Patents by Inventor Seitaro Hattori

Seitaro Hattori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Laminate and method of forming the same, insulating film, and semiconductor device
    Patent number: 7556860
    Abstract: A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.
    Type: Grant
    Filed: April 26, 2006
    Date of Patent: July 7, 2009
    Assignee: JSR Corporation
    Inventors: Masahiro Akiyama, Seitaro Hattori, Takahiko Kurosawa, Manabu Sekiguchi, Terukazu Kokubo, Michihiro Mita, Tatsuya Yamanaka, Masaki Obi
  • Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film
    Patent number: 7462678
    Abstract: A process for producing a film forming composition, the process including hydrolyzing and condensing: (A) at least one silane compound selected from a compound (A-1) shown by the following general formula (1), a compound (A-2) shown by the following general formula (2), and a compound (A-3) shown by the following general formula (3), RaSi(OR1)4-a??(1) Si(OR2)4??(2) R3b(R4O)3-bSi—(R7)d—Si(OR5)3-cR6c??(3); and (B) a cyclic silane compound shown by the following general formula (4):
    Type: Grant
    Filed: September 23, 2004
    Date of Patent: December 9, 2008
    Assignee: JSR Corporation
    Inventors: Masahiro Akiyama, Seitaro Hattori, Masaki Obi, Koichi Hasegawa
  • Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device
    Patent number: 7291567
    Abstract: A method of forming a silica-based film includes: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment.
    Type: Grant
    Filed: July 20, 2005
    Date of Patent: November 6, 2007
    Assignee: JSR Corporation
    Inventors: Hajime Tsuchiya, Seitaro Hattori, Masahiro Akiyama, Atsushi Shiota
  • Laminate and method of forming the same, insulating film, and semiconductor device
    Publication number: 20060216531
    Abstract: A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.
    Type: Application
    Filed: April 26, 2006
    Publication date: September 28, 2006
    Applicant: JSR CORPORATION
    Inventors: Masahiro Akiyama, Seitaro Hattori, Takahiko Kurosawa, Manabu Sekiguchi, Terukazu Kokubo, Michihiro Mita, Tatsuya Yamanaka, Masaki Obi
  • Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device
    Publication number: 20060024980
    Abstract: A method of forming a silica-based film includes: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment.
    Type: Application
    Filed: July 20, 2005
    Publication date: February 2, 2006
    Applicant: JSR CORPORATION
    Inventors: Hajime Tsuchiya, Seitaro Hattori, Masahiro Akiyama, Atsushi Shiota
  • Composition for film formation, method for preparing the composition, and method for forming insulating film
    Publication number: 20050112386
    Abstract: A composition for film formation having low dielectric constant, excellent adhesion to a silica film and excellent adhesion to an organic film, a method for preparing the composition, and a method for forming a silica film using the composition are disclosed. The composition for film formation comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one specific silane compound, and (B) an oxygen-containing organic solvent, wherein the content of the product of hydrolysis and condensation (A) is less than 5% by weight based on the weight of the composition. The composition can form a silica film having improved dielectric constant characteristics and storage stability, and also improved adhesion to other silica films and organic films.
    Type: Application
    Filed: November 19, 2004
    Publication date: May 26, 2005
    Applicant: JSR CORPORATION
    Inventors: Masahiro Akiyama, Manabu Sekiguchi, Seitaro Hattori, Terukazu Kokubo
  • Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film
    Publication number: 20050096415
    Abstract: A process for producing a film forming composition, the process including hydrolyzing and condensing: (A) at least one silane compound selected from a compound (A-1) shown by the following general formula (1), a compound (A-2) shown by the following general formula (2), and a compound (A-3) shown by the following general formula (3), RaSi(OR1)4-a??(1) Si(OR2)4??(2) R3b(R4O)3-bSi—(R7)d—Si(OR5)3-cR6c??(3); and (B) a cyclic silane compound shown by the following general formula (4):
    Type: Application
    Filed: September 23, 2004
    Publication date: May 5, 2005
    Applicant: JSR CORPORATION
    Inventors: Masahrio Akiyama, Seitaro Hattori, Masaki Obi, Koichi Hasegawa