Patents by Inventor Seok-Hun Hyun
Seok-Hun Hyun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230317138Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: ApplicationFiled: June 7, 2023Publication date: October 5, 2023Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
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Patent number: 11749337Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: GrantFiled: June 16, 2022Date of Patent: September 5, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
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Patent number: 11749338Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: GrantFiled: July 29, 2022Date of Patent: September 5, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
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Publication number: 20230274776Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: ApplicationFiled: May 9, 2023Publication date: August 31, 2023Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
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Publication number: 20220383931Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: ApplicationFiled: July 29, 2022Publication date: December 1, 2022Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
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Publication number: 20220310151Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: ApplicationFiled: June 16, 2022Publication date: September 29, 2022Inventors: Dae-Sik MOON, Gil-Hoon CHA, Ki-Seonk OH, Chang-Kyo LEE, Yeon-Kyu CHOI, Jung-Hwan CHOI, Kyung-Soo HA, Seok-Hun HYUN
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Patent number: 11423971Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: GrantFiled: December 29, 2021Date of Patent: August 23, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
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Patent number: 11393522Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: GrantFiled: January 14, 2021Date of Patent: July 19, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
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Publication number: 20220122648Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: ApplicationFiled: December 29, 2021Publication date: April 21, 2022Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
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Publication number: 20220093144Abstract: A method of operating memory devices disposed in different ranks of a multi-rank memory device and sharing a signal line includes receiving, in all of the memory devices included in the multi-rank memory device, on-die termination (ODT) state information of the signal line. The method further includes storing, in each of the memory devices of the multi-rank memory device, the ODT state information of the signal line in a mode register. The method further includes generating, in each of the memory devices of the multi-rank memory device, a control signal based on the ODT state information of the signal line stored in the mode register. The method further includes changing, in each of the memory devices of the multi-rank memory device, an ODT setting of the signal line in response to the control signal.Type: ApplicationFiled: December 1, 2021Publication date: March 24, 2022Inventors: DAE-SIK MOON, KYUNG-SOO HA, YOUNG-SOO SOHN, KI-SEOK OH, CHANG-KYO LEE, JIN-HOON JANG, YEON-KYU CHOI, SEOK-HUN HYUN
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Patent number: 11244926Abstract: A semiconductor package includes a first layer including a first semiconductor chip and a first through via, a first redistribution layer disposed on a surface of the first layer, and including a first-first wiring and a second-first wiring, and a second layer including a second semiconductor chip, and stacked on the first layer. The first semiconductor chip includes a first-first buffer, and the first-first buffer is electrically connected between the first-first wiring and the second-first wiring.Type: GrantFiled: August 20, 2018Date of Patent: February 8, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Hoon Son, Jung-Hwan Choi, Seok-Hun Hyun
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Patent number: 11211102Abstract: A method of operating memory devices disposed in different ranks of a multi-rank memory device and sharing a signal line includes receiving, in all of the memory devices included in the multi-rank memory device, on-die termination (ODT) state information of the signal line. The method further includes storing, in each of the memory devices of the multi-rank memory device, the ODT state information of the signal line in a mode register. The method further includes generating, in each of the memory devices of the multi-rank memory device, a control signal based on the ODT state information of the signal line stored in the mode register. The method further includes changing, in each of the memory devices of the multi-rank memory device, an ODT setting of the signal line in response to the control signal.Type: GrantFiled: November 25, 2020Date of Patent: December 28, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae-Sik Moon, Kyung-Soo Ha, Young-Soo Sohn, Ki-Seok Oh, Chang-Kyo Lee, Jin-Hoon Jang, Yeon-Kyu Choi, Seok-Hun Hyun
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Publication number: 20210166749Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: ApplicationFiled: January 14, 2021Publication date: June 3, 2021Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
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Publication number: 20210082479Abstract: A method of operating memory devices disposed in different ranks of a multi-rank memory device and sharing a signal line includes receiving, in all of the memory devices included in the multi-rank memory device, on-die termination (ODT) state information of the signal line. The method further includes storing, in each of the memory devices of the multi-rank memory device, the ODT state information of the signal line in a mode register. The method further includes generating, in each of the memory devices of the multi-rank memory device, a control signal based on the ODT state information of the signal line stored in the mode register. The method further includes changing, in each of the memory devices of the multi-rank memory device, an ODT setting of the signal line in response to the control signal.Type: ApplicationFiled: November 25, 2020Publication date: March 18, 2021Inventors: DAE-SIK MOON, KYUNG-SOO HA, YOUNG-SOO SOHN, KI-SEOK OH, CHANG-KYO LEE, JIN-HOON JANG, YEON-KYU CHOI, SEOK-HUN HYUN
