Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as a device surface, a second main surface at a side opposite to the first main surface, and a side surface connecting the first main surface and the second main surface, a main surface insulating layer including an insulating material, covering the first main surface of the SiC semiconductor layer, and having an insulating side surface continuous to the side surface of the SiC semiconductor layer, and a boundary modified layer including a first region that is modified to be of a property differing from the SiC monocrystal and a second region that is modified to be of a property differing from the insulating material, and being formed across the side surface of the SiC semiconductor layer and the insulating side surface of the main surface insulating layer.

Abstract: An object of the present disclosure is to provide a semiconductor device and a semiconductor module in which fluctuations in the characteristics caused by pressure from above are suppressed. A semiconductor device according to the present disclosure includes a semiconductor substrate having a cell portion provided with a semiconductor element and a terminal portion provided around the cell portion in plan view, a first electrode provided on the semiconductor substrate, a second electrode provided at a position corresponding to the cell portion on the first electrode, an interlayer film provided in a position corresponding to the cell portion and the terminal portion on the first electrode, and a protective film provided in a position corresponding to the cell portion and the terminal portion on the interlayer film.

Abstract: A particle adhesion device includes: a holder; a chamber; a nozzle; an intake port; and a flow control member. The holder holds a filter substrate having a first end face and a second end face. The chamber is in communication with the holder and is arranged so that the first end face of the filter substrate faces a space in the chamber. The nozzle is arranged on an opposite surface of the chamber opposing to the first end face of the filter substrate, and can inject an aerosol containing particles toward the first end face of the filter substrate. The intake port is provided on the opposite surface of the chamber and can incorporate an ambient gas. The flow control member is arranged on the opposite surface provided with the intake port, and can control the flow of the ambient gas.

Abstract: A pillar-shaped honeycomb structure including a plurality of first cells extending from an inlet side end surface to an outlet side end surface, and a plurality of second cells extending from the inlet side end surface to the outlet side end surface, with a porous partition wall interposed therebetween, wherein a porous film having a porosity higher than that of the partition walls is provided on a surface of each of the first cells, and at a cross-section orthogonal to the direction in which the first cells of the pillar-shaped honeycomb structure filter extend, the average thickness of the porous film in the central portion is larger than the average thickness of the porous film in the outer peripheral portion.

Abstract: A Schottky barrier diode according to the present disclosure includes an n-type semiconductor substrate, one or more p-type guard rings provided on a side of an upper surface of the semiconductor substrate, an anode electrode provided on the upper surface of the semiconductor substrate, a cathode electrode provided on a rear surface of the semiconductor substrate and an insulating film provided on an inner guard ring on an innermost side among the one or more guard rings, wherein the anode electrode rides on the insulating film and has its end portion provided just above the inner guard ring, the anode electrode and the inner guard ring are provided away from each other, and a thickness of the insulating film is 1.0 ?m or more.

Abstract: A method for manufacturing a pillar-shaped honeycomb structure filter including; attaching ceramic particles to a surface of the first cells by ejecting an aerosol including the ceramic particles toward the inlet side end surface from a direction perpendicular to the inlet side end surface while applying a suction force to the outlet side end surface to suck the ejected aerosol from the inlet side end surface, wherein the ejection of the aerosol is carried out using an aerosol generator including a drive gas flow path for flowing a pressurized drive gas, a supply port provided on the way of the drive gas flow path and capable of sucking the ceramic particles from an outer peripheral side of the drive gas flow path toward an inside of the drive gas flow path, and a nozzle attached to a tip of the drive gas flow path and capable of ejecting the aerosol.

Abstract: A pillar-shaped honeycomb structure including a plurality of first cells extending from an inlet side end surface to an outlet side end surface, and a plurality of second cells extending from the inlet side end surface to the outlet side end surface, with a porous partition wall interposed therebetween, wherein a porous film having a porosity higher than that of the partition walls is provided on a surface of each of the first cells, and at a cross-section orthogonal to the direction in which the first cells of the pillar-shaped honeycomb structure filter extend, the average thickness of the porous film in the central portion is larger than the average thickness of the porous film in the outer peripheral portion.

