Patents by Inventor Senji Shimanuki
Senji Shimanuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6238481Abstract: A method of manufacturing an ultrasonic probe includes the steps of forming electrodes on two surfaces of a piezoelectric single crystal made of a complex perovskite compound and then adhering the piezoelectric single crystal on a backing material, dicing the piezoelectric single crystal to form an arrayed piezoelectric single-crystal transducer, and poling the arrayed piezoelectric single-crystal transducer in the electric field of 0.5 to 2 kV/mm at a temperature of 80° C. or less.Type: GrantFiled: May 28, 1999Date of Patent: May 29, 2001Assignee: Kabushiki Kaisha ToshibaInventors: Yohachi Yamashita, Tsuyoshi Kobayashi, Shiroh Saitoh, Kouichi Harada, Senji Shimanuki
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Patent number: 6153967Abstract: An ultrasonic probe has strip-formed oscillators formed of a piezoelectric crystal material arranged in an array form. Metal layers are formed by a first layer of at least one of Ti, Ni and Cr, a second layer of at least one of Cu and Ni, and a third layer of at least one of Cu, Au, Pt, Ag and Pd. A backing material is fixed to the oscillators through the metal layers. With this structure, it is possible to manufacture an ultrasonic probe having a high sensitivity while maintaining a favorable dicing process, even while using a backing material having a low acoustic impedance and soft properties.Type: GrantFiled: September 24, 1998Date of Patent: November 28, 2000Assignee: Kabushiki Kaisha ToshibaInventors: Tsuyoshi Kobayashi, Shiroh Saitoh, Yohachi Yamashita, Senji Shimanuki, Kouichi Harada
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Patent number: 6020675Abstract: An ultrasonic probe provided with an ultrasonic wave-transmitting/receiving element comprising a 1-3 type or 2-2 type composite piezoelectric body exposing a piezoelectric monocrystal from at least one of the faces of the composite piezoelectric body, and an electrode mounted on at least one of the faces of the composite piezoelectric body, wherein the composite piezoelectric body comprises a piezoelectric monocrystal whose electromechanical coupling coefficient ratio k.sub.33 /k.sub.t is 1.6 or more, and a resin whose acoustic impedance Zp is 4.times.10.sup.6 kg/m.sup.2 s or less.Type: GrantFiled: March 11, 1998Date of Patent: February 1, 2000Assignee: Kabushiki Kaisha ToshibaInventors: Yohachi Yamashita, Senji Shimanuki, Kouichi Harada, Shiroh Saitoh, Mamoru Izumi, Tsuyoshi Kobayashi, Masaru Kawachi
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Patent number: 5739943Abstract: Light beams emitted from an optical fiber are converted into parallel light beams by a lens, and then allowed to pass through a Faraday device, followed by being converged to an incident end of the optical fiber by a lens. The Faraday device is applied with a magnetic field in a direction of the optical axis thereof from a coil. Moreover, the Faraday device is applied with a magnetic field in a direction perpendicular to the optical axis by a pair of magnets. When an electric current flowing in a coil 74 is changed from I to -I, the direction of a synthesized magnetic field can be rotated. Therefore, by arbitrarily changing the electric current flowing in the coil, polarization of transmission light can be controlled.Type: GrantFiled: August 23, 1996Date of Patent: April 14, 1998Assignees: Kabushiki Kaisha Toshiba, Kokusai Denshin Denwa Co., Ltd.Inventors: Shigeru Ohshima, Tazuko Tomioka, Mitsuko Nakamura, Senji Shimanuki, Manish Sharma, Hiroyuki Ibe, Hitoshi Takahira, Shu Yamamoto
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Patent number: 5402791Abstract: Disclosed is a piezoelectric single crystal which has a large electromechanical coupling coefficient and hardly brings about depolarization due to the effect of heat in, e.g., the steps of manufacturing an ultrasonic transmitting/receiving element. The piezoelectric single crystal consists essentially of a general formula:Pb{[M1.sub.1/3 Nb.sub.(2/3)-(2z/3) Ta.sub.2z/3 ].sub.1-x-y Ti.sub.x M2.sub.y }O.sup. 3wherein M1 represents at least one metal selected from the group consisting of Zn, Ni, and Mg, M2 represents at least one metal selected from the group consisting of Pt, Fe, Bi, Rh, and Ir, and x, y, and z are defined as 0.05.ltoreq.x.ltoreq.0.2, 0.00001.ltoreq.y.ltoreq.0.01, and 0.ltoreq.z.ltoreq.0.1, respectively.Type: GrantFiled: August 5, 1994Date of Patent: April 4, 1995Assignee: Kabushiki Kaisha ToshibaInventors: Shiroh Saitoh, Mamoru Izumi, Yohachi Yamashita, Senji Shimanuki, Masaru Kawachi, Tsuyoshi Kobayashi