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Patent number: 10923175Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: GrantFiled: December 21, 2018Date of Patent: February 16, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
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Patent number: 10885950Abstract: A method of operating memory devices disposed in different ranks of a multi-rank memory device and sharing a signal line includes receiving, in all of the memory devices included in the multi-rank memory device, on-die termination (ODT) state information of the signal line. The method further includes storing, in each of the memory devices of the multi-rank memory device, the ODT state information of the signal line in a mode register. The method further includes generating, in each of the memory devices of the multi-rank memory device, a control signal based on the ODT state information of the signal line stored in the mode register. The method further includes changing, in each of the memory devices of the multi-rank memory device, an ODT setting of the signal line in response to the control signal.Type: GrantFiled: March 25, 2019Date of Patent: January 5, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae-Sik Moon, Kyung-Soo Ha, Young-Soo Sohn, Ki-Seok Oh, Chang-Kyo Lee, Jin-Hoon Jang, Yeon-Kyu Choi, Seok-Hun Hyun
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Patent number: 10763242Abstract: A semiconductor package includes a first layer of one or more first semiconductor chips each having a first surface at which one or more first pads are exposed, a second layer of one or more second semiconductor chips disposed over the first layer and each having a second surface at which one or more second pads are exposed, and a first redistribution layer between the first layer and the second layer and electrically connected to the one or more first pads. The first layer may include one or more first TPVs extending through a substrate (panel) of the first layer and electrically connected to the first redistribution layer.Type: GrantFiled: June 1, 2018Date of Patent: September 1, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Hoon Son, Jung-Hwan Choi, Seok-Hun Hyun
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Patent number: 10643675Abstract: A memory device determines an operation mode based on an external voltage. The memory device includes a cell array including a plurality of memory cells; and a mode selector that detects a level of at least one voltage signal externally provided and selects any one of a plurality of operation modes corresponding to a plurality of standards according to a result of detecting the level of the at least one voltage signal. The memory device further includes a mode controller that, in response to a mode selecting signal from the mode selector, outputs setting information for setting the memory device to communicate with a memory controller via an interface according to a selected standard from among the plurality of standards; and a calibrating circuit that generates a control code for controlling circuit blocks in the memory device according to the setting information.Type: GrantFiled: August 14, 2018Date of Patent: May 5, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-Seok Heo, Joung-Wook Moon, Ki-Ho Kim, Jin-Hyeok Baek, Seok-Hun Hyun
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Patent number: 10566968Abstract: An output driver includes a pre-driver receiving a driver control code to generate a pull-up control signal or a pull-down control signal in response to data while a read operation is performed, an on-die termination controller receiving a first on-die termination control code to generate a first on-die termination control signal in response to an on-die termination enable signal while a write operation is performed, and a main driver including a pull-up n-channel metal-oxide-semiconductor (NMOS) driver generating high-level output data in response to the pull-up control signal while the read operation is performed, and terminating high-level input data with a first high voltage and terminating low-level input data with a first low voltage in response to the first on-die termination control signal while the write operation is performed, and a pull-down NMOS driver generating low-level output data in response to the pull-down control signal while the read operation is performed.Type: GrantFiled: March 20, 2019Date of Patent: February 18, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young Hoon Son, Jung Hwan Choi, Seok Hun Hyun
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Publication number: 20200044645Abstract: An output driver includes a pre-driver receiving a driver control code to generate a pull-up control signal or a pull-down control signal in response to data while a read operation is performed, an on-die termination controller receiving a first on-die termination control code to generate a first on-die termination control signal in response to an on-die termination enable signal while a write operation is performed, and a main driver including a pull-up n-channel metal-oxide-semiconductor (NMOS) driver generating high-level output data in response to the pull-up control signal while the read operation is performed, and terminating high-level input data with a first high voltage and terminating low-level input data with a first low voltage in response to the first on-die termination control signal while the write operation is performed, and a pull-down NMOS driver generating low-level output data in response to the pull-down control signal while the read operation is performed.Type: ApplicationFiled: March 20, 2019Publication date: February 6, 2020Inventors: YOUNG HOON SON, JUNG HWAN CHOI, SEOK HUN HYUN