Abstract: An apparatus for generating uniform plasma across and beyond the peripheral edge of a substrate has a dielectric body with an upper electrode and an annular electrode embedded therein. The outer perimeter of the upper electrode overlaps the inner perimeter of the annular electrode. In one embodiment, the upper electrode and the annular electrode are electrically coupled by molybdenum vias. In one embodiment, the upper electrode is coupled to a DC power source to provide electrostatic force for chucking the substrate. In one embodiment, the upper electrode is coupled to an RF source for exciting one or more processing gasses into plasma for substrate processing.

Abstract: A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel.

Abstract: A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a flow equalizer configured to control the flow of gases between a process volume and an exhaust port of a process chamber. The flow equalizer includes at least one restrictor plate configured to be disposed in a plane proximate a surface of a substrate to be processed and defines an azimuthally non-uniform gap between an edge of the at least one restrictor plate and one of either a chamber wall or a substrate support when installed in the process chamber.

Abstract: An electrostatic chuck has an electrode embedded in a dielectric which is mounted on a pedestal. The dielectric has a contact surface with an average surface roughness of less than about 0.5 ?m, a surface peak waviness of less than about 0.12 ?m, and a surface peak waviness material ratio of greater than about 20%. The surface texture can be formed by lapping the dielectric surface with a slurry of abrasive particles.

Abstract: An apparatus for generating uniform plasma across and beyond the peripheral edge of a substrate has a dielectric body with an upper electrode and an annular electrode embedded therein. The outer perimeter of the upper electrode overlaps the inner perimeter of the annular electrode. In one embodiment, the upper electrode and the annular electrode are electrically coupled by molybdenum vias. In one embodiment, the upper electrode is coupled to a DC power source to provide electrostatic force for chucking the substrate. In one embodiment, the upper electrode is coupled to an RF source for exciting one or more processing gasses into plasma for substrate processing.

Abstract: Embodiments of the present invention provide a method for low temperature aerosol deposition of a plasma resistive layer on semiconductor chamber components/parts. In one embodiment, the method for low temperature aerosol deposition includes forming an aerosol of fine particles in an aerosol generator, dispensing the aerosol from the aerosol generator into a processing chamber toward a surface of a substrate, maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius, and depositing a layer from material in the aerosol on the substrate surface.

Abstract: Embodiments of the present invention provide a method for low temperature aerosol deposition of a plasma resistive layer on semiconductor chamber components/parts. In one embodiment, the method for low temperature aerosol deposition includes forming an aerosol of fine particles in an aerosol generator, dispensing the aerosol from the aerosol generator into a processing chamber toward a surface of a substrate, maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius, and depositing a layer from material in the aerosol on the substrate surface.

Abstract: A support for a substrate processing chamber has upper and lower walls that are joined by a peripheral sidewall to define a reservoir. A fluid inlet supplies a heat transfer fluid to the reservoir. In one version, a plurality of protrusions extends into the reservoir to perturb the flow of the heat transfer fluid through the reservoir. In another version, the reservoir is an elongated channel having one or more of (i) serpentine convolutions, (ii) integral fins extending into the channel, (iii) a roughened internal surface, or (iv) a changing cross-section. A fluid outlet discharges the heat transfer fluid from the reservoir.

Abstract: A support for a substrate processing chamber has upper and lower walls that are joined by a peripheral sidewall to define a reservoir. A fluid inlet supplies a heat transfer fluid to the reservoir. In one version, a plurality of protrusions extends into the reservoir to perturb the flow of the heat transfer fluid through the reservoir. In another version, the reservoir is an elongated channel having one or more of (i) serpentine convolutions, (ii) integral fins extending into the channel, (iii) a roughened internal surface, or (iv) a changing cross-section. A fluid outlet discharges the heat transfer fluid from the reservoir.

Abstract: An electrostatic chuck comprises a dielectric member comprising (i) a first layer comprising a semiconductive material, and (ii) a second layer over the first layer, the second layer comprising an insulative material. The insulative material has a higher electrical resistance than the semiconductive material. An electrode in the dielectric member is chargeable to generate an electrostatic force. The chuck is useful to hold substrates, such as semiconductor wafers, during their processing in plasma processes.

Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

Abstract: Various embodiments of the present invention are generally directed to a plasma etch reactor. In one embodiment, the reactor includes a chamber, a pedestal disposed within the chamber, a gas distribution plate disposed within the chamber overlying the pedestal, a ring surrounding the pedestal, and an upper electrically conductive mesh layer and a lower electrically conductive mesh layer disposed within the pedestal. The ring has a raised portion. The upper electrically conductive mesh layer is disposed substantially above the lower electrically conductive mesh layer and is substantially the same size as a substrate configured to be disposed on the pedestal. The lower electrically conductive mesh layer is substantially annular in shape and is disposed around the periphery of the upper electrically conductive mesh layer and below the raised portion of the ring.

Abstract: An electrostatic chuck 55 for holding a substrate 30 comprises an electrostatic member 100 made from a dielectric 115 covering an electrode 105 that is chargeable to electrostatically hold the substrate 30. A base 175 that includes a heater 235 is joined to the electrostatic member 100. The base may be made from a composite material, such as a porous ceramic infiltrated with the metal, and may be joined to the electrostatic member by a bond layer.

Abstract: A ceramic substrate support and methods for fabricating the same are provided. In one embodiment, a ceramic substrate support for supporting a substrate includes a ceramic body and a porous member disposed therein. The ceramic body generally has an upper portion and a lower portion. The upper portion includes a support surface while the lower portion includes a bottom surface. At least one passage is disposed in the lower portion of the ceramic body. A first end of the passage is at least partially closed by the upper portion of the ceramic body. At least one outlet is disposed through the portion of the ceramic body through the upper portion of the ceramic body and fluidly couples the passage to the support surface.

Abstract: An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about ±30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

Abstract: An electrostatic chuck 55 comprises an electrical connector 140 which is connected to the electrode 105 to conduct an electrical charge to the electrode 105. The electrical connector 140 comprises a refractory metal having a melting temperature of at least about 1500° C., such as for example, tungsten, titanium, nickel, tantalum, molybdenum, or alloys thereof. Preferably, the electrical connector 140 is bonded to the electrode 105 by a metal having a softening temperature of less than about 600° C., such as aluminum, indium, or low melting point alloys.

Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

Abstract: An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises an electrode 110 at least partially covered by a semiconducting dielectric 115, wherein the semiconducting dielectric 115 may have an electrical resistance of from about 5×109 &OHgr;cm to about 8×1010 &OHgr;cm.

Abstract: An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about ±30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.