Abstract: A device for filtering out an object includes a camera sensor that captures an image of the surroundings of a vehicle. The device includes a controller that recognizes the object and a road area in the image, determines a target area corresponding to the object, determines whether or not the object is a misrecognized object based on the target area, and deletes the misrecognized object from the image.

Abstract: An apparatus and method for detecting an object and a computer readable recording medium therefor are disclosed. The apparatus includes: a first camera that obtains a first image of a first view angle range; a second camera that obtains a second image of a second view angle range having an overlapping region with the first view angle range; an object detection network that detects an object in the first and second images; a stereo matching device that corrects a deviation of a depth value between the first and second images in the overlapping region based on a feature value output by a backbone network of the object detection network; and a feature vector determination device that performs adversarial learning to reduce a deviation of a feature vector between objects in the overlapping region and a non-overlapping region while the object detection network detects the object.

Abstract: An apparatus and method for manufacturing microneedle using electrohydrodynamic printing are provided. The apparatus includes a substrate on which a printed microneedle is placed, a nozzle unit receiving a base material, which is a biocompatible material, as ink and discharging the ink to the substrate, a power unit supplying power to the nozzle unit, and a controller controlling the power unit so that the ink is dropped from the nozzle unit.

Abstract: Provided is a magnetic memory device for applying an in-plane current to a conductive wire adjacent to a free magnetic layer having an in-plane magnetic anisotropy to induce a flux reversal of the free magnetic layer and simultaneously applying a voltage to each magnetic tunnel junction cell selectively to reverse magnetization of the free magnetic layer selectively at each specific voltage. The magnetic memory device may implement high density integration by reducing a volume since a spin-hall spin-torque causing a flux reversal is generated at an interface of the conductive wire and the free magnetic layer, ensure thermal stability by enhancing perpendicular magnetic anisotropy of the magnetic layer, and reduce a critical current density by increasing an amount of spin current. In addition, by increasing tunnel magnetic resistance with a thick insulating body, the magnetic memory device may increase a reading rate without badly affecting the critical current density.

Abstract: Provided is a magnetic memory device for applying an in-plane current to a conductive wire adjacent to a free magnetic layer having a perpendicular magnetic anisotropy to induce a flux reversal of the free magnetic layer and simultaneously applying a voltage to each magnetic tunnel junction cell selectively to reverse magnetization of the free magnetic layer selectively at each specific voltage. The magnetic memory device may implement high density integration by reducing a volume since a spin-hall spin-torque causing a flux reversal is generated at an interface of the conductive wire and the free magnetic layer, ensure thermal stability by enhancing perpendicular magnetic anisotropy of the magnetic layer, and reduce a critical current density by increasing an amount of spin current. In addition, by increasing tunnel magnetic resistance with a thick insulating body, the magnetic memory device may increase a reading rate without badly affecting the critical current density.

Abstract: Provided is a magnetic memory device for applying an in-plane current to a conductive wire adjacent to a free magnetic layer having an in-plane magnetic anisotropy to induce a flux reversal of the free magnetic layer and simultaneously applying a voltage to each magnetic tunnel junction cell selectively to reverse magnetization of the free magnetic layer selectively at each specific voltage. The magnetic memory device may implement high density integration by reducing a volume since a spin-hall spin-torque causing a flux reversal is generated at an interface of the conductive wire and the free magnetic layer, ensure thermal stability by enhancing perpendicular magnetic anisotropy of the magnetic layer, and reduce a critical current density by increasing an amount of spin current. In addition, by increasing tunnel magnetic resistance with a thick insulating body, the magnetic memory device may increase a reading rate without badly affecting the critical current density.

Abstract: A semiconductor package improves reliability of heat emitting performance by maintaining a heat emitting lid stacked on a top surface of a semiconductor chip at a tightly adhered state. A highly adhesive interface material and a thermal interface material are applied to the top surface of the semiconductor chip. The highly adhesive interface material insures that the heat emitting lid is bonded to the top surface while the thermal interface material insures excellent heat transfer between the top surface and the heat emitting lid.