Abstract: An exemplary CMOS image sensor comprises a reset transistor, a photodiode, reset drain voltage circuitry, and reset gate voltage circuitry. A cathode of the photodiode is connected to a source of the reset transistor, and an anode of the photodiode is connected to ground. The reset drain voltage circuitry is connected to a drain of the reset transistor, and the reset gate voltage circuitry is connected to a gate of the reset transistor. During an exemplary hard reset operation, the reset drain voltage circuitry supplies a first drain voltage to the drain of the reset transistor in accordance with a determined level of light for exposure, which is determined dynamically. According to another exemplary reset operation, a hard reset phase is immediately followed by a soft reset phase.

Abstract: The present invention relates to devices and methods for image sensing. In one aspect, the present invention relates to a device including a plurality of pixels, wherein each pixel includes a charge transfer device and photodetector, and each of the pixels has a pitch of about 3 microns or less. This aspect further includes a select transistor, a reset transistor, a source follower transistor, and a sense node, wherein the select transistor, the reset transistor, the source follower transistor, and the sense node are shared by the plurality of pixels.

Abstract: An exemplary CMOS image sensor comprises a plurality of pixels arranged in an array. The plurality of pixels includes a first pixel proximate an optical center of the array, and a second pixel proximate a peripheral edge of the array. The CMOS image sensor further comprises a first metal interconnect segment associated with the first pixel situated in a first metal layer, and a second metal interconnect segment associated with the second pixel situated in the first metal layer. The second metal interconnect segment is shifted closer to the optical center of the array than the first metal interconnect segment so that the second metal interconnect segment approximately aligns with a principle ray angle incident the second pixel, thereby reducing pixel light shadowing.

Abstract: An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from reaching a shielded dark signal detector. In one implementation, dark signal detector is shielded and separated from the active area to substantially reduce the radiation charges that reach the dark signal detector. In another implementation, the image sensor includes a radiation guard that is disposed between the active area and the shielded detector. When radiation or light is permitted to enter the active area, the guard when adequately biased attracts and collects radiated charges that may otherwise travel beyond the active area to reach the shielded detector and contaminate a measurement for the dark signal reference.