Abstract: A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.

Abstract: A balance filter packaging chip having a balun mounted therein and a manufacturing method thereof are provided. The balance filter packaging chip includes a device substrate; a balance filter mounted on the device substrate; a bonding layer stacked on a certain area of the device substrate; a packaging substrate having a cavity formed over the balance filter, and combined with the device substrate by the bonding layer; a balun located on a certain area over the packaging substrate; and an insulator layer for passivating the balun. Accordingly, the present invention can reduce an element size and simplify a manufacturing process.

Abstract: An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.

Abstract: A micro electro-mechanical system (MEMS) device package and a method of manufacturing the same are provided.

Abstract: A MEMS device package and a method of manufacturing the same. The MEMS device package includes a device substrate having a surface on which a MEMS active device is formed, and multiple sealing pads arranged around the MEMS active device so that the sealing pads provide electric paths for the MEMS active device. In addition, the MEMS device package may include a cap substrate bonded to the device substrate through the multiple sealing pads, the cap substrate including a trench, within which the MEMS active device is positioned, and via holes. One or more outer electrode pads may be formed on one surface of the cap substrate to be electrically connected with the multiple sealing pads through the via holes. Because there are several bonding and sealing areas between the device substrate and the cap substrate, the sealing intensity is strengthened.

Abstract: A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.

Abstract: An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.

Abstract: A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.

Abstract: An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.

Abstract: A MEMS switch includes a lower substrate having a signal line on an upper surface of the lower substrate; an upper substrate, having a cavity therein, disposed apart from the upper surface of the lower substrate by a distance, and having a membrane layer on a lower surface of the upper substrate; a bimetal layer formed in the cavity of the upper substrate on the membrane layer; a heating layer formed on a lower surface of the membrane layer; and a contact member formed on a lower surface of the heating layer. The contact member can come into contact with or separate from the signal line. A method for manufacturing the MEMS switch includes preparing the upper and lower substrates and combining them so that a surface having the signal line faces a surface having the contact member and the upper and lower substrates are disposed apart by a distance.

Abstract: A packaging chip having inductors therein is provided. The packaging chip includes a substrate for mounting a circuit element therein, at least one port formed on a surface of the substrate, a sealing portion electrically connected on the substrate to the circuit element and the at least one port, respectively, and a packaging substrate bonded to the substrate through the sealing portion and packaging the circuit element. In this case, the sealing portion has a certain magnitude of inductance since it is formed of a conductive material, thereby serving as an inductor. Accordingly, the packaging chip having an inductor therein can be implemented in a small size.

Abstract: A micro electromechanical system (MEMS) device package and a method of manufacturing the same are provided. The MEMS device package includes: a device substrate with a MEMS active device being formed on the top surface thereof; internal electrode pads, each of which is positioned on the opposite side of the MEMS active device and electrically connected to the MEMS active device; sealing pads positioned outside of the internal electrode pads; a closure substrate joined to the device substrate through the sealing pads, the closure substrate having via holes formed at the areas where the internal electrode pads are positioned; and external electrode pads formed on the top surface of the closure substrate in such a way that the external electrode pads are electrically connected to the internal electrode pads through the via holes.

Abstract: A filter formed of film bulk acoustic resonators has a topology that enables a trimming inductor to be fabricated on the same substrate as the resonator arrays. The entire filter can be fabricated on a single chip, utilizing only integrated circuit processes. In an exemplary embodiment, a pair of shunt resonators each have one electrode connected to series-connected resonators. The other electrodes of the two shunt resonators are connected in common to one another. The trimming inductor is connected between the common electrode and ground potential. A third shunt resonator is connected between the series-connected resonators and ground potential.

Abstract: A band pass filter for improving filtering, realizing high integration, and reducing manufacturing costs, and a duplexer having the band pass filter. The band pass filter comprises a first resonant circuit in which n first resonators are connected in series, where n is a natural number greater than 1; a second resonator circuit which faces the first resonant circuit and has m second resonators connected in series, where m is a natural number greater than 1; and a third resonant circuit in which k third resonators are connected in parallel on branching lines linking the first and second resonant circuits, where k is a natural number greater than 1. By arranging the resonators of the respective resonant circuits in the bridge structure, the filtering characteristics can be improved, the number of inductors used to adjust the resonant frequency characteristics of the resonators can be reduced, high integration can be realized and manufacture cost can be reduced.

Abstract: A duplexer is provided. The duplexer includes a first band pass filter (BPF) coupled to a first signal port and a second signal port; and a second BPF coupled to the first signal port and a third signal port, each of the first BPF and the second BPF including a first resonance circuit which comprises a plurality of first resonators coupled in series; a second resonance circuit which comprises a plurality of second resonators coupled in series; and a third resonance circuit which comprises a plurality of third resonators coupled in parallel and formed in divided lines coupling the first and second resonance circuits.

Abstract: A vertical comb actuator radio frequency (RF) micro-electro-mechanical system (MEMS) switch. The RF MEMS switch includes a substrate; first and second signal lines spaced at a predetermined interval from each other and deposited on an upper surface of the substrate; an actuator positioned over the first and second signal lines when viewed from the upper surface of the substrate and spaced at a predetermined interval from the first and second signal lines; and a fixing portion positioned over the actuator when viewed from the upper surface of the substrate, wherein the fixing portion permits the actuator to come in contact with the first and second signal lines when a predetermined driving voltage is applied. Thus, it is possible to prevent the actuator from sticking to the substrate. In addition, the RF MEMS switch can be operated with a low voltage and insertion loss and power loss can be reduced.

Abstract: A balun capable of a reduced whole size. The balun includes an input line receiving an unbalanced signal, an output line receiving the unbalanced signal from the input line and outputting a balanced signal, and a ground part. The input and output lines are formed on a layer, and the ground part is formed on a different layer from the layer. The ground part includes an opening and is electrically connected to the input line, and a portion of the ground part is removed to form the opening so that a potential difference occurs between first and second output lines. Thus, although a length of the output line is less than ¼ of an input wavelength ?, a difference between phases of first and second output signals can be about 180°. As a result, the whole size of the balun can be reduced.

Abstract: An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material.

Abstract: A balance filter packaging chip having a balun mounted therein and a manufacturing method thereof are provided. The balance filter packaging chip includes a device substrate; a balance filter mounted on the device substrate; a bonding layer stacked on a certain area of the device substrate; a packaging substrate having a cavity formed over the balance filter, and combined with the device substrate by the bonding layer; a balun located on a certain area over the packaging substrate; and an insulator layer for passivating the balun. Accordingly, the present invention can reduce an element size and simplify a manufacturing process.

Abstract: A balance filter packaging chip having a balun mounted therein and a manufacturing method thereof are provided. The balance filter packaging chip includes a device substrate; a balance filter mounted on the device substrate; a bonding layer stacked on a certain area of the device substrate; a packaging substrate having a cavity formed over the balance filter, and combined with the device substrate by the bonding layer; a balun located on a certain area over the packaging substrate; and an insulator layer for passivating the balun. Accordingly, the present invention can reduce an element size and simplify a manufacturing process.