Patents by Inventor Seoijin Park

Seoijin Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabrication and structure for multi-junction solar cell formed upon separable substrate
    Patent number: 8330036
    Abstract: A method of fabricating a multi-junction solar cell on a separable substrate, and structure formed thereby are provided. The method comprises establishing a substrate having a semiconductive composition and forming a sacrificial layer upon the substrate. A solar cell portion is formed upon the sacrificial layer, such that the solar cell portion includes a plurality of multi junction layers. A stabilizing cell layer of semiconductor material is then formed on the solar cell portion, with the stabilizing cell layer having a predetermined thickness greater than a thickness of any individual one of the III-V multi junction layers. Etching is thereafter carried out to remove the sacrificial layer for releasing the solar cell portion from the substrate.
    Type: Grant
    Filed: August 31, 2009
    Date of Patent: December 11, 2012
    Inventor: Seoijin Park
  • Dense-plasma etching of InP-based materials using chlorine and nitrogen
    Publication number: 20010025826
    Abstract: A semiconductor dry etching process that provides deep, smooth, and vertical etching of InP-based materials using a chlorinated plasma with the addition of nitrogen (N2) gas. Etching of InP-based semiconductors using an appropriate Cl2/N2 mixture without any additional gases provides improved surface morphology, anisotropy and etch rates.
    Type: Application
    Filed: February 28, 2001
    Publication date: October 4, 2001
    Inventors: Thomas E. Pierson, Christopher T. Youtsey, Seng-Tiong Ho, Seoijin Park