Abstract: The present disclosure relates to a new soybean variety containing epicatechin with high content and having antioxidant and antiaging activities, a method for producing the new soybean variety, a composition containing an extract of the new soybean variety as an active ingredient, a functional health food containing the new soybean variety, a method for producing epicatechin from the new soybean variety, and a method for producing a commodity plant product. The seed of the new soybean (Glycine max) variety according to an aspect of the present disclosure contains epicatechin with a high content of 2 wt % or more based on the total weight of an 80 wt % ethanol aqueous solution of seed extract, exhibits 2 times or higher antioxidant activity confirmed by DPPH radical-scavenging ability than the mother plant IT109098, and exhibits superior collagenase (matrix metalloproteinase-1, MMP-1) expression inhibition as compared to EGCG, which is known as an antiaging substance.

Abstract: The present invention relates to managing a UNITY file in a mobile platform in order to forestall a UNITY library executable in a mobile platform from being analyzed by reverse engineering and decompiling and provides an apparatus for managing a UNITY file in a mobile platform comprising a file extracting section that extracts a UNITY library file from a UNITY application; an encrypting section that encrypts a programming library file in the UNITY library file thus extracted and creates an encrypted programming library file; a file creating section that creates a decrypting library to decrypt the encrypted programming library file and creates a secured UNITY application using the decrypting library and the encrypted programming library file; and a file executing section that, upon request to execute the secured UNITY application, executes the secured application by decrypting the encrypted programming library file using the decrypting library.

Abstract: Provided are a semiconductor chip, a semiconductor package and a fabricating method thereof, which can reduce or prevent cracks from being generated or propagated due to an external pressure. The semiconductor chip includes a semiconductor substrate including a first region and a second region, a plurality of interlayer insulation layers formed on the semiconductor substrate, a first crack stopper formed in the plurality of interlayer insulation layers of the first region, an interconnector formed in the plurality of interlayer insulation layers of the second region, a pad wire formed on the plurality of interlayer insulation layers, electrically connected to the interconnector in the second region and extending to the first region, a bonding pad on the plurality of interlayer insulation layers of the first region, electrically connected to the pad wire, and a protection layer covering the pad wire and exposing the bonding pad.

Abstract: The present invention relates to managing a Unity file in a mobile platform in order to forestall a Unity library executable in a mobile platform from being analyzed by reverse engineering and decompiling and provides an apparatus for managing a Unity file in a mobile platform comprising a file extracting section that extracts a Unity library file from a Unity application; an encrypting section that encrypts a programming library file in the Unity library file thus extracted and creates an encrypted programming library file; a file creating section that creates a decrypting library to decrypt the encrypted programming library file and creates a secured Unity application using the decrypting library and the encrypted programming library file; and a file executing section that, upon request to execute the secured Unity application, executes the secured application by decrypting the encrypted programming library file using the decrypting library.

Abstract: Image sensors are provided. The image sensors can include a photodiode in a substrate configured to generate signal charges based on incident light, a charge storage unit positioned at a side of the photodiode configured to temporarily store the signal charges generated by the photodiode, and a shield metal on the charge storage unit and on the substrate.

Abstract: Provided are a semiconductor chip, a semiconductor package and a fabricating method thereof, which can reduce or prevent cracks from being generated or propagated due to an external pressure. The semiconductor chip includes a semiconductor substrate including a first region and a second region, a plurality of interlayer insulation layers formed on the semiconductor substrate, a first crack stopper formed in the plurality of interlayer insulation layers of the first region, an interconnector formed in the plurality of interlayer insulation layers of the second region, a pad wire formed on the plurality of interlayer insulation layers, electrically connected to the interconnector in the second region and extending to the first region, a bonding pad on the plurality of interlayer insulation layers of the first region, electrically connected to the pad wire, and a protection layer covering the pad wire and exposing the bonding pad.

Abstract: A method of forming a channel layer of an electric device according to an embodiment is provided. First, a conductive substrate including an insulating layer on the substrate is provided. The conductive substrate and a metal to be plated are used as respective electrodes to carry out electroplating within an electrolyte solution. In this case, electrons provided by a tunneling current passing through the insulating layer from the conductive substrate are bonded with ions of the metal within the electrolyte solution to form a metal channel layer on the insulating layer.

Abstract: A method of forming a channel layer of an electric device according to an embodiment is provided. First, a conductive substrate including an insulating layer on the substrate is provided. The conductive substrate and a metal to be plated are used as respective electrodes to carry out electroplating within an electrolyte solution. In this case, electrons provided by a tunneling current passing through the insulating layer from the conductive substrate are bonded with ions of the metal within the electrolyte solution to form a metal channel layer on the insulating layer.

Abstract: A method for operating image sensors is provided. The method for operating image sensors includes maintaining a charge transmission unit which transfers charges generated in a photoelectric conversion unit by responding to incident light to a charge detection unit in an inactive state; and toggling the charge transmission unit between an active state and an inactive state while a reset unit resets the charge detection unit, wherein the toggling is repeated multiple times while a reset unit which resets the charge detection unit is maintained in active state.

