Abstract: In the present application, a tunnel oxide layer is deposited by means of a combination of PECVD and PEALD. A thin oxide layer with a thickness of 0.1 nm to 0.5 nm is pre-deposited by means of PECVD. In a subsequent PEALD process, the thin oxide layer chemically passivates a surface of a substrate, and then the PEALD process is configured to uniformly deposit a tunnel oxide layer on the basis of the oxide layer. The basic principle of such growth mode is atomic layer deposition.

Abstract: The examples of the present disclosure provide a semiconductor device and a manufacturing method thereof, and a memory system. The semiconductor device comprises a first electrode and a first insulating layer. The first electrode extends along a first direction and comprises a first end surface, a second end surface, and a sidewall. The first end surface and the second end surface are oppositely arranged in the first direction, and the sidewall connects the first end surface with the second end surface. The first insulating layer surrounds at least a portion of a sidewall of a first end portion of the first electrode and is located on a side of the first end surface away from the second end surface.

Abstract: Examples of the present disclosure provide a semiconductor device and a manufacturing method thereof. The semiconductor device includes a semiconductor body, a capacitor, and a first connection structure. The semiconductor body extends along a first direction. The capacitor is located on a side of the semiconductor body in the first direction. The first connection structure is located between the semiconductor body and the capacitor, and includes a first end and a second end arranged in the first direction. The first end is connected to the capacitor, and a size of the first end in a second direction is smaller than a size of the second end in the second direction.

Abstract: Semiconductor devices and fabricating methods are provided. In some implementations, a disclosed semiconductor device includes an array of vertical transistors, and an array of vertical capacitors. Each of the vertical capacitors includes a first electrode structure coupled with a corresponding one of the array of vertical transistors, and a second electrode structure electrically isolated from the first electrode structure. The first electrode structure has a first uneven sidewall along a vertical direction and facing the second electrode structure.

Abstract: The present disclosure relates to storage node contact structures in semiconductor devices and fabrication methods thereof. An example semiconductor device includes an array of memory cells. The array of memory cells includes a first row of memory cells arranged along a first direction. At least one memory cell of the first row of memory cells includes a first vertical transistor, a first storage node contact structure, and a first storage structure that are stacked along a second direction perpendicular to the first direction. The first storage node contact structure includes a first top portion in contact with the first storage structure and a first bottom portion in contact with the first vertical transistor. A first top cross section of the first top portion is asymmetric.

Abstract: A high vacuum container includes an inner container body, an outer container body, a first group of supporting devices and a second group of supporting devices. Each group of supporting devices includes four supporting assemblies, and two supporting assemblies are disposed at the upper portion of the high vacuum container, and the other two are disposed at the lower portion of the high vacuum container. Each supporting assembly includes a base plate welded at outer surface of the inner container body and a heat insulating pipe extending along a radial direction of the high vacuum container, one end of the heat insulating pipe abutting against the base plate. Each supporting assembly at the lower portion further includes a fixing element, and each fixing element partly is partly inserted into the outer container body through the opening on the outer container body.

Abstract: A high vacuum container includes an inner container body, an outer container body, a first group of supporting devices and a second group of supporting devices. Each group of supporting devices includes four supporting assemblies, and two supporting assemblies are disposed at the upper portion of the high vacuum container, and the other two are disposed at the lower portion of the high vacuum container. Each supporting assembly includes a base plate welded at outer surface of the inner container body and a heat insulating pipe extending along a radial direction of the high vacuum container, one end of the heat insulating pipe abutting against the base plate. Each supporting assembly at the lower portion further includes a fixing element, and each fixing element partly is partly inserted into the outer container body through the opening on the outer container body.

Abstract: An upper-bearing typed movable formwork used for cast-in-situ of concrete box girder in bridge engineering, comprising left and right legs (7) which are respectively fixed on a pier, left and right longitudinal/transverse sliding mechanisms (9), bearing devices and a template system.

Abstract: An upper-bearing typed movable formwork used for cast-in-situ of concrete box girder in bridge engineering, comprising left and right legs (7) which are respectively fixed on a pier, left and right longitudinal/transverse sliding mechanisms (9), bearing devices and a template system.