Abstract: The present invention discloses a conductive substrate, a perovskite substrate using the conductive substrate, and a solar cell using the perovskite substrate. The conductive substrate, the perovskite substrate, and the solar cell of the present invention include a conductive base and a conductive compound stacked on the conductive base. The conductive compound is represented by Formula 1, 2 or 3. The conductive compound is capable of multi-electron redox reactions, possesses p-type organic molecular properties, and has an oxidation potential or highest occupied molecular orbital (HOMO) matching the valence band of perovskite so that holes generated in an absorber layer are selectively separated for the application of the perovskite material, achieving enhanced photoelectric conversion efficiency of the solar cell and a significantly reduced difference between the forward and reverse conversion efficiencies (hysteresis index) of the solar cell.

Abstract: The present invention discloses a conductive substrate, a perovskite substrate using the conductive substrate, and a solar cell using the perovskite substrate. The conductive substrate, the perovskite substrate, and the solar cell of the present invention include a conductive base and a conductive compound stacked on the conductive base. The conductive compound is represented by Formula 1, 2 or 3. The conductive compound is capable of multi-electron redox reactions, possesses p-type organic molecular properties, and has an oxidation potential or highest occupied molecular orbital (HOMO) matching the valence band of perovskite so that holes generated in an absorber layer are selectively separated for the application of the perovskite material, achieving enhanced photoelectric conversion efficiency of the solar cell and a significantly reduced difference between the forward and reverse conversion efficiencies (hysteresis index) of the solar cell.

Abstract: The present invention relates to an encapsulant capable of reducing potential-induced degradation (PID). The encapsulant is used to seal a solar cell to form a photovoltaic module, in which silica gel is dispersed in the encapsulant as a sodium ion adsorbent. Since the silica gel that is highly transparent is used as the sodium ion adsorbent, it is possible to prevent PID attributable to sodium ions and to prevent deterioration in photovoltaic efficiency of the photovoltaic module. Since the silica gel has a high specific surface area, it is possible to adsorb sodium ions with a small amount of the silica gel.

Abstract: A jig for a sample for a solar photovoltaic device is disclosed. The jig includes a cradle unit supporting the sample and a contact unit including at least one probe pin coming into contact with a busbar of the sample located in the cradle unit. The contact unit includes a coupling plate coupled with the cradle unit and at least one contact bar including a PCB and connected to the coupling plate, the contact bar having at least one probe pin aligned with the busbar of the sample with interposition of a probe pin connecting block. the jig includes a rotation support unit coupled with the cradle unit by a rotation shaft to allow the cradle unit to be rotated at an angle of 180° or greater so that upper and lower surfaces of the sample supported by the cradle unit are reversed.

Abstract: A method of manufacturing a CIGS-based solar cell including a transparent rear electrode, the method comprising forming a rear electrode layer including a transparent oxide material; forming rear electrode patterns including a metal material on the rear electrode layer; forming a CIGS-based light absorption layer on the rear electrode layer on which the rear electrode patterns are formed; forming a buffer layer on the light absorption layer; and forming a front electrode including a transparent material on the buffer layer, wherein the rear electrode patterns are provided with a transmissive portion, through which light is transmitted, formed between patterns of the metal material.

Abstract: A method of manufacturing a CIGS-based solar cell including a transparent rear electrode, the method comprising forming a rear electrode layer including a transparent oxide material; forming rear electrode patterns including a metal material on the rear electrode layer; forming a CIGS-based light absorption layer on the rear electrode layer on which the rear electrode patterns are formed; forming a buffer layer on the light absorption layer; and forming a front electrode including a transparent material on the buffer layer, wherein the rear electrode patterns are provided with a transmissive portion, through which light is transmitted, formed between patterns of the metal material.

Abstract: Disclosed is a photovoltaic package having a simple structure configured to enable mid-term or short-term use thereof, the photovoltaic package including a photovoltaic cell for producing electrical energy through photoelectric conversion, a front sealing sheet disposed on the front side of the photovoltaic cell, and a back sealing sheet disposed on the back side of the photovoltaic cell, wherein at least one of the front sealing sheet and the back sealing sheet contains therein moisture-absorbent particles, and the front sealing sheet and the back sealing sheet are adhered to each other so that the photovoltaic cell is sealed.

Abstract: A jig for a sample for a solar photovoltaic device is disclosed. The jig includes a cradle unit supporting the sample and a contact unit including at least one probe pin coming into contact with a busbar of the sample located in the cradle unit. The contact unit includes a coupling plate coupled with the cradle unit and at least one contact bar including a PCB and connected to the coupling plate, the contact bar having at least one probe pin aligned with the busbar of the sample with interposition of a probe pin connecting block. the jig includes a rotation support unit coupled with the cradle unit by a rotation shaft to allow the cradle unit to be rotated at an angle of 180° or greater so that upper and lower surfaces of the sample supported by the cradle unit are reversed.

Abstract: Methods and memory systems are provided that can detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.

Abstract: Methods and memory systems are provided that can detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.

Abstract: Methods and memory systems are provided that can detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.

Abstract: A method of performing a write operation in a nonvolatile memory device comprises storing write data in a log block used to update a data block, determining whether a write pattern stored in the log block is a sequential write pattern or a random write pattern, and selecting a new data block for storing merged data in the data block and the log block. The new data block is determined to be a single-level cell block or a multi-level cell block according to the determined write pattern.

Abstract: Disclosed are a high density CIS thin film and a method of manufacturing the same, which includes coating CIS nanopowders, CIGS nanopowders or CZTS nanopowders on a substrate by non-vacuum coating, followed by heat treatment with cavities between the nanopowders filled with filling elements such as copper, indium, gallium, zinc, tin, and the like. The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell.

Abstract: Disclosed are a high density CIS thin film and a method of manufacturing the same, which includes coating CIS nanopowders, CIGS nanopowders or CZTS nanopowders on a substrate by non-vacuum coating, followed by heat treatment with cavities between the nanopowders filled with filling elements such as copper, indium, gallium, zinc, tin, and the like. The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell.

Abstract: Provided is a memory card device. The memory card device includes a flash memory and a controller. The flash memory includes a boot area storing boot data, and a user area storing user data. The controller accesses the boot area or the user area according to an external command. Boot data can be stored in a memory card integrated in an electronic device. Also, when a host requests an access to boot data/user data stored in the memory card, the boot data/user data can be accessed under control of the controller.

Abstract: Methods and memory systems are provided that detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.

Abstract: A method of performing a write operation in a nonvolatile memory device comprises storing write data in a log block used to update a data block, determining whether a write pattern stored in the log block is a sequential write pattern or a random write pattern, and selecting a new data block for storing merged data in the data block and the log block. The new data block is determined to be a single-level cell block or a multi-level cell block according to the determined write pattern.

Abstract: A method of verifying an initial state of a non-volatile memory device, a command for verify an initial state of a unit and a unit address corresponding to the unit received from a memory controller. An initial state of memory cells, which correspond to the unit address, is verified in response to the command. A verification result of the unit is transmitted to the memory controller.

Abstract: Methods and memory systems are provided that can detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.

Abstract: Provided is a memory card device. The memory card device includes a flash memory and a controller. The flash memory includes a boot area storing boot data, and a user area storing user data. The controller accesses the boot area or the user area according to an external command. Boot data can be stored in a memory card integrated in an electronic device. Also, when a host requests an access to boot data/user data stored in the memory card, the boot data/user data can be accessed under control of the controller.