Abstract: A shared-pixel-type image sensor includes a semiconductor substrate, four photoelectric conversion elements disposed adjacent to one another in one direction on the semiconductor substrate, two first transmission elements transmitting charges accumulated in two adjacent ones of the photoelectric conversion elements to a first floating diffusion region, respectively, two second transmission elements transmitting charges accumulated in the other two adjacent photoelectric conversion elements to a second floating diffusion region electrically coupled with the first floating diffusion region, respectively, MOS capacitors that are electrically coupled with the first or second floating diffusion region, a reset element resetting the charges of the first and second floating diffusion regions to a reference value, and a drive element and an select element outputting the charges of the first or second floating diffusion region.

Abstract: According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.

Abstract: An image sensor includes photoelectric conversion elements formed adjacent to each other on a substrate. Two transmission elements transmit charge accumulated in two adjacent photoelectric conversion elements to a first floating diffusion region, and another two transmission elements transmit charge accumulated in the other two photoelectric conversion elements to a second floating diffusion region. The first floating diffusion region is electrically connected to the second floating diffusion region. A plurality of readout elements read out the charge transmitted to the first and the second floating diffusion regions. The image sensor also includes a dummy gate group including at least one dummy gate arrayed substantially parallel to a readout gate of the plurality of readout elements.

Abstract: An image sensor can include a plurality of photoelectric conversion elements arranged in a matrix. A plurality of floating diffusion regions can be shared by respective corresponding pairs of adjacent photoelectric conversion elements. A plurality of charge-transmission transistors can respectively correspond to the photoelectric conversion elements, where each of the charge-transmission transistors are connected between a corresponding one of the plurality of photoelectric conversion elements and a corresponding one of the plurality of floating diffusion regions. A plurality of charge-transmission lines can be commonly connected to gates of respective corresponding pairs of adjacent rows of charge-transmission transistors, where each of the respective corresponding pairs of adjacent rows of charge-transmission transistors can be connected to respective ones of the plurality of photoelectric conversion elements in different adjacent rows of floating diffusion regions.

Abstract: Provided are a CMOS image sensor and a method of manufacturing the same. The CMOS image sensor includes a semiconductor substrate having photodiodes and transistors. An interlayer insulating layer is formed on the resultant structure having the photodiodes and transistors, and light blocking patterns are formed on the interlayer insulating layer to surround the peripheries of the photodiodes.

Abstract: A semiconductor device having a unit capable of temporarily storing electrical signals, may include an electrical signal generation unit, a first signal transmission unit electrically connected to the electrical signal generation unit, a first signal storage unit electrically connected to the first signal transmission unit, a second signal transmission unit electrically connected to the first signal storage unit, a second signal storage unit electrically connected to the second signal transmission unit, a reset unit electrically connected to the second signal storage unit, an amplification unit electrically connected to the second signal storage unit, a selection unit electrically connected to the amplification unit, and an output unit electrically connected to the selection unit, for stable signal processing.

Abstract: In one aspect, an image sensor is provided which includes an array of unit active pixels. Each of the unit active pixels comprises a first active area including a plurality of photoelectric conversion regions, and a second active area separated from the first active area. The first active areas are arranged in rows and columns so as to define row and column extending spacings there between, and the second active areas are located at respective intersections of the row and column extending spacings defined between the first active areas.

Abstract: An image sensor comprising an array of photoelectric conversion elements in a substrate, the photoelectric conversion elements being arranged in rows and columns extending in a first direction and a second direction respectively, a plurality of first junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common row, and a plurality of second junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common column, and a plurality of dielectric isolation regions in the substrate, that each isolate corner portions of neighboring photoelectric conversion elements.

Abstract: An image sensor includes photoelectric conversion elements formed adjacent to each other on a substrate. Two transmission elements transmit charge accumulated in two adjacent photoelectric conversion elements to a first floating diffusion region, and another two transmission elements transmit charge accumulated in the other two photoelectric conversion elements to a second floating diffusion region. The first floating diffusion region is electrically connected to the second floating diffusion region. A plurality of readout elements read out the charge transmitted to the first and the second floating diffusion regions. The image sensor also includes a dummy gate group including at least one dummy gate arrayed substantially parallel to a readout gate of the plurality of readout elements.

Abstract: Provided are a doping mask and methods of manufacturing a charge transfer image device and a microelectronic device using the same. The method includes forming a photoresist film on an entire surface of a substrate or sub-substrate having a peripheral circuit region and a pixel region, removing the photoresist film on an upper surface of the substrate intended for the peripheral circuit region and patterning the photoresist film on an upper surface of the substrate intended for the pixel region to form a photoresist pattern having an array of openings with a predetermined pitch, implanting ions at the same concentration level into the entire surface of the substrate using the photoresist pattern as a doping mask, and diffusing the implanted ions by annealing. The pitch is determined so that ions implanted through each opening diffuse toward those implanted through an adjacent one to form wells.

Abstract: A method for operating image sensors is provided. The method for operating image sensors includes maintaining a charge transmission unit which transfers charges generated in a photoelectric conversion unit by responding to incident light to a charge detection unit in an inactive state; and toggling the charge transmission unit between an active state and an inactive state while a reset unit resets the charge detection unit, wherein the toggling is repeated multiple times while a reset unit which resets the charge detection unit is maintained in active state.