Abstract: A multi-level converter control method is provided that includes: acquiring an inductive current of an LC filter in a driving pulse period; determining a to-be-adjusted first switch tube and a first duty ratio adjustment amount of the to-be-adjusted first switch tube based on a slope of a rising period of the inductive current, and adjusting a duty ratio of the to-be-adjusted first switch tube based on the first duty ratio adjustment amount; and determining a to-be-adjusted second switch tube and a second duty ratio adjustment amount of the to-be-adjusted second switch tube based on a slope of a falling period of the inductive current, and adjusting a duty ratio of the to-be-adjusted second switch tube based on the second duty ratio adjustment amount.

Abstract: The present application provides a trisection power divider with isolation and a microwave transmission system, where the divider includes a first hybrid ring coupler with a distribution ratio of 1:2 and a second hybrid ring coupler with a distribution ratio of 1:1; a first port of the first hybrid ring coupler is a signal input port; a second port of the first hybrid ring coupler is connected with a first port of the second hybrid ring coupler; a second port of the second hybrid ring coupler, a third port of the second hybrid ring coupler and a third port of the first hybrid ring coupler are three signal output ports of the divider; and the second port of the first hybrid ring coupler is a port with high power.

Abstract: The present application provides a trisection power divider with isolation and a microwave transmission system, where the divider includes a first hybrid ring coupler with a distribution ratio of 1:2 and a second hybrid ring coupler with a distribution ratio of 1:1; a first port of the first hybrid ring coupler is a signal input port; a second port of the first hybrid ring coupler is connected with a first port of the second hybrid ring coupler; a second port of the second hybrid ring coupler, a third port of the second hybrid ring coupler and a third port of the first hybrid ring coupler are three signal output ports of the divider; and the second port of the first hybrid ring coupler is a port with high power.

Abstract: The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis.

Abstract: A method for calibrating crosstalk errors in a system for measuring on-wafer S parameters and an electronic device are provided. The method includes two parts. The first part is the pre-calibration part, which obtain eight error terms of an on-wafer S parameter measurement system by using a thru calibration standard, two defined load calibration standards, two pairs of undefined reflect calibration standards, and the reciprocity properties of a passive reciprocal element. The first part performs pre-calibration on an uncalibrated system according to the eight error terms. The second part uses the pre-calibrated system to obtain the crosstalk errors of the measurement system, and performs a further calibration on the pre-calibrated system according to the crosstalk errors.

Abstract: A multi-level converter control method is provided that includes: acquiring an inductive current of an LC filter in a driving pulse period; determining a to-be-adjusted first switch tube and a first duty ratio adjustment amount of the to-be-adjusted first switch tube based on a slope of a rising period of the inductive current, and adjusting a duty ratio of the to-be-adjusted first switch tube based on the first duty ratio adjustment amount; and determining a to-be-adjusted second switch tube and a second duty ratio adjustment amount of the to-be-adjusted second switch tube based on a slope of a falling period of the inductive current, and adjusting a duty ratio of the to-be-adjusted second switch tube based on the second duty ratio adjustment amount.

Abstract: The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis.

Abstract: Disclosed is an apparatus for preparing a large-size single crystal, which relates to the field of semiconductor material preparation, and more particularly, to an apparatus for preparing a large-size single crystal from a plurality of small-size single crystals by connecting them in solid states. The apparatus includes a hydrocooling furnace, a solid connection chamber hermetically disposed in the hydrocooling furnace, and combined fixtures provided in the solid connection chamber, wherein a plurality of crystal pieces are fixed by the combined fixtures, a top column or a stress block is used for pressing the crystal piece through the combined fixtures, a heating wire surrounding the solid connection chamber is provided in the hydrocooling furnace, a vacuum tube is communicated with the solid connection chamber, and a thermocouple is disposed close to the combined fixtures.