Patents by Inventor Seojoo Kim

Seojoo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230299099
    Abstract: An image sensor is provided. The image sensor includes: a first photodiode (PD) provided in a first area; a second PD provided in a second area, wherein the second area is smaller than and adjacent to the first area; a first floating diffusion region that is provided in the first area and connected to the first PD via a first transfer transistor; a second floating diffusion region that is connected to a power source via a first reset transistor and the first floating diffusion region via a second reset transistor; a third floating diffusion region that is provided in the second area, and is connected to the second PD via the second transfer transistor and the second floating diffusion region via a first switch; and a capacitor connected between the third floating diffusion region and the power source.
    Type: Application
    Filed: November 21, 2022
    Publication date: September 21, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jungwook LIM, Seojoo KIM, Soeun PARK, Sunghyuck CHO
  • Publication number: 20230299116
    Abstract: Disclosed is an image sensor including a semiconductor substrate including first and second pixel regions, first and second photoelectric conversion elements on the first and second pixel regions, a pixel isolation structure between the first and second photoelectric conversion elements, a first floating diffusion region on the first pixel region, a first transfer gate electrode between the first photoelectric conversion element and the first floating diffusion region, a second floating diffusion region on the second pixel region, a second transfer gate electrode between the second photoelectric conversion element and the second floating diffusion region, a first charge storage region on the first pixel region, a second charge storage region on the second pixel region, a first switching element between the first floating diffusion region and the first charge storage region, and a second switching element between the second floating diffusion region and the second charge storage region.
    Type: Application
    Filed: March 17, 2023
    Publication date: September 21, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jungwook Lim, Joongseok Park, Dongsuk Yoo, Seojoo Kim, Soeun Park, Sunghyuck Cho
  • Patent number: 10929039
    Abstract: Disclosed is a storage method of DNA digital data, including: encoding a plurality of bit data to a plurality of base sequences including at least one degenerate base; and synthesizing at least two types of bases constituting the at least one degenerate base on a substrate based on a mixing ratio.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: February 23, 2021
    Assignees: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Sunghoon Kwon, Wook Park, Yeongjae Choi, Taehoon Ryu, Suk-Heung Song, Hyeli Kim, Seojoo Kim
  • Publication number: 20190317684
    Abstract: Disclosed is a storage method of DNA digital data, including: encoding a plurality of bit data to a plurality of base sequences including at least one degenerate base; and synthesizing at least two types of bases constituting the at least one degenerate base on a substrate based on a mixing ratio.
    Type: Application
    Filed: September 21, 2018
    Publication date: October 17, 2019
    Inventors: Sunghoon Kwon, Wook Park, Yeongjae Choi, Taehoon Ryu, Suk-Heung Song, Hyeli Kim, Seojoo Kim