Patents by Inventor Senthilkumar Arthanari

Senthilkumar Arthanari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Shallow trench isolation using non-conformal dielectric and planarizatrion
    Patent number: 6541349
    Abstract: A method is provided for planarizing a structure such as a shallow trench isolation region on a semiconductor substrate. A semiconductor substrate is provided having raised and lowered regions with substantially vertical and horizontal surfaces. The lowered regions may correspond to trench regions. The upper regions are covered by a masking layer of nitride having a predetermined thickness. Filler material such as non-conformal high density plasma oxide may be deposited over the horizontal surfaces to a thickness terminating within that of the thickness of the nitride layer. The raised regions of the filler material are then selectively removed in a single planarizing step without removing the filler material in the lowered regions using a fixed abrasive hard polishing pad, as opposed to an abrasive slurry.
    Type: Grant
    Filed: January 18, 2001
    Date of Patent: April 1, 2003
    Assignee: International Business Machines Corporation
    Inventors: Senthilkumar Arthanari, Shaw-Ning Mei, Edward J. Vishnesky
  • Shallow trench isolation using non-conformal dielectric material and planarizatrion
    Publication number: 20020094649
    Abstract: A method is provided for planarizing a structure such as a shallow trench isolation region on a semiconductor substrate. A semiconductor substrate is provided having raised and lowered regions with substantially vertical and horizontal surfaces. The lowered regions may correspond to trench regions. The upper regions are covered by a masking layer of nitride having a predetermined thickness. Filler material such as non-conformal high density plasma oxide may be deposited over the horizontal surfaces to a thickness terminating within that of the thickness of the nitride layer. The raised regions of the filler material are then selectively removed in a single planarizing step without removing the filler material in the lowered regions using a fixed abrasive hard polishing pad, as opposed to an abrasive slurry.
    Type: Application
    Filed: January 18, 2001
    Publication date: July 18, 2002
    Applicant: International Business Machines Corporation
    Inventors: Senthilkumar Arthanari, Shaw-Ning Mei, Edward J. Vishnesky