Abstract: Provided are a pressure sensor device and a method of manufacturing the same. The pressure sensor device includes a housing including an air inlet and a fluid inlet provided in different directions, a substrate provided in an inner space of the housing and including a through-hole through which the air passes, and a pressure sensor chip mounted on the substrate to cover the through-hole in such a manner that a pressure of a fluid flowing in from the fluid inlet is applied to a top surface thereof and a bottom surface thereof is exposed to the air through the through-hole, in order to measure the pressure of the fluid relative to a pressure of the air, wherein the inner space is divided into an upper region and a lower region with respect to the substrate, and wherein the upper region is divided into a first inner region in which the pressure sensor chip is provided and a second inner region through which the air passes.

Abstract: Provided is a hot press formed product, which is prepared by means of hot press forming of a Zn—Al—Mg-based plated steel material comprising base iron and a Zn—Al—Mg-based plated layer, and a method for preparing the same, the hot press formed product comprising an oxide layer formed on the surface thereof, wherein the content ratio of Al to Mg (Al/Mg) in the oxide layer is 0.8 or more.

Abstract: Provided herein are approaches for dynamically modifying plasma volume in an ion source chamber by positioning an end plate and radio frequency (RF) antenna at a selected axial location. In one approach, an ion source includes a plasma chamber having a longitudinal axis extending between a first end wall and a second end wall, and an RF antenna adjacent a plasma within the plasma chamber, wherein the RF antenna is configured to provide RF energy to the plasma. The ion source may further include an end plate disposed within the plasma chamber, adjacent the first end wall, the end plate actuated along the longitudinal axis between a first position and a second position to adjust a volume of the plasma. By providing an actuable end plate and RF antenna, plasma characteristics may be dynamically controlled to affect ion source characteristics, such as composition of ion species, including metastable neutrals.

Abstract: A power MOSFET includes an insulating layer, a first conductivity type doping layer situated on a bottom of the insulating layer, a second conductivity type body situated on a bottom of the first conductivity type doping layer, a gate electrode adjacent to the bottom of the insulating layer and covered with an insulating film in other regions and projected to penetrate the second conductivity type body, and a source electrode including a first region situated on a top of the insulating layer and a second region in contact with the first conductivity type doping layer by penetrating the insulating layer.

Abstract: A membrane welding device guide system according to the present invention comprises: an anchor strip arranged on an insulation wall which configures an insulation system of a liquefied gas storage tank; a stud integrally formed with the anchor strip, the center of the stud deviating from a welding line of the anchor strip; and a guide rail which is coupled to the stud to form a path of an automatic membrane welding device for welding a membrane to be stacked on the insulation wall. Therefore, the present invention allows membrane welding to be easily performed and allows a membrane welding device to be stably guided.

Abstract: Disclosed are a latch circuit receiving a negative output of a next stage latch circuit as a feedback input, a double data rate (DDR) ring counter based on the latch circuit to perform DDR counting of pulse periods and reduce the number of toggles, a hybrid counting device counting lower-bit portion by using the latch-based DDR ring counter and upper-bit portion by using a binary counter, and an analog-to-digital converting device and a CMOS image sensor employing the hybrid counting device. A double data rate ring counter may include a plurality of latches coupled in a ring type. The plurality of latches may include positive-edge-triggered latches and negative-edge-triggered latches arranged alternately. A current stage latch receives an output of a previous latch stage to shift to a next latch stage according to a counter clock, receives an output of the next latch stage to check a data shift to the next latch stage, and falls to a low level if the data shift is checked.

Abstract: A power amplifier includes an amplifying circuit configured to amplify an input signal and comprising transistors, which may be disposed in parallel with one another and divided into a first group of transistors and a second group of transistors. The power amplifier also includes a bias circuit configured to supply bias power to one of the transistors of the first group and the transistors of the second group.

Abstract: A count circuit includes a count block suitable for generating count code signals for a predetermined count period including a first period and a second period; and a storage block suitable for storing first bit signals among a plurality of bit signals included in the count code signals, for the first period, and storing remaining bit signals among the plurality of bit signals for the second period.

Abstract: A secondary battery protection circuit includes a first terminal connected to a power supply path between a secondary battery and a MOS transistor, a second terminal connected to the power supply path between a load and the MOS transistor, a third terminal connected to a gate of the MOS transistor, a fourth terminal connected to a back gate of the MOS transistor, a control circuit that outputs a switch control signal based on a detected abnormal state of the secondary battery, and a switch control circuit including a first switch for connecting the fourth terminal with the first terminal and a second switch for connecting the fourth terminal with the second terminal. At least one of the resistance between the fourth terminal and the first terminal and the resistance between the fourth terminal and the second terminal is greater than the on resistance value of the MOS transistor.

