and a photonic crystal layer made of a plate-shaped slab provided with modified refractive index area having a refractive index different from that of the slab, the modified refractive index areas being arranged on each of the lattice points of a first rhombic-like lattice and a second rhombic-like lattice in which both diagonals are mutually parallel and only one diagonal is of a different length, wherein ax1, ax2, ay, and n satisfy the following inequality: ? 1 a x ? ? 1 - 1 a x ? ? 2 ? ( 1 a x ? ? 1 + 1 a x ? ? 2 ) 2 + ( 2 a y ) 2 ? 1 n .Type: ApplicationFiled: August 10, 2012Publication date: February 14, 2013Applicants: ROHM CO., LTD., KYOTO UNIVERSITYInventors: Susumu NODA, Seita IWAHASHI, Toshiyuki NOBUOKA, Takui SAKAGUCHI, Eiji MIYAI, Wataru KUNISHI, Dai OHNISHI, Kazuya NAGASE, Yoshikatsu MIURA