Abstract: An method for preparing a flexible transparent electrode film that has a high transmittance and low sheet resistance without having to go through a separate heating process by using cesium, and a flexible transparent electrode film prepared thereby, the method including: applying a nanowire transparent conductive film on a high molecular base material film; coating the nanowire transparent conductive film with a sol-gel solution wherein titanium dioxide and cesium are mixed; and welding the nanowire.

Abstract: Provided herein is a method for forming silicide of a semiconductor device and a source/drain for use in the semiconductor device, the method including preparing a silicon substrate that includes silicon; depositing ytterbium, refractory metal and transition metal nitride on the silicon substrate so that the ytterbium and the refractory metal form an ytterbium alloy thin film and the transition metal nitride form a capping layer; and heating the silicon substrate to form ytterbium silicide on an interface between the silicon substrate and the ytterbium alloy thin film.

Abstract: An method for preparing a flexible transparent electrode film that has a high transmittance and low sheet resistance without having to go through a separate heating process by using cesium, and a flexible transparent electrode film prepared thereby, the method including: applying a nanowire transparent conductive film on a high molecular base material film; coating the nanowire transparent conductive film with a sol-gel solution wherein titanium dioxide and cesium are mixed; and welding the nanowire.