Abstract: An item recommendation method and apparatus are provided. The item recommendation method and apparatus may recognize items preferred before a user uses items, based on items rated by the user, and may recommend an item to the user based on preferences for the recognized items.

Abstract: According to an aspect of the present invention, there is provided a battery protection circuit module including a first positive terminal and a first negative terminal electrically connected to electrode terminals of a battery bare cell, a second positive terminal and a second negative terminal electrically connected to a charger or an electronic device, a first protection circuit unit including a first single field-effect transistor connected between at least one of the first positive and negative terminals and at least one of the second positive and negative terminals, and a first protection integrated circuit (P-IC) for controlling the first single field-effect transistor, and a second protection circuit unit including a second single field-effect transistor connected between at least one of the first positive and negative terminals and at least one of the second positive and negative terminals, and a second P-IC for controlling the second single field-effect transistor.

Abstract: An exemplary embodiment of the present invention relates to a conductive structure body that comprises a darkening pattern layer having AlOxNy, and a method for manufacturing the same. The conductive structure body according to the exemplary embodiment of the present invention may prevent reflection by a conductive pattern layer without affecting conductivity of the conductive pattern layer, and improve a concealing property of the conductive pattern layer by improving absorbance. Accordingly, a display panel having improved visibility may be developed by using the conductive structure body according to the exemplary embodiment of the present invention.

Abstract: A method of analyzing power noise in a semiconductor device includes; generating modified current information by modifying present current information based on a previous analysis result, updating a current vector based on the modified current information, and generating a present analysis result by calculating a voltage vector from the updated current vector.

Abstract: According to an aspect of the present invention, there is provided a battery protection circuit module including a first positive terminal and a first negative terminal electrically connected to electrode terminals of a battery bare cell, a second positive terminal and a second negative terminal electrically connected to a charger or an electronic device, a single field-effect transistor including a drain terminal, a source terminal, a gate terminal, and a well terminal, wherein the drain terminal is electrically connected to the first negative terminal and the source terminal is electrically connected to the second negative terminal, and a protection integrated circuit (P-IC) for controlling charging/discharging of the battery bare cell by controlling the gate terminal to control whether to switch on the single field-effect transistor and controlling a bias voltage of the well terminal by using an internal switch.

Abstract: The present application relates to a touch screen and a method for preparing the same, and the touch screen according to the present application comprises a screen part and a non-screen part, in which the non-screen part comprises a router part, a flexible printed circuit board (FPCB) part, a first pad part connecting the screen part and the router part, a second pad part connecting the router part and the flexible printed circuit board part, and a decoration part, the screen part comprises a first conductive pattern, the router part, the first pad part, and the second pad part each comprise a second conductive pattern, and the decoration part comprises a third conductive pattern, and a darkened pattern or a color pattern provided on at least one surface of the third conductive pattern and provided in a region corresponding to the third conductive pattern.

Abstract: A group selection circuit includes an input block suitable for receiving a last column select signal of a previous column switch group and a last column select signal of a current column switch group; and a group selection block suitable for generating a group select signal that is activated from a first edge of the last column select signal of the previous column switch group to a first edge of the last column select signal of the current column switch group, in response to an output signal of the input block.

Abstract: This disclosure relates to salt forms of ceftolozane, processes for making these salt forms, and compositions comprising the same. Also disclosed are stabilized compositions of ceftolozane. Provided herein are salt forms of ceftolozane, processes for making these salt forms and compositions comprising the same. The salt forms provided herein include ceftolozane bromide, ceftolozane edisylate, ceftolozane mesylate, ceftolozane chloride, ceftolozane sulfate, ceftolozane maleate, ceftolozane phosphate, and ceftolozane ketoglutarate.

Abstract: The present invention provides a heat emitting body including a) a transparent substrate, and b) a conductive heat emitting pattern having a boundary line shape of figures forming a Voronoi diagram and an intersection point part of boundary lines, at which two or more boundary lines meet each other, forming a curve on at least one side of the transparent substrate, and a method for manufacturing the same.

Abstract: A radiographic apparatus may comprise: a radiation irradiating module configured to irradiate radiation to an object; and/or a processing module configured to automatically set a part of a region to which the radiation irradiating module is able to irradiate the radiation, to a region of interest, and further configured to determine at least one of a radiation irradiation position and a radiation irradiation zone of the radiation irradiating module based on the region of interest.