Abstract: A single-chip radio structure with a piezoelectric crystal device integrated on a monolithic integrated circuit and a method of fabricating the same. A thin or thick piezoelectric crystal wafer is bonded on a silicon substrate and adjusted in thickness by mechanical grinding and polishing processes. Then, a surface acoustic wave resonator and other passive devices such as a filter, inductor, etc. are formed on the piezoelectric crystal wafer by a standard lithography process. Therefore, a high-precision oscillator and various passive devices can be included in a monolithic integrated circuit to implement a single-chip radio structure. This single-chip radio structure has the effect of reducing the volume and weight of the entire receiver while maintaining excellent performances provided by passive devices on a crystal substrate, such as frequency stability, frequency linearity and low power consumption, etc., as they are.