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Patent number: 5295487Abstract: An ultrasonic probe includes an ultrasonic transmitting/receiving element which uses a piezoelectric member constituted by a solid-solution based single crystal of zinc lead niobate-lead titanate, so that low-frequency driving can be achieved, the thickness of the piezoelectric member in the direction of vibration can be decreased, matching with a transmitting/receiving circuit can be easily made, and the sensitivity can be improved. The ultrasonic probe includes an ultrasonic transmitting/receiving element having a piezoelectric member constituted by a solid-solution based single crystal of zinc lead niobate-lead titanate and a pair of electrodes formed on an ultrasonic transmitting/receiving surface of the piezoelectric member and a surface opposite to the transmitting/receiving surface, respectively.Type: GrantFiled: February 9, 1993Date of Patent: March 22, 1994Assignee: Kabushiki Kaisha ToshibaInventors: Shiroh Saitoh, Mamoru Izumi, Senji Shimanuki, Shinichi Hashimoto, Yohachi Yamashita
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Patent number: 4896103Abstract: The magnetic field sensor is described for sensing the magnetic field, which comprises a light source part, a magnetic field detection part which contains a magnetooptic element consisting of a magnetic materials having a magnetooptic effect, and a light measurement part which measures the light that has been radiated from the light source part and has passed through the magnetic field detection part, is characterized in that the magnetooptic element is arranged such that its easy axis of magnetization is at substantially right angles to the direction of the magnetic field to be measured. The sensor can measure in a wide range of magnetic field with a high degree of accuracy and high sensitivity.Type: GrantFiled: April 11, 1988Date of Patent: January 23, 1990Assignee: Kabushiki Kaisha ToshibaInventors: Senji Shimanuki, Susumu Hashimoto, Shunji Nomura, Tomohisa Yamashita
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Patent number: 4832980Abstract: According to a disk-shaped magneto-optical recording medium of the invention, a transparent thin film serving as an interference layer is formed on a transparent substrate. The thin film is subjected to a plasma surface treatment, thereby decreasing the fused oxygen content in at least a surface portion thereof. A recording layer of a rare-earth-transition metal amorphous ferrimagnetic alloy thin film is formed on the plasma surface-treated film. Since the content of active, fused oxygen contained in at least the surface portion of the film decreases, rare-earth element oxide can hardly be formed in a boundary region between the recording layer and the transparent thin film. The content of the rare-earth element in this region is smaller than the average content in the overall recording layer.Type: GrantFiled: August 27, 1987Date of Patent: May 23, 1989Assignee: Kabushiki Kaisha ToshibaInventors: Katsutarou Ichihara, Nobuaki Yasuda, Yoshiaki Terashima, Senji Shimanuki
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Patent number: 4428416Abstract: A method for manufacturing a multi-layer amorphous alloy having at least one layer of amorphous alloy, comprises the steps of ejecting a first molten metal on one of a pair of rollers rotating at a high speed, and rotating the ejected metal with the roller in a shape of a layer for rapid cooling; forming two molten metal layers on the rotating roller or belt by ejecting a second molten metal different from the first metal on the first molten metal for rapid cooling; and adhering under pressure and rolling the molten metal layers between the pair of rollers; and the method of the present invention is applicable to the manufacture of multi-layer alloys which may be used as various composite alloy materials such as high-sensitivity bimetals, superconductive wires, contact spring composite alloys, latching relays having two-stepped magnetic hysteresis, and high fidelty magnetic heads.Type: GrantFiled: June 21, 1983Date of Patent: January 31, 1984Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Senji Shimanuki, Koichiro Inomata
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Patent number: 4385932Abstract: An amorphous magnetic alloy has a general formula:(Fe.sub.1-a.Ni.sub.a).sub.100-x-y.Si.sub.x.B.sub.ywhere0.2.ltoreq.a.ltoreq.0.71.ltoreq.x.ltoreq.205.ltoreq.y.ltoreq.9.515.ltoreq.x+y.ltoreq.29.5The alloy is low in iron loss and suitable for forming a magnetic core used under a high frequency.Type: GrantFiled: June 4, 1981Date of Patent: May 31, 1983Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Koichiro Inomata, Michio Hasegawa, Senji Shimanuki, Masakatsu Haga
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Patent number: 4225339Abstract: An amorphous alloy of high magnetic permeability, having a general formula;(T.sub.y Nb.sub.x A.sub.1-x-y).sub.100-z X.sub.zwhere,"A" is at least one kind selected from the group consisting of 0.5 to 10 atomic % of V, Ta, Ti, Zr, Cr, Mo, W and 0.5 to 30 atomic % of Ni based on the total amount of T, Nb and A,"T" is at least one element selected from the group of Fe and Co,"X" is B or B+Si, the amount of Si being at most 25 atomic % based on the total amount of the alloy,"x" ranges between 0.005 and 0.1,"y" ranges between 0.5 and 0.99, and"z" ranges between 15 and 35, with the proviso of 0.005.ltoreq.1-x-y.ltoreq.0.4.Type: GrantFiled: December 15, 1978Date of Patent: September 30, 1980Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Koichiro Inomata, Senji Shimanuki, Michio Hasegawa