Abstract: A vehicle driving assistance system includes a display part that displays an attention-calling marking (M) so as to be superimposed on a real view (S); a driver's vehicle information obtaining part that obtains driver's vehicle information including information indicating a moving state of a driver's vehicle; a moving object information obtaining part that obtains moving object information including information indicating a moving state of a moving object (90) around the driver's vehicle; and an attention-calling part that allows the display part to display the attention-calling marking (M) based on the driver's vehicle information and the moving object information, the attention-calling marking (M) using, as a reference, a closest approach point (P) where the driver's vehicle and the moving object (90) make closest approach to each other in the future.

Abstract: A semiconductor device includes a surface metal formed on a substrate, a first protective film formed on the surface metal, a second protective film having a first portion provided on the first protective film and a second portion continuing to the first portion and provided on the surface metal and being transparent to light, and a metal film having a main body portion provided on the surface metal and a run-on portion continuing to the main body portion and running onto the first protective film, wherein the main body portion is thicker than the first protective film, the first portion is thicker than the run-on portion, and the second portion is thicker than the main body portion.

Abstract: An aluminum electrode (2) is provided on a semiconductor device (1). A metallic film (3) for a solder joint is provided on the aluminum electrode (2). The organic protective film (4) is apart from the metallic film (3). An interval between the organic protective film (4) and the metallic film (3) is equal to or greater than half of a thickness of the organic protective film (4). Thus, even when the organic protective film (4) is deformed during sinter joining, the stress is not transmitted to the metallic film (3). Therefore, it is possible to prevent the solder connection metallic film (3) from cracking.

Abstract: A semiconductor device includes a surface metal formed on a substrate, a first protective film formed on the surface metal, a second protective film having a first portion provided on the first protective film and a second portion continuing to the first portion and provided on the surface metal and being transparent to light, and a metal film having a main body portion provided on the surface metal and a run-on portion continuing to the main body portion and running onto the first protective film, wherein the main body portion is thicker than the first protective film, the first portion is thicker than the run-on portion, and the second portion is thicker than the main body portion.

Abstract: An element electrode is located on a surface of a semiconductor element. A metal film is located on the element electrode and includes an inner region and an outer region located around the inner region. The metal film has an opening that exposes the element electrode between the inner region and the outer region. The element electrode has solder wettability lower than solder wettability of the metal film. An external electrode is solder-bonded to the inner region of the metal film.

Abstract: An aluminum electrode (2) is provided on a semiconductor device (1). A metallic film (3) for a solder joint is provided on the aluminum electrode (2). The organic protective film (4) is apart from the metallic film (3). An interval between the organic protective film (4) and the metallic film (3) is equal to or greater than half of a thickness of the organic protective film (4). Thus, even when the organic protective film (4) is deformed during sinter joining, the stress is not transmitted to the metallic film (3). Therefore, it is possible to prevent the solder connection metallic film (3) from cracking.

Abstract: An element electrode is located on a surface of a semiconductor element. A metal film is located on the element electrode and includes an inner region and an outer region located around the inner region. The metal film has an opening that exposes the element electrode between the inner region and the outer region. The element electrode has solder wettability lower than solder wettability of the metal film. An external electrode is solder-bonded to the inner region of the metal film.

Abstract: A semiconductor device includes a substrate, a surface electrode of aluminum-containing material formed on the substrate, a metal film of solderable material formed on the surface electrode, and an end-securing film securing an end of the metal film and having a portion on the surface electrode and also having an overlapping portion which is formed integrally with the portion on the surface electrode and which overlaps the end of the metal film.

Abstract: A semiconductor device includes a substrate, a surface electrode of aluminum-containing material formed on the substrate, a metal film of solderable material formed on the surface electrode, and an end-securing film securing an end of the metal film and having a portion on the surface electrode and also having an overlapping portion which is formed integrally with the portion on the surface electrode and which overlaps the end of the metal film.

Abstract: An electrically retractable outer mirror for a vehicle includes a mirror housing and a mirror accommodated in the mirror housing. Angle of the mirror is adjustable relative to a vehicle body. The angle of the mirror in an upward/downward direction is adjusted through an actuator arranged in the mirror housing, and an angle of the mirror in a rightward/leftward direction is adjusted by a rotating movement of the mirror housing around an axis substantially extending along a vertical direction.