Abstract: A system includes a cooler, a concentration meter, a first pump and a second pump. The cooler is configured to cool first liquid by second liquid in the cooler. The concentration meter is configured to measure a concentration of the first liquid. The first pump is configured to move the first liquid according to the concentration. The second pump is coupled to the cooler, disposed with the first pump in a parallel manner, and configured to move the second liquid.

Abstract: In an embodiment, a method includes: spinning a wafer around an axis of rotation at a center of the wafer; applying a first stream of liquid along a line starting from an initial point on the wafer adjacent to the center of the wafer, through the center of the wafer, and ending at an edge of the wafer; applying a second stream of liquid to an inner third of the line starting at the initial point and ending at a boundary point; applying a third stream of liquid to a middle third of the line starting at the boundary point; applying a fourth stream of liquid to an outer third of the line ending at the edge of the wafer; applying a fifth stream of liquid along the line starting from the initial point and ending at the edge of the wafer; and applying a stream of gas along the line starting from the initial point and ending at the edge of the wafer.

Abstract: A system includes a cleaning device and a concentration measuring device. The cleaning device includes a first pipe and a first pump. The first pump is configured to move first liquid in the first pipe. Two terminals of the first pump are respectively coupled to the first pipe. The concentration measuring device includes a tube, a cooler, a concentration meter and a second pump. The tube is coupled to the first pipe, and is configured to retrieve the first liquid. The cooler covers the tube to cool the first liquid. The concentration meter is configured to measure a concentration of the first liquid cooled by the cooler. The second pump is coupled to the tube, and is configured to move the first liquid according to the concentration.

Abstract: In an embodiment, a method includes: spinning a wafer around an axis of rotation at a center of the wafer; applying a first stream of liquid along a line starting from an initial point on the wafer adjacent to the center of the wafer, through the center of the wafer, and ending at an edge of the wafer; applying a second stream of liquid to an inner third of the line starting at the initial point and ending at a boundary point; applying a third stream of liquid to a middle third of the line starting at the boundary point; applying a fourth stream of liquid to an outer third of the line ending at the edge of the wafer; applying a fifth stream of liquid along the line starting from the initial point and ending at the edge of the wafer; and applying a stream of gas along the line starting from the initial point and ending at the edge of the wafer.

Abstract: In an embodiment, a method includes: spinning a wafer around an axis of rotation at a center of the wafer; applying a first stream of liquid along a line starting from an initial point on the wafer adjacent to the center of the wafer, through the center of the wafer, and ending at an edge of the wafer; applying a second stream of liquid to an inner third of the line starting at the initial point and ending at a boundary point; applying a third stream of liquid to a middle third of the line starting at the boundary point; applying a fourth stream of liquid to an outer third of the line ending at the edge of the wafer; applying a fifth stream of liquid along the line starting from the initial point and ending at the edge of the wafer; and applying a stream of gas along the line starting from the initial point and ending at the edge of the wafer.

Abstract: A system includes a cleaning device and a concentration measuring device. The cleaning device includes a first pipe and a first pump. The first pump is configured to move first liquid in the first pipe. Two terminals of the first pump are respectively coupled to the first pipe. The concentration measuring device includes a tube, a cooler, a concentration meter and a second pump. The tube is coupled to the first pipe, and is configured to retrieve the first liquid. The cooler covers the tube to cool the first liquid. The concentration meter is configured to measure a concentration of the first liquid cooled by the cooler. The second pump is coupled to the tube, and is configured to move the first liquid according to the concentration.

Abstract: A system is disclosed herein. The system includes a tank, a tube, a cooler, and a concentration meter. The tank is configured to contain first liquid. The tube is coupled to the tank and configured to convey the first liquid from the tank. The cooler covers the tube to cool the first liquid conveyed by the tube. The concentration meter is configured to measure a concentration of the first liquid cooled by the cooler.

Abstract: A system is disclosed herein. The system includes a tank, a tube, a cooler, and a concentration meter. The tank is configured to contain first liquid. The tube is coupled to the tank and configured to convey the first liquid from the tank. The cooler covers the tube to cool the first liquid conveyed by the tube. The concentration meter is configured to measure a concentration of the first liquid cooled by the cooler.

Abstract: In an embodiment, a method includes: spinning a wafer around an axis of rotation at a center of the wafer; applying a first stream of liquid along a line starting from an initial point on the wafer adjacent to the center of the wafer, through the center of the wafer, and ending at an edge of the wafer; applying a second stream of liquid to an inner third of the line starting at the initial point and ending at a boundary point; applying a third stream of liquid to a middle third of the line starting at the boundary point; applying a fourth stream of liquid to an outer third of the line ending at the edge of the wafer; applying a fifth stream of liquid along the line starting from the initial point and ending at the edge of the wafer; and applying a stream of gas along the line starting from the initial point and ending at the edge of the wafer.