Abstract: Embodiments of the present disclosure provide a patterning method and a semiconductor structure. The method includes: providing a substrate, wherein the substrate includes adjacent storage regions and peripheral circuit regions; forming, on the substrate, a pattern transfer layer, the pattern transfer layer having a plurality of first hard masks, wherein the first hard masks extend along a first direction and are spaced apart from each other; forming a barrier layer on the pattern transfer layer; forming, on the barrier layer, a plurality of second hard masks, the plurality of second hard masks extending along a second direction, wherein the second hard masks are spaced apart from each other, and the second hard masks are located in the storage regions and second hard masks close to the peripheral circuit regions have structural defects.

Abstract: A method for manufacturing a semiconductor structure includes: a first mask layer is formed on a dielectric layer, in which a first etching hole extending along a first direction parallel to the dielectric layer is formed in the first mask layer; a side of the first mask layer away from the dielectric layer is planarized; a second mask layer is formed on the first mask layer, in which a second etching hole extending along a second direction parallel to the dielectric layer is formed in the second mask layer, the first etching hole and the second etching hole constitute an etching hole; and the dielectric layer is etched along the etching hole to form the capacitor hole.

Abstract: The present disclosure discloses a capacitor structure and its formation method and a memory. The method includes: providing a substrate; forming an electrode support structure on the substrate in a stacking fashion, wherein the electrode support structure includes at least a first support layer on its top, a capacitor hole is formed at intervals within the electrode support structure and extends upwards in a direction perpendicular to a surface of the substrate; forming, within the capacitor hole, an electrode post and an electrode layer extending from the electrode post to the upper surface of the first support layer; removing the electrode layer; removing the first support layer; forming a dielectric layer on the top of the electrode support structure, wherein the dielectric layer covers the top of the electrode post, and an outer peripheral wall of the top of the electrode post is connected with the dielectric layer.

Abstract: A manufacturing method of a semiconductor structure is disclosed, which includes: an initial structure is provided; a filling layer covering a spacer is formed on the initial structure; a filling layer with a first preset thickness is removed at a high first etching rate through a first etching process, then a filling layer with a second preset thickness is removed at a low second etching rate through a second etching process, and the partial spacer is exposed; and the filling layer and the spacer are patterned.

Abstract: The disclosure relates to an electrical stimulation therapy method. The method includes applying a variable frequency stimulation pulse to target nerve tissue of the patient suffering from dysfunction of a nerve circuit in the brain selected from the group consisting of motor circuit, associative circuit and limbic circuit, wherein the variable frequency stimulation pulse comprises at least two kinds of electrical stimulation pulse trains at different frequencies; and each of the at least two kinds of alternate electrical stimulation pulse trains in each of the plurality of pulse train periods has a duration in a range from about 0.1 seconds to about 60 minutes. The target nerve tissue is a part of the nerve circuit. The different frequencies of the electrical stimulation pulse trains are in a range from about 10 Hz to about 250 Hz.

Abstract: The disclosure relates to an electrical stimulation therapy method. The method includes applying a variable frequency stimulation pulse to target nerve tissue of the patient suffering from dysfunction of a nerve circuit in the brain selected from the group consisting of motor circuit, associative circuit and limbic circuit, wherein the variable frequency stimulation pulse comprises at least two kinds of electrical stimulation pulse trains at different frequencies; and each of the at least two kinds of alternate electrical stimulation pulse trains in each of the plurality of pulse train periods has a duration in a range from about 0.1 seconds to about 60 minutes. The target nerve tissue is a part of the nerve circuit. The different frequencies of the electrical stimulation pulse trains are in a range from about 10 Hz to about 250 Hz.

Abstract: The disclosure relates to an electrical stimulation therapy method. The method includes applying a variable frequency stimulation pulse to target nerve tissue of the patient, wherein the variable frequency stimulation pulse comprises at least two kinds of electrical stimulation pulse trains at different frequencies; the at least two kinds of electrical stimulation pulse trains alternately stimulate target nerve tissue and form a plurality of pulse train periods; and each of the at least two kinds of alternate electrical stimulation pulse trains in each of the plurality of pulse train periods has a duration in a range from about 0.1 seconds to about 60 minutes. An implantable medical device for generating the variable frequency stimulation pulse is also related.

Abstract: The disclosure relates to an electrical stimulation therapy method. The method includes applying a variable frequency stimulation pulse to target nerve tissue of the patient, wherein the variable frequency stimulation pulse comprises at least two kinds of electrical stimulation pulse trains at different frequencies; the at least two kinds of electrical stimulation pulse trains alternately stimulate target nerve tissue and form a plurality of pulse train periods; and each of the at least two kinds of alternate electrical stimulation pulse trains in each of the plurality of pulse train periods has a duration in a range from about 0.1 seconds to about 60 minutes. An implantable medical device for generating the variable frequency stimulation pulse is also related.