Patents by Inventor Seng Ghee Tan

Seng Ghee Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magneto-electric field effect transistor for spintronic applications
    Patent number: 7960757
    Abstract: The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detect spin polarized electrons; and a gate comprising at least one magnetic double pair element comprising four magnetic elements each magnetic element being adapted to induce a magnetic field into the channel region, wherein the total induced magnetic field of the magnetic double pair element is controllable to be substantially zero, and wherein the gate is further adapted to induce an electrical field into the channel region.
    Type: Grant
    Filed: April 27, 2004
    Date of Patent: June 14, 2011
    Assignee: Agency for Science, Technology and Research
    Inventors: Mansoor B A Jalil, Seng Ghee Tan, Tow Chong Chong, Yun Fook Liew, Kie Leong Teo
  • Magneto-Electric Field Effect Transistor for Spintronic Applications
    Publication number: 20110042720
    Abstract: The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detect spin polarized electrons; and a gate comprising at least one magnetic double pair element comprising four magnetic elements each magnetic element being adapted to induce a magnetic field into the channel region, wherein the total induced magnetic field of the magnetic double pair element is controllable to be substantially zero, and wherein the gate is further adapted to induce an electrical field into the channel region.
    Type: Application
    Filed: April 27, 2004
    Publication date: February 24, 2011
    Applicant: Agency for Science, Technology and Research
    Inventors: Mansoor B. A. Jalil, Seng Ghee Tan, Tow Chong Chong, Yun Fook Liew, Kie Leong Teo
  • Method and apparatus for high throughput media defect testing using true reference value
    Patent number: 6366081
    Abstract: A method and apparatus are provided for efficiently testing magnetic media in which a read level test is performed using an approximation for an average signal level in determining a test threshold and while reading data and testing against the approximate average read signal level, the data signal level is averaged to determine the real average read signal and this value is then used to adjust the results of the comparisons performed against the approximate average read level.
    Type: Grant
    Filed: February 25, 2000
    Date of Patent: April 2, 2002
    Assignee: Data Storage Institute
    Inventors: Seng Ghee Tan, Thomas Yun Fook Liew, Teck Ee Loh, Udaya Ahangama W. Silva