Patents by Inventor Seizou Meguro

Seizou Meguro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single silicon crystal having low OSF density induced by oxidation and method for production thereof
    Patent number: 5373804
    Abstract: A single silicon crystal wafer produced by the Czochvalski method and measuring not less than 100 mm in diameter, a single silicon crystal having low OSF density induced by oxidation, wherein regarding the local resistivity measured by the spread resistance method on the surface of said wafer subjected in advance to a heat treatment for extinction of oxygen donor, the proportion of the number of points of measurement registering errors exceeding .+-.1.0% of the mean value is not more than 35% of the total number of points of measurement, and regarding the distribution of oxygen concentration in solid solution in the wafer surface, the difference between the maximum and the minimum is not more than 2.0% of the maximum, and a method for production thereof.
    Type: Grant
    Filed: May 8, 1992
    Date of Patent: December 20, 1994
    Assignees: Nippon Steel Corporation, NSC Electron Corporation
    Inventors: Masaharu Tachimori, Tadashi Sakon, Takayuki Kaneko, Seizou Meguro