Abstract: Provided are a plasma processing method and a substrate processing apparatus. The plasma processing method includes mounting at least one first plasma source and at least one second plasma source on a chamber, supplying a first gas to the first plasma source, supplying a second gas different from the first gas to the second plasma source, applying power to the first plasma source to generate first plasma, applying power to the second plasma source to generate second plasma, and processing a substrate disposed inside the chamber using the first and second plasma.

Abstract: There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.

Abstract: There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.

Abstract: An embossing chuck has an embossing part protruding, in a uniform height, from an upper surface of a body on which the wafer is put on. When viewed from the above, an area of the embossing part is 5˜30% for a total area of the body. According to the chuck, since most of the charges existing in the chuck are concentrated at the embossing part and escape through the embossing part, when the embossing part is provided, the electrostatic force attracting the wafer becomes weak, as compared to a case where the embossing part is not provided to the chuck. Therefore, it is possible to easily detach the wafer from the chuck.