Patents by Inventor Seng-Hsiung Wu

Seng-Hsiung Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of reducing trench aspect ratio
    Patent number: 6861333
    Abstract: A method of reducing trench aspect ratio. A trench is formed in a substrate. Using HDP-CVD, a conformal first oxide layer is formed on a surface of the trench. A conformal first nitride layer is formed on the first oxide layer. Part of the first nitride layer is removed to cause the first nitride layer to be lower than a top surface of the substrate. Using a BOE solution, the first nitride layer and part of the first oxide layer are removed to leave a remaining first oxide layer on the lower portion of the surface of the trench. Thus, the trench aspect ratio is reduced.
    Type: Grant
    Filed: December 4, 2003
    Date of Patent: March 1, 2005
    Assignee: Nanya Technology Corporation
    Inventors: Chang-Rong Wu, Seng-Hsiung Wu, Yi-Nan Chen
  • Method of reducing trench aspect ratio
    Publication number: 20040192010
    Abstract: A method of reducing trench aspect ratio. A trench is formed in a substrate. Using HDP-CVD, a conformal first oxide layer is formed on a surface of the trench. A conformal first nitride layer is formed on the first oxide layer. Part of the first nitride layer is removed to cause the first nitride layer to be lower than a top surface of the substrate. Using a BOE solution, the first nitride layer and part of the first oxide layer are removed to leave a remaining first oxide layer on the lower portion of the surface of the trench. Thus, the trench aspect ratio is reduced.
    Type: Application
    Filed: December 4, 2003
    Publication date: September 30, 2004
    Inventors: Chang-Rong Wu, Seng-Hsiung Wu, Yi-Nan Chen