Patents by Inventor Seog CHAE
Seog CHAE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10926118Abstract: A safety handle of a fire extinguisher includes a lower handle coupled to an upper end of a valve and having a first hinge shaft at one end thereof and a first support shaft parallel to the first hinge shaft at a point spaced from the first hinge shaft. An upper handle is coupled to the lower handle to be rotatable around the first hinge shaft and downwardly rotate around the first hinge shaft to push an open pin of the fire extinguisher. A second support shaft is parallel to the first hinge shaft at one point. A safety pin prevents the upper handle from rotating. A first link having a first end of a length direction is coupled to the first support shaft to be rotatable around the first support shaft. A second link having a first end of a length direction is coupled to the second support shaft.Type: GrantFiled: May 24, 2016Date of Patent: February 23, 2021Assignee: TOP ENGINEERING AND CONSTRUCTION CO., LTD.Inventors: Hojae Choi, Seungwook Han, Kooksang Sim, Seongdae Choi, Seog Chae
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Publication number: 20190001168Abstract: A safety handle of a fire extinguisher according to the present invention comprises: a lower handle which is coupled to an upper end of a valve and has a first hinge shaft at one end thereof and a first support shaft parallel to the first hinge shaft at a point spaced apart from the first hinge shaft; an upper handle which is coupled to the lower handle to be rotatable around the first hinge shaft, downwardly rotates around the first hinge shaft so as to push an open pin of the fire extinguisher, and is provided with a second support shaft parallel to the first hinge shaft at one point; a safety pin for preventing the upper handle from rotating; a first link having a first end of a length direction coupled to the first support shaft to be rotable around the first support shaft; a second link having a first end of a length direction coupled to the second support shaft to be rotatable around the second support shaft; and a second hinge shaft to which a second end opposite to the first end of the first link andType: ApplicationFiled: May 24, 2016Publication date: January 3, 2019Applicant: TOP ENGINEERING AND CONSTRUCTION CO.,LTD.Inventors: Hojae CHOI, Seungwook HAN, Kooksang SIM, Seongdae CHOI, Seog CHAE
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Patent number: 7291860Abstract: A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line.Type: GrantFiled: November 4, 2003Date of Patent: November 6, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Cheol-Soo Jung, Young-Sun Kim, Ho-Joon Lee, Yeong-Hwan Cho, Hyeon-Hwan Kim, Bung-Hyuk Min, Woon-Yong Park, Il-Gon Kim, Jang-Soo Kim, Jin-Oh Kwag, Seog-Chae Lee
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Publication number: 20040090566Abstract: A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line.Type: ApplicationFiled: November 4, 2003Publication date: May 13, 2004Inventors: Cheol-Soo Jung, Young-Sun Kim, Ho-Joon Lee, Yeong-Hwan Cho, Hyeon-Hwan Kim, Bung-Hyuk Min, Woon-Yong Park, Il-Gon Kim, Jang-Soo Kim, Jin-Oh Kwag, Seog-Chae Lee
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Patent number: 6657231Abstract: A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line.Type: GrantFiled: June 17, 2002Date of Patent: December 2, 2003Assignee: Samsung Electronics Co., Ltd.Inventors: Cheol-Soo Jung, Young-Sun Kim, Ho-Joon Lee, Yeong-Hwan Cho, Hyeon-Hwan Kim, Bung-Hyuk Min, Woon-Yong Park, Il-Gon Kim, Jang-Soo Kim, Jin-Oh Kwag, Seog-Chae Lee
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Patent number: 6590624Abstract: Test thin film transistors are provided outside of the pixel region of an LCD panel that includes an array of pixel thin film transistors and intersecting arrays of spaced apart data lines and gate lines connected to the array of pixel thin film transistors. A respective test thin film transistor is connected to a respective one of the data lines or gate lines. At least subgroups of the test thin film transistors are commonly connected to provide common energization of subgroups of data lines or test lines for gross testing of the LCD panels. Rubber pads are therefore not required to energize each individual data line or gate line for gross testing. Moreover, after testing is completed, test thin film transistors need not be cut or otherwise mechanically disconnected. Test thin film transistors may be organized for tape automated bonding (TAB) LCD panels or for chip on glass (COG) LCD panels. Associated methods are also provided.Type: GrantFiled: October 24, 1997Date of Patent: July 8, 2003Assignee: Samsung Electronics Co., Ltd.Inventor: Seog-chae Lee
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Publication number: 20030107039Abstract: A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line.Type: ApplicationFiled: May 7, 2002Publication date: June 12, 2003Inventors: Cheol-Soo Jung, Young-Sun Kim, Ho-Joon Lee, Yeong-Hwan Cho, Hyeon-Hwan Kim, Bung-Hyuk Min, Woon-Yong Park, Il-Gon Kim, Jang-Soo Kim, Jin-Oh Kwag, Seog-Chae Lee
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Publication number: 20020149020Abstract: A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line.Type: ApplicationFiled: June 17, 2002Publication date: October 17, 2002Inventors: Cheol-Soo Jung, Young-Sun Kim, Ho-Joon Lee, Yeong-Hwan Cho, Hyeon-Hwan Kim, Bung-Hyuk Min, Woon-Yong Park, Il-Gon Kim, Jang-Soo Kim, Jin-Oh Kwag, Seog-Chae Lee
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Patent number: 6441401Abstract: A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line.Type: GrantFiled: March 17, 2000Date of Patent: August 27, 2002Assignee: Samsung Electronics Co., Ltd.Inventors: Cheol-Soo Jung, Young-Sun Kim, Ho-Joon Lee, Yeong-Hwan Cho, Hyeon-Hwan Kim, Bung-Hyuk Min, Woon-Yong Park, Il-Gon Kim, Jang-Soo Kim, Jin-Oh Kwag, Seog-Chae Lee