Patents by Inventor Seki Yasukazu

Seki Yasukazu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Conductivity modulation type MISFET and a control circuit thereof
    Patent number: 5245202
    Abstract: A conductivity modulation type MISFET, and a control circuit thereof are provided. A semiconductor device 1 comprises a conductivity modulation type MOSFET 1a and a built-in MOSFET 1b which is designed to control a source electrode 12a and a control electrode 13 of a parasitic transistor to be in a short state or an open state, said conductivity modulation type MOSFET 1a having a polysilicon gate 6 on an obverse surface of n.sup.- -type conductivity modulation layer 4, a p-type channel diffusion area 7, n.sup.+ -type source diffusion area 8 and a parasitic transistor control electrode 13 conductively connected to the p-type channel diffusion area 7 through a p.sup.+ -type contact area 9.
    Type: Grant
    Filed: May 28, 1992
    Date of Patent: September 14, 1993
    Assignee: Fuji Electric Co., Ltd.
    Inventor: Seki Yasukazu