Abstract: The present invention relates to a method of forming nanostructures or nanomaterials. The method comprises providing a thermal control barrier on a substrate and forming the nanostructures or nanomaterials. The method may, for example, be used to form carbon nanotubes by plasma enhanced chemical vapor deposition using a carbon containing gas plasma: The temperature of the substrate may be maintained at less than 350° C. while the carbon nanotubes are formed.

Abstract: A method of forming carbon nanotubes by plasma enhanced chemical vapor deposition using a carbon containing gas plasma, wherein the carbon nanotubes are not formed on a substrate at a temperature 300° C. or above.

Abstract: A method of producing a thin film comprising uniformly dispersed carbon nanotubes, the method comprising the steps of: adapting a molecular semiconductor to make it soluble; adapting the molecular semiconductor to facilitate the formation of a high degree of molecular order and frontier orbital overlap between adjacent molecules; adapting carbon nanotubes to make them soluble; combining the soluble carbon nanotubes and the soluble molecular semiconductor in a solvent to form a solution; producing the thin film from the solution.

Abstract: A method of producing a photo-voltaic device comprising the steps of: synthesising carbon nanotubes; adapting the synthesised carbon nanotubes to provide a surface defect such as to create an effective band gap; selecting an organic semiconductor material which facilitates the efficient energy transfer between carbon nanotubes and the organic material, wherein the organic material is selected such that the energy band gap formed between the HOMO and LUMO energy levels lies within the effective band gap of the adapted carbon nanotubes; combining the adapted carbon nanotubes and the selected organic material to form a composite material.

Abstract: A method of producing a thin film comprising uniformly dispersed carbon nanotubes, the method comprising the steps of: adapting a molecular semiconductor to make it soluble; adapting the molecular semiconductor to facilitate the formation of a high degree of molecular order and frontier orbital overlap between adjacent molecules; adapting carbon nanotubes to make them soluble; combining the soluble carbon nanotubes and the soluble molecular semiconductor in a solvent to form a solution; producing the thin film from the solution.

Abstract: The present invention relates to a method of forming nanostructures or nanomaterials. The method comprises providing a thermal control barrier on a substrate and forming the nanostructures or nanomaterials. The method may, for example, be used to form carbon nanotubes by plasma enhanced chemical vapour deposition using a carbon containing gas plasma: The temperature of the substrate may be maintained at less than 350° C. while the carbon nanotubes are formed.

Abstract: A method of forming carbon nanotubes by plasma enhanced chemical vapour deposition using a carbon containing gas plasma, wherein the carbon nanotubes are not formed on a substrate at a temperature 300° C. or above.